JP4056500B2 - 伝送線路基板および半導体パッケージ - Google Patents

伝送線路基板および半導体パッケージ Download PDF

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Publication number
JP4056500B2
JP4056500B2 JP2004190315A JP2004190315A JP4056500B2 JP 4056500 B2 JP4056500 B2 JP 4056500B2 JP 2004190315 A JP2004190315 A JP 2004190315A JP 2004190315 A JP2004190315 A JP 2004190315A JP 4056500 B2 JP4056500 B2 JP 4056500B2
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JP
Japan
Prior art keywords
signal
lines
parallel
unnecessary
line
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Expired - Lifetime
Application number
JP2004190315A
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English (en)
Japanese (ja)
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JP2006014088A (ja
JP2006014088A5 (https=
Inventor
拓也 鈴木
輝雄 古屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004190315A priority Critical patent/JP4056500B2/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to EP12153560.3A priority patent/EP2463952B1/en
Priority to EP17177176.9A priority patent/EP3252866B1/en
Priority to EP17167803.0A priority patent/EP3229310A3/en
Priority to EP12153563A priority patent/EP2463953B1/en
Priority to PCT/JP2005/011649 priority patent/WO2006001388A1/ja
Priority to US11/631,108 priority patent/US7498907B2/en
Priority to EP05765133.3A priority patent/EP1777775B1/en
Publication of JP2006014088A publication Critical patent/JP2006014088A/ja
Publication of JP2006014088A5 publication Critical patent/JP2006014088A5/ja
Application granted granted Critical
Publication of JP4056500B2 publication Critical patent/JP4056500B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/16Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
    • H01P1/162Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion absorbing spurious or unwanted modes of propagation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/22Attenuating devices
    • H01P1/227Strip line attenuators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/533Cross-sectional shape
    • H10W72/534Cross-sectional shape being rectangular
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Waveguides (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Waveguide Connection Structure (AREA)
  • Microwave Amplifiers (AREA)
JP2004190315A 2004-06-28 2004-06-28 伝送線路基板および半導体パッケージ Expired - Lifetime JP4056500B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004190315A JP4056500B2 (ja) 2004-06-28 2004-06-28 伝送線路基板および半導体パッケージ
EP17177176.9A EP3252866B1 (en) 2004-06-28 2005-06-24 Transmission line substrate and semiconductor package
EP17167803.0A EP3229310A3 (en) 2004-06-28 2005-06-24 Transmission line substrate and semiconductor package
EP12153563A EP2463953B1 (en) 2004-06-28 2005-06-24 Transmission line substrate and semiconductor package
EP12153560.3A EP2463952B1 (en) 2004-06-28 2005-06-24 Transmission line substrate and semiconductor package
PCT/JP2005/011649 WO2006001388A1 (ja) 2004-06-28 2005-06-24 伝送線路基板および半導体パッケージ
US11/631,108 US7498907B2 (en) 2004-06-28 2005-06-24 Transmission line substrate and semiconductor package
EP05765133.3A EP1777775B1 (en) 2004-06-28 2005-06-24 Transmission line substrate and semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004190315A JP4056500B2 (ja) 2004-06-28 2004-06-28 伝送線路基板および半導体パッケージ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007245847A Division JP4516101B2 (ja) 2007-09-21 2007-09-21 伝送線路基板および半導体パッケージ

Publications (3)

Publication Number Publication Date
JP2006014088A JP2006014088A (ja) 2006-01-12
JP2006014088A5 JP2006014088A5 (https=) 2006-02-23
JP4056500B2 true JP4056500B2 (ja) 2008-03-05

Family

ID=35780747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004190315A Expired - Lifetime JP4056500B2 (ja) 2004-06-28 2004-06-28 伝送線路基板および半導体パッケージ

Country Status (4)

Country Link
US (1) US7498907B2 (https=)
EP (5) EP3229310A3 (https=)
JP (1) JP4056500B2 (https=)
WO (1) WO2006001388A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20140110708A (ko) * 2013-03-07 2014-09-17 가부시끼가이샤 도시바 고주파 반도체용 패키지 및 고주파 반도체 장치

