JP4109135B2 - 難エッチング材のエッチング方法 - Google Patents
難エッチング材のエッチング方法 Download PDFInfo
- Publication number
- JP4109135B2 JP4109135B2 JP2003039795A JP2003039795A JP4109135B2 JP 4109135 B2 JP4109135 B2 JP 4109135B2 JP 2003039795 A JP2003039795 A JP 2003039795A JP 2003039795 A JP2003039795 A JP 2003039795A JP 4109135 B2 JP4109135 B2 JP 4109135B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- mask
- taper angle
- etched
- difficult
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003039795A JP4109135B2 (ja) | 2003-02-18 | 2003-02-18 | 難エッチング材のエッチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003039795A JP4109135B2 (ja) | 2003-02-18 | 2003-02-18 | 難エッチング材のエッチング方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002061328A Division JP3840123B2 (ja) | 2002-03-07 | 2002-03-07 | 難エッチング材のエッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003264171A JP2003264171A (ja) | 2003-09-19 |
JP2003264171A5 JP2003264171A5 (enrdf_load_stackoverflow) | 2005-08-25 |
JP4109135B2 true JP4109135B2 (ja) | 2008-07-02 |
Family
ID=29208456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003039795A Expired - Fee Related JP4109135B2 (ja) | 2003-02-18 | 2003-02-18 | 難エッチング材のエッチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4109135B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
JP4653426B2 (ja) | 2004-06-25 | 2011-03-16 | セイコーエプソン株式会社 | 半導体装置 |
JP4905969B2 (ja) * | 2007-03-08 | 2012-03-28 | 株式会社アルバック | 磁気デバイスの製造装置 |
JP2011091374A (ja) * | 2009-09-11 | 2011-05-06 | Samco Inc | サファイア基板のエッチング方法 |
US11119405B2 (en) | 2018-10-12 | 2021-09-14 | Applied Materials, Inc. | Techniques for forming angled structures |
-
2003
- 2003-02-18 JP JP2003039795A patent/JP4109135B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003264171A (ja) | 2003-09-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7368392B2 (en) | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode | |
US6942813B2 (en) | Method of etching magnetic and ferroelectric materials using a pulsed bias source | |
US6436838B1 (en) | Method of patterning lead zirconium titanate and barium strontium titanate | |
US7148114B2 (en) | Process for patterning high-k dielectric material | |
JP4562482B2 (ja) | 強誘電体キャパシタ構造およびその作製方法 | |
US11127599B2 (en) | Methods for etching a hardmask layer | |
JP2003282844A (ja) | ハードマスク及びCl2/N2/O2及びCl2/CHF3/O2の化学的性質を利用するIr及びPZTのプラズマエッチング | |
JP3840123B2 (ja) | 難エッチング材のエッチング方法 | |
JPH11126779A (ja) | 構造化方法 | |
US6835665B2 (en) | Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method | |
KR100629021B1 (ko) | 반도체기판에서의층구조화방법 | |
US6454956B1 (en) | Structuring method | |
JP4109135B2 (ja) | 難エッチング材のエッチング方法 | |
TW202449902A (zh) | 在電漿蝕刻導電材料期間的保護層形成 | |
JP3367600B2 (ja) | 誘電体薄膜素子の製造方法 | |
US20140264152A1 (en) | Chemistry and Compositions for Manufacturing Integrated Circuits | |
US20070082493A1 (en) | Method of manufacturing semiconductor device | |
KR100789894B1 (ko) | 난에칭재의 에칭방법 및 그것을 사용한 반도체제조방법 및장치 | |
CN109841512A (zh) | 半导体装置的制造方法 | |
JP2003224207A (ja) | 半導体装置およびその製造方法 | |
JP3246707B2 (ja) | 強誘電体膜のエッチング方法 | |
US7015049B2 (en) | Fence-free etching of iridium barrier having a steep taper angle | |
TW550701B (en) | Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method | |
JP3717383B2 (ja) | 強誘電体膜のエッチング方法 | |
KR100259351B1 (ko) | 다층막 건식각 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050208 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050208 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070627 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070710 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070906 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071002 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080401 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080403 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110411 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120411 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120411 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130411 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140411 Year of fee payment: 6 |
|
LAPS | Cancellation because of no payment of annual fees |