JP2003115640A5 - - Google Patents

Download PDF

Info

Publication number
JP2003115640A5
JP2003115640A5 JP2001308713A JP2001308713A JP2003115640A5 JP 2003115640 A5 JP2003115640 A5 JP 2003115640A5 JP 2001308713 A JP2001308713 A JP 2001308713A JP 2001308713 A JP2001308713 A JP 2001308713A JP 2003115640 A5 JP2003115640 A5 JP 2003115640A5
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
layer
quantum well
cladding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001308713A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003115640A (ja
JP4076333B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001308713A priority Critical patent/JP4076333B2/ja
Priority claimed from JP2001308713A external-priority patent/JP4076333B2/ja
Publication of JP2003115640A publication Critical patent/JP2003115640A/ja
Publication of JP2003115640A5 publication Critical patent/JP2003115640A5/ja
Application granted granted Critical
Publication of JP4076333B2 publication Critical patent/JP4076333B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001308713A 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置 Expired - Fee Related JP4076333B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001308713A JP4076333B2 (ja) 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001308713A JP4076333B2 (ja) 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置

Publications (3)

Publication Number Publication Date
JP2003115640A JP2003115640A (ja) 2003-04-18
JP2003115640A5 true JP2003115640A5 (enExample) 2005-04-07
JP4076333B2 JP4076333B2 (ja) 2008-04-16

Family

ID=19127979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001308713A Expired - Fee Related JP4076333B2 (ja) 2001-10-04 2001-10-04 半導体レーザ装置及び光ディスク再生記録装置

Country Status (1)

Country Link
JP (1) JP4076333B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088074A (ja) * 2007-09-28 2009-04-23 Mitsubishi Electric Corp 半導体装置の製造方法
JP2013187309A (ja) * 2012-03-07 2013-09-19 Fujitsu Ltd 半導体装置及びその製造方法
CN115864131A (zh) * 2023-01-05 2023-03-28 电子科技大学 一种无铝有源区垂直腔面发射激光器及其制备方法

Similar Documents

Publication Publication Date Title
TWI235501B (en) Nitride semiconductor laser device
JP2008503072A (ja) 広帯域発光装置
JP2001223441A (ja) 窒化物半導体の発光素子
JP2011513954A5 (enExample)
WO2003054353A3 (en) Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
JP2004342719A5 (enExample)
JP2005340625A5 (enExample)
JP2000077772A5 (enExample)
JP2003115640A5 (enExample)
JP4111696B2 (ja) 窒化物系半導体レーザ素子
JPH06268327A (ja) 半導体発光素子
EP0959541A3 (en) Semiconductor laser and method of manufacturing the same
JP5787069B2 (ja) 多波長半導体レーザ素子
JP2002289955A5 (enExample)
JP2006114811A (ja) 半導体レーザおよび光ディスク装置
WO1997033351A1 (en) Semiconductor laser
JP2003163415A5 (enExample)
TW200525846A (en) Semiconductor laser
JP3215531B2 (ja) 光増幅器
JP2005327907A (ja) 半導体レーザ素子
JP4786873B2 (ja) 半導体レーザ素子の製造方法
JP4185724B2 (ja) 半導体レーザ装置およびそれを用いた光ディスク装置
JP4812649B2 (ja) 窒化物系半導体発光素子及びその製造方法
JP2011003590A (ja) 半導体レーザ素子
JP3889772B2 (ja) 窒化物系半導体発光素子