JP4080129B2 - 電力用半導体スイッチのゲート駆動回路 - Google Patents
電力用半導体スイッチのゲート駆動回路 Download PDFInfo
- Publication number
- JP4080129B2 JP4080129B2 JP2000058216A JP2000058216A JP4080129B2 JP 4080129 B2 JP4080129 B2 JP 4080129B2 JP 2000058216 A JP2000058216 A JP 2000058216A JP 2000058216 A JP2000058216 A JP 2000058216A JP 4080129 B2 JP4080129 B2 JP 4080129B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor switch
- switching element
- power semiconductor
- state
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 132
- 239000003990 capacitor Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 230000003071 parasitic effect Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011888 foil Substances 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BULVZWIRKLYCBC-UHFFFAOYSA-N phorate Chemical compound CCOP(=S)(OCC)SCSCC BULVZWIRKLYCBC-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0403—Modifications for accelerating switching in thyristor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000058216A JP4080129B2 (ja) | 1999-07-15 | 2000-03-03 | 電力用半導体スイッチのゲート駆動回路 |
| KR10-2000-0039920A KR100385789B1 (ko) | 1999-07-15 | 2000-07-12 | 전력용 반도체 스위치의 게이트 구동 회로 |
| US09/615,301 US6268754B1 (en) | 1999-07-15 | 2000-07-13 | Gate driving circuit for power semiconductor switch |
| EP00306006A EP1069683B1 (en) | 1999-07-15 | 2000-07-14 | Gate driving circuit for power semiconductor switch |
| DE60005758T DE60005758T2 (de) | 1999-07-15 | 2000-07-14 | Ansteuerschaltung für einen Leistungshalbleiterschalter |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-201163 | 1999-07-15 | ||
| JP20116399 | 1999-07-15 | ||
| JP2000058216A JP4080129B2 (ja) | 1999-07-15 | 2000-03-03 | 電力用半導体スイッチのゲート駆動回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001086733A JP2001086733A (ja) | 2001-03-30 |
| JP2001086733A5 JP2001086733A5 (enExample) | 2005-10-27 |
| JP4080129B2 true JP4080129B2 (ja) | 2008-04-23 |
Family
ID=26512612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000058216A Expired - Fee Related JP4080129B2 (ja) | 1999-07-15 | 2000-03-03 | 電力用半導体スイッチのゲート駆動回路 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6268754B1 (enExample) |
| EP (1) | EP1069683B1 (enExample) |
| JP (1) | JP4080129B2 (enExample) |
| KR (1) | KR100385789B1 (enExample) |
| DE (1) | DE60005758T2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4565773B2 (ja) * | 2001-05-31 | 2010-10-20 | 日本碍子株式会社 | 高電圧パルス発生回路 |
| JP4622856B2 (ja) * | 2003-06-05 | 2011-02-02 | トヨタ自動車株式会社 | モータ駆動装置、それを搭載した自動車および電圧変換の制御をコンピュータに実行させるためのプログラムを記録したコンピュータ読取り可能な記録媒体 |
| US7458504B2 (en) * | 2006-10-12 | 2008-12-02 | Huhtamaki Consumer Packaging, Inc. | Multi walled container and method |
| JP5258706B2 (ja) * | 2009-08-25 | 2013-08-07 | 東芝三菱電機産業システム株式会社 | 半導体電力変換装置のゲート駆動回路 |
| US8830647B2 (en) * | 2012-05-24 | 2014-09-09 | Mersen Usa Newburyport-Ma, Llc | Fault current limiter |
| EP2793397B1 (en) * | 2013-04-19 | 2016-01-13 | ABB Technology AG | Current switching device with IGCT |
| RU2605454C1 (ru) * | 2015-08-19 | 2016-12-20 | Акционерное общество "ТВЭЛ" (АО "ТВЭЛ") | Адаптивное устройство для управления силовым тиристором |
| KR102327683B1 (ko) * | 2019-12-26 | 2021-11-17 | 엘지전자 주식회사 | 전력 변환 장치 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4136382A (en) * | 1978-01-18 | 1979-01-23 | Exxon Research & Engineering Co. | Converter system |
| JPS5545276A (en) | 1978-09-27 | 1980-03-29 | Hitachi Ltd | Gate circuit of gate turn-off thyristor |
| JPS59172969A (ja) * | 1983-03-22 | 1984-09-29 | Toyo Electric Mfg Co Ltd | 自己消弧形サイリスタのゲート駆動回路 |
| JPS6022464A (ja) * | 1983-07-15 | 1985-02-04 | Hitachi Ltd | 自己消弧形半導体素子のゲ−ト回路 |
| JPS627774U (enExample) * | 1985-06-28 | 1987-01-17 | ||
