JP2003115640A5 - - Google Patents

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Publication number
JP2003115640A5
JP2003115640A5 JP2001308713A JP2001308713A JP2003115640A5 JP 2003115640 A5 JP2003115640 A5 JP 2003115640A5 JP 2001308713 A JP2001308713 A JP 2001308713A JP 2001308713 A JP2001308713 A JP 2001308713A JP 2003115640 A5 JP2003115640 A5 JP 2003115640A5
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JP
Japan
Prior art keywords
semiconductor laser
laser device
layer
quantum well
cladding layer
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JP2001308713A
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Japanese (ja)
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JP2003115640A (en
JP4076333B2 (en
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Priority to JP2001308713A priority Critical patent/JP4076333B2/en
Priority claimed from JP2001308713A external-priority patent/JP4076333B2/en
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Publication of JP2003115640A5 publication Critical patent/JP2003115640A5/ja
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Publication of JP4076333B2 publication Critical patent/JP4076333B2/en
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Claims (11)

ＧａＡｓ基板上に、下クラッド層、バリア層と量子井戸層を有する活性領域、及び上クラッド層を積層してなる半導体レーザ装置であって、前記量子井戸層がＩｎｘＧａ１−ｘＡｓ１−ｙＰｙからなり、ｘが０．６９以上である半導体レーザ装置。A semiconductor laser device in which a lower cladding layer, an active region having a barrier layer and a quantum well layer, and an upper cladding layer are stacked on a GaAs substrate, wherein the quantum well layer is In x Ga 1-x As 1- It consists y P y, a semiconductor laser device x is 0.69 or more. ｙが０．４０以上である請求項１に記載の半導体レーザ装置。  The semiconductor laser device according to claim 1, wherein y is 0.40 or more. 前記下クラッド層及び前記上クラッド層がＡｌを含有する請求項１又は２に記載の半導体レーザ装置。3. The semiconductor laser device according to claim 1, wherein the lower cladding layer and the upper cladding layer contain Al. 前記下クラッド層及び前記上クラッド層がＡｌＧａＡｓ層である請求項１〜３のいずれかに記載の半導体レーザ装置。  4. The semiconductor laser device according to claim 1, wherein the lower cladding layer and the upper cladding layer are AlGaAs layers. 前記バリア層がＩｎＧａＡｓＰ層である請求項１〜４のいずれかに記載の半導体レーザ装置。The semiconductor laser device according to claim 1, wherein the barrier layer is an InGaAsP layer. 前記量子井戸層の前記基板に対する圧縮歪が３．５％以下である請求項１〜５のいずれかに記載の半導体レーザ装置。  6. The semiconductor laser device according to claim 1, wherein a compressive strain of the quantum well layer with respect to the substrate is 3.5% or less. 前記量子井戸層厚が６０Å未満である請求項１〜６のいずれかに記載の半導体レーザ装置。  The semiconductor laser device according to claim 1, wherein the quantum well layer thickness is less than 60 mm. 前記量子井戸層厚が２０Å以上６０Å未満である請求項１〜６のいずれかに記載の半導体レーザ装置。  The semiconductor laser device according to claim 1, wherein the quantum well layer thickness is 20 to less than 60 mm. 前記バリア層が引っ張り歪を有し、前記量子井戸層及び前記バリア層からなる活性領域が歪補償構造を有する請求項１〜８のいずれかに記載の半導体レーザ装置。  The semiconductor laser device according to claim 1, wherein the barrier layer has tensile strain, and an active region including the quantum well layer and the barrier layer has a strain compensation structure. 発振波長が７６０ｎｍ以上８００ｎｍ未満である請求項１〜９のいずれかに記載の半導体レーザ装置。  The semiconductor laser device according to claim 1, wherein the oscillation wavelength is 760 nm or more and less than 800 nm. 請求項１〜１０のいずれかに記載の半導体レーザ装置を用いた光ディスク再生記録装置。  An optical disk reproducing / recording device using the semiconductor laser device according to claim 1.
JP2001308713A 2001-10-04 2001-10-04 Semiconductor laser device and optical disk reproducing / recording device Expired - Fee Related JP4076333B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001308713A JP4076333B2 (en) 2001-10-04 2001-10-04 Semiconductor laser device and optical disk reproducing / recording device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001308713A JP4076333B2 (en) 2001-10-04 2001-10-04 Semiconductor laser device and optical disk reproducing / recording device

Publications (3)

Publication Number Publication Date
JP2003115640A JP2003115640A (en) 2003-04-18
JP2003115640A5 true JP2003115640A5 (en) 2005-04-07
JP4076333B2 JP4076333B2 (en) 2008-04-16

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Family Applications (1)

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JP2001308713A Expired - Fee Related JP4076333B2 (en) 2001-10-04 2001-10-04 Semiconductor laser device and optical disk reproducing / recording device

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088074A (en) * 2007-09-28 2009-04-23 Mitsubishi Electric Corp Semiconductor device manufacturing method
JP2013187309A (en) * 2012-03-07 2013-09-19 Fujitsu Ltd Semiconductor device and manufacturing method of the same

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