JP2000261095A5 - - Google Patents
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- JP2000261095A5 JP2000261095A5 JP1999063111A JP6311199A JP2000261095A5 JP 2000261095 A5 JP2000261095 A5 JP 2000261095A5 JP 1999063111 A JP1999063111 A JP 1999063111A JP 6311199 A JP6311199 A JP 6311199A JP 2000261095 A5 JP2000261095 A5 JP 2000261095A5
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- layer
- reflection mirror
- mirror layer
- high resistance
- semiconductor substrate
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- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000002093 peripheral Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 230000001590 oxidative Effects 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000003475 lamination Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 description 1
Description
【００１０】
【課題を解決するための手段】
本発明者は、鋭意検討の結果、下記手段により上記課題が解決されることを見出した。
すなわち、請求項１記載の本発明の面発光型半導体レーザは、半導体基板の主面に形成された第１反射ミラー層と、前記第１反射ミラー層上に積層され、かつ、量子井戸が形成された活性層と、前記第１反射ミラー層と共に共振器構造を構成する柱状の第２反射ミラー層を備えたポスト部と、前記第１反射ミラー層と前記第２反射ミラー層との間に形成され、周縁部が高抵抗化された周縁高抵抗化層と、を備えた面発光型半導体レーザであって、該周縁高抵抗化層の少なくとも１つの膜は、前記半導体基板の主面に平行な面内において直交する２軸方向に異なる膜厚分布を有することを特徴とする。[0010]
[Means for Solving the Problems]
As a result of intensive studies, the present inventor has found that the above-mentioned problems can be solved by the following means.
That is, in the surface-emitting type semiconductor laser according to the first aspect of the present invention, the first reflection mirror layer formed on the main surface of the semiconductor substrate and the first reflection mirror layer are stacked and the quantum well is formed. Between the first reflection mirror layer and the first active mirror layer, and a post portion including a pillar-shaped second reflection mirror layer that constitutes a resonator structure together with the first reflection mirror layer. It is a surface emitting semiconductor laser provided with the peripheral high resistance layer formed and whose peripheral part is high resistance, wherein at least one film of the peripheral high resistance layer is formed on the main surface of the semiconductor substrate. It is characterized by having different film thickness distributions in two axial directions orthogonal to each other in parallel planes.
【００１１】
高抵抗された領域は殆ど電流を通さないため、半導体基板の主面に平行な面内において直交する２軸方向に異なる膜厚分布の周縁高抵抗化層を設けたことにより、半導体基板の主面に平行な面内において直交する２軸方向に異なる割合で電流狭窄及び光の閉じ込めがなされる。このように、直交する２軸方向で異なる反射率分布と異なるストレスが活性層に与えられ、発振しきい値利得に異方性が生じ、しきい値利得の小さい軸方向のモードだけが選択的に得られ、レーザ光の偏波面を一定方向に固定化することができる。
また、周縁を高抵抗化することにより屈折率導波路が形成されるため、低しきい値電流の良好な素子特性が得られる。[0011]
Since the high resistance region hardly passes current, the peripheral high resistance layer of different film thickness distribution is provided in two axial directions orthogonal to each other in a plane parallel to the main surface of the semiconductor substrate. Current confinement and light confinement are made at different rates in two axial directions orthogonal to each other in a plane parallel to the plane. In this manner, different reflectance distributions and different stresses are applied to the active layer in two orthogonal axial directions, so that the oscillation threshold gain is anisotropic, and only the axial mode having a small threshold gain is selective. The polarization plane of the laser light can be fixed in a fixed direction.
In addition, since the refractive index waveguide is formed by increasing the resistance at the peripheral edge, good device characteristics with low threshold current can be obtained.
