JP4051922B2 - 五酸化タンタルからなるｍｉｓキャパシタの製造方法 - Google Patents

五酸化タンタルからなるｍｉｓキャパシタの製造方法 Download PDF

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Publication number
JP4051922B2
JP4051922B2 JP2001369449A JP2001369449A JP4051922B2 JP 4051922 B2 JP4051922 B2 JP 4051922B2 JP 2001369449 A JP2001369449 A JP 2001369449A JP 2001369449 A JP2001369449 A JP 2001369449A JP 4051922 B2 JP4051922 B2 JP 4051922B2
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film
silicon
forming
manufacturing
tantalum pentoxide
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Japanese (ja)
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JP2003168744A (ja
JP2003168744A5 (https=
Inventor
泰洋 嶋本
浩史 三木
正彦 平谷
紳一郎 木村
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Hitachi Ltd
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Hitachi Ltd
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JP2001369449A 2001-12-04 2001-12-04 五酸化タンタルからなるｍｉｓキャパシタの製造方法 Expired - Fee Related JP4051922B2 (ja)

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JP2001369449A JP4051922B2 (ja) 2001-12-04 2001-12-04 五酸化タンタルからなるｍｉｓキャパシタの製造方法

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JP2001369449A JP4051922B2 (ja) 2001-12-04 2001-12-04 五酸化タンタルからなるｍｉｓキャパシタの製造方法

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JP2003168744A JP2003168744A (ja) 2003-06-13
JP2003168744A5 JP2003168744A5 (https=) 2005-06-30
JP4051922B2 true JP4051922B2 (ja) 2008-02-27

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150416A (ja) * 2003-11-17 2005-06-09 Hitachi Ltd 半導体集積回路装置及びその製造方法
JP4111963B2 (ja) * 2004-06-10 2008-07-02 松下電器産業株式会社 キャパシタの製造方法

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