JP4076333B2 - 半導体レーザ装置及び光ディスク再生記録装置 - Google Patents

半導体レーザ装置及び光ディスク再生記録装置 Download PDF

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Publication number
JP4076333B2
JP4076333B2 JP2001308713A JP2001308713A JP4076333B2 JP 4076333 B2 JP4076333 B2 JP 4076333B2 JP 2001308713 A JP2001308713 A JP 2001308713A JP 2001308713 A JP2001308713 A JP 2001308713A JP 4076333 B2 JP4076333 B2 JP 4076333B2
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layer
semiconductor laser
laser device
quantum well
strain
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JP2003115640A (ja
JP2003115640A5 (enExample
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秀一 蛭川
健 大林
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Sharp Corp
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Sharp Corp
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JP2001308713A 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置 Expired - Fee Related JP4076333B2 (ja)

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JP2001308713A JP4076333B2 (ja) 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置

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JP2001308713A JP4076333B2 (ja) 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置

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JP2003115640A JP2003115640A (ja) 2003-04-18
JP2003115640A5 JP2003115640A5 (enExample) 2005-04-07
JP4076333B2 true JP4076333B2 (ja) 2008-04-16

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088074A (ja) * 2007-09-28 2009-04-23 Mitsubishi Electric Corp 半導体装置の製造方法
JP2013187309A (ja) * 2012-03-07 2013-09-19 Fujitsu Ltd 半導体装置及びその製造方法
CN115864131A (zh) * 2023-01-05 2023-03-28 电子科技大学 一种无铝有源区垂直腔面发射激光器及其制备方法

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