JP4121309B2 - ネガ型レジスト組成物 - Google Patents

ネガ型レジスト組成物 Download PDF

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Publication number
JP4121309B2
JP4121309B2 JP2002159047A JP2002159047A JP4121309B2 JP 4121309 B2 JP4121309 B2 JP 4121309B2 JP 2002159047 A JP2002159047 A JP 2002159047A JP 2002159047 A JP2002159047 A JP 2002159047A JP 4121309 B2 JP4121309 B2 JP 4121309B2
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Japan
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group
alkali
dendrimer
acid
resist composition
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JP2002159047A
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Japanese (ja)
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JP2004004249A5 (enExample
JP2004004249A (ja
Inventor
豊 阿出川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Priority to JP2002159047A priority Critical patent/JP4121309B2/ja
Publication of JP2004004249A publication Critical patent/JP2004004249A/ja
Publication of JP2004004249A5 publication Critical patent/JP2004004249A5/ja
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Publication of JP4121309B2 publication Critical patent/JP4121309B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Materials For Photolithography (AREA)
  • Polyethers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002159047A 2002-05-31 2002-05-31 ネガ型レジスト組成物 Expired - Fee Related JP4121309B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002159047A JP4121309B2 (ja) 2002-05-31 2002-05-31 ネガ型レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002159047A JP4121309B2 (ja) 2002-05-31 2002-05-31 ネガ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004004249A JP2004004249A (ja) 2004-01-08
JP2004004249A5 JP2004004249A5 (enExample) 2005-09-22
JP4121309B2 true JP4121309B2 (ja) 2008-07-23

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ID=30428980

Family Applications (1)

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JP2002159047A Expired - Fee Related JP4121309B2 (ja) 2002-05-31 2002-05-31 ネガ型レジスト組成物

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JP (1) JP4121309B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4770225B2 (ja) * 2004-03-25 2011-09-14 三菱瓦斯化学株式会社 レジスト組成物
WO2005093516A1 (ja) * 2004-03-25 2005-10-06 Mitsubishi Gas Chemical Company, Inc. レジスト組成物
JP4568667B2 (ja) * 2005-09-22 2010-10-27 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4858136B2 (ja) * 2006-12-06 2012-01-18 三菱瓦斯化学株式会社 感放射線性レジスト組成物
GB2490116B (en) * 2011-04-18 2016-09-21 Agilent Technologies Inc Balanced feature display in fluidic sample separation
JP5453358B2 (ja) * 2011-07-26 2014-03-26 富士フイルム株式会社 化学増幅型レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
JP5981739B2 (ja) * 2012-03-14 2016-08-31 旭化成株式会社 感光性樹脂組成物、及び硬化レリーフパターンの製造方法
JP5981737B2 (ja) * 2012-03-14 2016-08-31 旭化成株式会社 感光性樹脂組成物、及び硬化レリーフパターンの製造方法
JP6255210B2 (ja) * 2013-10-24 2017-12-27 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ レジスト下層膜形成組成物
CN107847670B (zh) * 2015-07-30 2020-09-04 泰尔茂株式会社 医疗用穿刺针和穿刺针的制造方法

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JP2004004249A (ja) 2004-01-08

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