【００１７】
請求項４の発明は、請求項１から３までのいずれか1項に記載の面発光型半導体レーザにおいて、前記周縁高抵抗化層が、Ａｌ組成比が第１及び第２反射ミラー層のＡｌ組成比より高い半導体層を選択酸化することによって形成されたことを特徴とする。[0017]
The invention according to claim 4 is the surface emitting semiconductor laser according to any one of claims 1 to 3, wherein the peripheral high resistance layer has an Al composition ratio of the first and second reflection mirror layers. It is characterized in that it is formed by selectively oxidizing a semiconductor layer higher than the composition ratio.
Claims (5)
前記第１反射ミラー層上に積層され、かつ、量子井戸が形成された活性層と、 前記第１反射ミラー層と共に共振器構造を構成する柱状の第２反射ミラー層を備えたポスト部と、
前記第１反射ミラー層と前記第２反射ミラー層との間に形成され、周縁部が高抵抗化された周縁高抵抗化層と、を備えた面発光型半導体レーザであって、
該周縁高抵抗化層の少なくとも１つの膜は、前記半導体基板の主面に平行な面内において直交する２軸方向に異なる膜厚分布を有することを特徴とする面発光型半導体レーザ。A first reflection mirror layer formed on the main surface of the semiconductor substrate;
An active layer stacked on the first reflection mirror layer and having a quantum well formed thereon; and a post portion including a columnar second reflection mirror layer which constitutes a resonator structure together with the first reflection mirror layer.
A surface emitting semiconductor laser comprising: a peripheral high resistance layer formed between the first reflection mirror layer and the second reflection mirror layer and whose peripheral portion has a high resistance.
8. A surface-emitting type semiconductor laser according to claim 1, wherein at least one film of said peripheral high resistance layer has different film thickness distributions in two axial directions orthogonal to each other in a plane parallel to the main surface of said semiconductor substrate.
該凸部の表面または側面に露出した前記挿入層を高抵抗化する高抵抗化工程と、を含む面発光型半導体レーザの製造方法。A first reflection mirror layer, an active layer in which a quantum well is formed, and a second reflection mirror layer constituting a resonator structure together with the first reflection mirror layer are sequentially provided on the main surface of the semiconductor substrate, and When providing the reflection mirror layer, the active layer, and the second reflection mirror layer in order, it is possible to increase the resistance between the first reflection mirror layer and the second reflection mirror layer, A lamination step of providing an insertion layer having different film thicknesses in two axial directions orthogonal to each other in a plane parallel to the main surface of the semiconductor substrate and etching is performed until at least the surface or the side surface of the insertion layer is exposed. Etching process,
And b) increasing the resistance of the insertion layer exposed on the surface or the side surface of the convex portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06311199A JP3800852B2 (en) | 1999-03-10 | 1999-03-10 | Surface emitting semiconductor laser and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06311199A JP3800852B2 (en) | 1999-03-10 | 1999-03-10 | Surface emitting semiconductor laser and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000261095A JP2000261095A (en) | 2000-09-22 |
| JP2000261095A5 true JP2000261095A5 (en) | 2004-09-09 |
| JP3800852B2 JP3800852B2 (en) | 2006-07-26 |
Family
ID=13219866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06311199A Expired - Fee Related JP3800852B2 (en) | 1999-03-10 | 1999-03-10 | Surface emitting semiconductor laser and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3800852B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4138629B2 (en) * | 2003-11-06 | 2008-08-27 | 株式会社東芝 | Surface emitting semiconductor device and manufacturing method thereof |
| JP5408477B2 (en) * | 2008-05-13 | 2014-02-05 | 株式会社リコー | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
| JP5316783B2 (en) * | 2008-05-15 | 2013-10-16 | 株式会社リコー | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
| JP5282673B2 (en) * | 2009-06-22 | 2013-09-04 | 富士ゼロックス株式会社 | Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing device |
| JP5532321B2 (en) * | 2009-11-17 | 2014-06-25 | 株式会社リコー | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
-
1999
- 1999-03-10 JP JP06311199A patent/JP3800852B2/en not_active Expired - Fee Related
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