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WO2005093828A1 (ja) * 2004-03-26 2005-10-06 Mitsubishi Denki Kabushiki Kaisha 高周波パッケージ、送受信モジュールおよび無線装置
JP4899645B2 (ja) * 2006-06-02 2012-03-21 株式会社村田製作所 モジュール部品及びその製造方法
EP2124253B1 (en) * 2007-03-14 2019-05-22 Mitsubishi Electric Corporation High frequency package
JP4978265B2 (ja) * 2007-03-23 2012-07-18 三菱電機株式会社 高周波モジュール
JP4670853B2 (ja) * 2007-10-16 2011-04-13 三菱電機株式会社 送受信モジュール
JP2009182398A (ja) * 2008-01-29 2009-08-13 Toshiba Corp 高周波基板線路
JP4492708B2 (ja) * 2008-01-31 2010-06-30 Tdk株式会社 高周波モジュール
JP5094515B2 (ja) * 2008-04-09 2012-12-12 三菱電機株式会社 ミリ波帯スイッチ
EP2284881B1 (en) * 2008-05-12 2021-02-17 Mitsubishi Electric Corporation High frequency module including a storing case and a plurality of high frequency circuits
JP2010080831A (ja) * 2008-09-29 2010-04-08 Kyocera Corp 配線基板、これを用いた電子部品及び電子機器
JP5093138B2 (ja) * 2009-02-02 2012-12-05 三菱電機株式会社 マイクロ波送受信モジュール
JP5495619B2 (ja) * 2009-05-21 2014-05-21 三菱電機株式会社 多層高周波パッケージ基板
JP5334686B2 (ja) * 2009-05-27 2013-11-06 三菱電機株式会社 多層高周波パッケージ基板
JP5656278B2 (ja) * 2009-07-27 2015-01-21 Nec東芝スペースシステム株式会社 気密封止筐体および気密封止筐体製造方法
US8912860B2 (en) * 2009-09-08 2014-12-16 Siklu Communication ltd. Millimeter-wave bare IC mounted within a laminated PCB and usable in a waveguide transition
US8536954B2 (en) * 2010-06-02 2013-09-17 Siklu Communication ltd. Millimeter wave multi-layer packaging including an RFIC cavity and a radiating cavity therein
US8878652B2 (en) 2009-11-13 2014-11-04 Zih Corp. Encoding module, associated encoding element, connector, printer-encoder and access control system
JP2011187550A (ja) * 2010-03-05 2011-09-22 Toshiba Corp 高周波パッケージ
US9398694B2 (en) 2011-01-18 2016-07-19 Sony Corporation Method of manufacturing a package for embedding one or more electronic components
US9839118B2 (en) * 2013-11-01 2017-12-05 Telefonaktiebolaget Lm Ericsson (Publ) Method and arrangement for board-to-board interconnection
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KR102251001B1 (ko) * 2014-06-26 2021-05-12 삼성전자주식회사 반도체 패키지
JP6520281B2 (ja) * 2015-03-24 2019-05-29 富士通株式会社 電子機器筐体
US9842813B2 (en) 2015-09-21 2017-12-12 Altera Corporation Tranmission line bridge interconnects
US9882549B2 (en) 2016-02-23 2018-01-30 Analog Devices Global Apparatus and methods for high linearity voltage variable attenuators
US9590591B1 (en) * 2016-03-17 2017-03-07 Analog Devices Global High frequency signal attenuators
US10103712B2 (en) 2016-12-15 2018-10-16 Analog Devices Global Voltage variable attenuator, an integrated circuit and a method of attenuation
JP2019012877A (ja) * 2017-06-29 2019-01-24 ソニーセミコンダクタソリューションズ株式会社 分配器および合成器
FR3079036A1 (fr) 2018-03-15 2019-09-20 Stmicroelectronics (Crolles 2) Sas Dispositif de filtrage dans un guide d'onde
FR3079037B1 (fr) * 2018-03-15 2020-09-04 St Microelectronics Crolles 2 Sas Dispositif de terminaison de guide d'onde
CN110676224A (zh) * 2019-11-12 2020-01-10 河北新华北集成电路有限公司 放大器芯片封装结构及制作方法
CN115211241A (zh) * 2020-05-07 2022-10-18 住友电气工业株式会社 电路模块和通信装置
WO2022003960A1 (ja) * 2020-07-03 2022-01-06 三菱電機株式会社 高周波装置
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KR20140110708A (ko) * 2013-03-07 2014-09-17 가부시끼가이샤 도시바 고주파 반도체용 패키지 및 고주파 반도체 장치
KR101602537B1 (ko) * 2013-03-07 2016-03-10 가부시끼가이샤 도시바 고주파 반도체용 패키지 및 고주파 반도체 장치

Also Published As

Publication number Publication date
EP3252866B1 (en) 2021-08-18
JP2006014088A (ja) 2006-01-12
EP2463952A1 (en) 2012-06-13
EP2463952B1 (en) 2017-06-21
US20070200204A1 (en) 2007-08-30
EP3229310A3 (en) 2018-01-10
EP2463953B1 (en) 2013-01-16
EP1777775A4 (en) 2009-04-15
EP3252866A1 (en) 2017-12-06
EP1777775B1 (en) 2017-04-26
WO2006001388A1 (ja) 2006-01-05
EP3229310A2 (en) 2017-10-11
US7498907B2 (en) 2009-03-03
EP2463953A1 (en) 2012-06-13
EP1777775A1 (en) 2007-04-25

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