JP2003163415A5 - - Google Patents

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Publication number
JP2003163415A5
JP2003163415A5 JP2002354976A JP2002354976A JP2003163415A5 JP 2003163415 A5 JP2003163415 A5 JP 2003163415A5 JP 2002354976 A JP2002354976 A JP 2002354976A JP 2002354976 A JP2002354976 A JP 2002354976A JP 2003163415 A5 JP2003163415 A5 JP 2003163415A5
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Prior art keywords
cladding layer
side cladding
nitride semiconductor
layer
semiconductor laser
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JP2002354976A
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Japanese (ja)
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JP2003163415A (en
JP3891108B2 (en
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Priority to JP2002354976A priority Critical patent/JP3891108B2/en
Priority claimed from JP2002354976A external-priority patent/JP3891108B2/en
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Publication of JP2003163415A5 publication Critical patent/JP2003163415A5/ja
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Publication of JP3891108B2 publication Critical patent/JP3891108B2/en
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Claims (5)

基板上にｎ側クラッド層と、活性層と、ｐ側クラッド層とを順に有し、活性層よりも上の層に、対向する共振面に対してほぼ垂直なリッジストライプを有する窒化物半導体レーザ素子において、
前記基板は窒化物半導体基板からなり、前記ｐ側クラッド層は少なくともＡｌを含む窒化物半導体層を有する超格子よりなり、該ｐ側クラッド層の膜厚は前記ｎ側クラッド層の膜厚よりも薄いものであって、該ｐ側クラッド層には前記リッジストライプが形成されており、さらに該リッジのストライプ幅の少なくとも一方が共振面に接近するに従って狭くなるように形成されていることを特徴とする窒化物半導体レーザ素子。A nitride semiconductor laser having an n-side cladding layer, an active layer, and a p-side cladding layer in this order on a substrate, and having a ridge stripe substantially perpendicular to the opposing resonant surface above the active layer In the element
The substrate is made of a nitride semiconductor substrate, the p-side cladding layer is made of a superlattice having a nitride semiconductor layer containing at least Al, and the film thickness of the p-side cladding layer is larger than the film thickness of the n-side cladding layer. The p-side cladding layer is thin, and the ridge stripe is formed, and at least one of the stripe widths of the ridge is formed so as to become narrower as it approaches the resonance surface. Nitride semiconductor laser device. 前記リッジストライプは、レーザ出力側のストライプ幅が全反射側のストライプ幅よりも狭くなることを特徴とする請求項１に記載の窒化物半導体レーザ素子。  2. The nitride semiconductor laser device according to claim 1, wherein the ridge stripe has a stripe width on the laser output side narrower than a stripe width on the total reflection side. 前記ｎ側クラッド層は、少なくともＡｌを含む窒化物半導体層を有する超格子よりなり、そのｎ側クラッド層全体の厚さが０．５μｍ以上で、かつそのｎ側クラッド層に含まれるＡｌ平均組成を百分率（％）で表した際に、ｎ側クラッド層全体の厚さ（μｍ）とＡｌ平均組成（％）との積が４．４以上となるように構成されていることを特徴とする請求項１または２に記載の窒化物半導体レーザ素子。  The n-side cladding layer is made of a superlattice having a nitride semiconductor layer containing at least Al, and the total thickness of the n-side cladding layer is 0.5 μm or more, and the Al average composition contained in the n-side cladding layer When expressed as a percentage (%), the product of the total thickness (μm) of the n-side cladding layer and the Al average composition (%) is 4.4 or more. The nitride semiconductor laser device according to claim 1 or 2. 前記ｐ側クラッド層全体の厚さが２．０μｍ以下であり、かつそのｐ側クラッド層に含まれるＡｌ平均組成を百分率（％）で表した際に、ｐ側クラッド層全体の厚さ（μｍ）とＡｌ平均組成（％）との積が４．４以上となるように構成されていることを特徴とする請求項１乃至３の内のいずれか１項に記載の窒化物半導体レーザ素子。  When the thickness of the entire p-side cladding layer is 2.0 μm or less and the Al average composition contained in the p-side cladding layer is expressed as a percentage (%), the thickness of the entire p-side cladding layer (μm 4) and the Al average composition (%), the nitride semiconductor laser element according to any one of claims 1 to 3, wherein the product is 4.4 or more. 前記ｎ側とｐ側のクラッド層との間にある活性層を含んだ窒化物半導体層の厚さが２００オングストローム以上、１．０μｍ以下の範囲にあることを特徴とする請求項１乃至４の内のいずれか１項に記載の窒化物半導体レーザ素子。  5. The nitride semiconductor layer including an active layer between the n-side and p-side cladding layers has a thickness in the range of 200 angstroms to 1.0 μm. The nitride semiconductor laser device according to any one of the above.
JP2002354976A 2002-12-06 2002-12-06 Nitride semiconductor light emitting device Expired - Fee Related JP3891108B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002354976A JP3891108B2 (en) 2002-12-06 2002-12-06 Nitride semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002354976A JP3891108B2 (en) 2002-12-06 2002-12-06 Nitride semiconductor light emitting device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP35254097A Division JP3647236B2 (en) 1997-12-22 1997-12-22 Nitride semiconductor laser device

Publications (3)

Publication Number Publication Date
JP2003163415A JP2003163415A (en) 2003-06-06
JP2003163415A5 true JP2003163415A5 (en) 2005-06-30
JP3891108B2 JP3891108B2 (en) 2007-03-14

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Family Applications (1)

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JP2002354976A Expired - Fee Related JP3891108B2 (en) 2002-12-06 2002-12-06 Nitride semiconductor light emitting device

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JP (1) JP3891108B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305635A (en) * 2006-05-09 2007-11-22 Sharp Corp Nitride semiconductor light-emitting element
JP2011082245A (en) * 2009-10-05 2011-04-21 Qd Laser Inc Optical semiconductor device and optical module using the same
DE102011100175B4 (en) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laser light source with a ridge waveguide structure and a mode filter structure
DE102015119226A1 (en) * 2015-11-09 2017-05-11 Osram Opto Semiconductors Gmbh Semiconductor laser diode

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