| DE8718008U1 (de) | 1987-03-20 | 1993-02-18 | Leonhard, Reimund, Dipl.-Ing., 8043 Unterföhring | Steuerschaltung für einen stromgesteuerten Leistungshalbleiter |
| JPH0767271B2 (ja) | 1989-01-31 | 1995-07-19 | 東洋電機製造株式会社 | トランジスタのベース駆動回路 |
| JPH08107667A (ja) * | 1994-10-07 | 1996-04-23 | Hitachi Ltd | 自己消弧形素子の駆動回路 |
| JPH0937543A (ja) | 1995-07-19 | 1997-02-07 | Toshiba Corp | ゲート回路 |
| US5734258A (en) * | 1996-06-03 | 1998-03-31 | General Electric Company | Bidirectional buck boost converter |
| US5742146A (en) * | 1996-12-03 | 1998-04-21 | Magnetek, Inc. | Drive circuit for a switched reluctance motor with improved energy recovery using a common dump capacitor and recovering phase circuit |
| GB2324664B (en) * | 1997-04-23 | 2001-06-27 | Int Rectifier Corp | Resistor in series with bootstrap diode for monolithic gate device |
| KR100292485B1 (ko) * | 1997-12-27 | 2001-07-12 | 구자홍 | 에스알모터의구동회로 |
-
2000
- 2000-03-03 JP JP2000058216A patent/JP4080129B2/ja not_active Expired - Fee Related
- 2000-07-12 KR KR10-2000-0039920A patent/KR100385789B1/ko not_active Expired - Fee Related
- 2000-07-13 US US09/615,301 patent/US6268754B1/en not_active Expired - Fee Related
- 2000-07-14 DE DE60005758T patent/DE60005758T2/de not_active Expired - Lifetime
- 2000-07-14 EP EP00306006A patent/EP1069683B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE60005758D1 (de) | 2003-11-13 |
| DE60005758T2 (de) | 2005-06-02 |
| US6268754B1 (en) | 2001-07-31 |
| JP2001086733A (ja) | 2001-03-30 |
| EP1069683A2 (en) | 2001-01-17 |
| EP1069683B1 (en) | 2003-10-08 |
| KR100385789B1 (ko) | 2003-06-02 |
| KR20010049768A (ko) | 2001-06-15 |
| EP1069683A3 (en) | 2001-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3811681B2 (ja) | 高電圧パルス発生回路 | |
| JP3812353B2 (ja) | 半導体電力変換装置 | |
| US7919887B2 (en) | High repetitous pulse generation and energy recovery system | |
| CN101154880B (zh) | 抑制浪涌电压的半导体器件 | |
| JP4837336B2 (ja) | ゲート指令装置、電動機指令機器及びターンオフ指令方法 | |
| US6426666B1 (en) | Diode-assisted gate turn-off thyristor | |
| JP2003052178A (ja) | 3レベルインバータ装置 | |
| EP2801153B1 (en) | Apparatus and method for control of semiconductor switching devices | |
| JP4080129B2 (ja) | 電力用半導体スイッチのゲート駆動回路 | |
| JP4506276B2 (ja) | 自己消弧形半導体素子の駆動回路 | |
| JP3261911B2 (ja) | 半導体装置のスナバ回路 | |
| US6069472A (en) | Converter/inverter using a high efficiency switching circuit | |
| JP3569192B2 (ja) | 半導体電力変換装置 | |
| JPH10209832A (ja) | 半導体スイッチ回路 | |
| EP1421662A1 (en) | An electrical apparatus and a limiting method | |
| JP2003033044A (ja) | スナバ回路 | |
| US7733067B2 (en) | Burst frequency resonant inverter | |
| Giannakis et al. | A Three-Level Voltage-Source Gate Driver for SiC MOSFETs in Synchronous Rectification Mode | |
| JPS5914356A (ja) | ゲ−トタ−ンオフサイリスタのゲ−ト制御装置 | |
| Peter | Characteristics of power semiconductors | |
| JP4113405B2 (ja) | 半導体素子のゲート駆動回路及び半導体装置 | |
| SU1629937A1 (ru) | Устройство дл выключени тиристора | |
| GB2050738A (en) | Switching inductive loads | |
| Burgum | The GTO—a new power switch | |
| Li et al. | A novel approach for realizing hard-driven gate-turn-off thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050901 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050901 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070824 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070918 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071106 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080205 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080206 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110215 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120215 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130215 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130215 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |