JP4068813B2 - 薄膜半導体装置の製造方法 - Google Patents
薄膜半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4068813B2 JP4068813B2 JP2001108056A JP2001108056A JP4068813B2 JP 4068813 B2 JP4068813 B2 JP 4068813B2 JP 2001108056 A JP2001108056 A JP 2001108056A JP 2001108056 A JP2001108056 A JP 2001108056A JP 4068813 B2 JP4068813 B2 JP 4068813B2
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- JP
- Japan
- Prior art keywords
- laser beam
- pulse
- semiconductor film
- pulse energy
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 209
- 239000010409 thin film Substances 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 29
- 239000010408 film Substances 0.000 claims description 211
- 239000010703 silicon Substances 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims description 25
- 239000011521 glass Substances 0.000 claims description 13
- 230000010355 oscillation Effects 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 description 64
- 230000008025 crystallization Effects 0.000 description 63
- 229910021417 amorphous silicon Inorganic materials 0.000 description 37
- 238000010438 heat treatment Methods 0.000 description 28
- 238000010521 absorption reaction Methods 0.000 description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 238000012790 confirmation Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000007493 shaping process Methods 0.000 description 8
- 229910021426 porous silicon Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001108056A JP4068813B2 (ja) | 2001-04-06 | 2001-04-06 | 薄膜半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001108056A JP4068813B2 (ja) | 2001-04-06 | 2001-04-06 | 薄膜半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002305145A JP2002305145A (ja) | 2002-10-18 |
| JP2002305145A5 JP2002305145A5 (enrdf_load_stackoverflow) | 2005-03-17 |
| JP4068813B2 true JP4068813B2 (ja) | 2008-03-26 |
Family
ID=18960266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001108056A Expired - Fee Related JP4068813B2 (ja) | 2001-04-06 | 2001-04-06 | 薄膜半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4068813B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148159B2 (en) * | 2003-09-29 | 2006-12-12 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
| JP2007158372A (ja) * | 2007-02-06 | 2007-06-21 | Advanced Display Inc | 半導体装置の製造方法および製造装置 |
| JP2012015445A (ja) | 2010-07-05 | 2012-01-19 | Japan Steel Works Ltd:The | レーザアニール処理装置およびレーザアニール処理方法 |
| JP2014220331A (ja) * | 2013-05-07 | 2014-11-20 | 株式会社リコー | 電磁波照射装置 |
-
2001
- 2001-04-06 JP JP2001108056A patent/JP4068813B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002305145A (ja) | 2002-10-18 |
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