JP4051785B2 - プラズマエッチング法 - Google Patents

プラズマエッチング法 Download PDF

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Publication number
JP4051785B2
JP4051785B2 JP33271298A JP33271298A JP4051785B2 JP 4051785 B2 JP4051785 B2 JP 4051785B2 JP 33271298 A JP33271298 A JP 33271298A JP 33271298 A JP33271298 A JP 33271298A JP 4051785 B2 JP4051785 B2 JP 4051785B2
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Japan
Prior art keywords
layer
base material
aluminum
ceramic
plasma etching
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Expired - Fee Related
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JP33271298A
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English (en)
Japanese (ja)
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JP2000164567A (ja
JP2000164567A5 (enExample
Inventor
新吾 門村
恵 高津
信介 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP33271298A priority Critical patent/JP4051785B2/ja
Publication of JP2000164567A publication Critical patent/JP2000164567A/ja
Publication of JP2000164567A5 publication Critical patent/JP2000164567A5/ja
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Publication of JP4051785B2 publication Critical patent/JP4051785B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Non-Volatile Memory (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP33271298A 1998-11-24 1998-11-24 プラズマエッチング法 Expired - Fee Related JP4051785B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33271298A JP4051785B2 (ja) 1998-11-24 1998-11-24 プラズマエッチング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33271298A JP4051785B2 (ja) 1998-11-24 1998-11-24 プラズマエッチング法

Publications (3)

Publication Number Publication Date
JP2000164567A JP2000164567A (ja) 2000-06-16
JP2000164567A5 JP2000164567A5 (enExample) 2005-11-04
JP4051785B2 true JP4051785B2 (ja) 2008-02-27

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JP33271298A Expired - Fee Related JP4051785B2 (ja) 1998-11-24 1998-11-24 プラズマエッチング法

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JP (1) JP4051785B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10027247C2 (de) * 2000-05-31 2003-09-25 Iut Inst Fuer Umwelttechnologi Plasmagenerator mit dielektrisch behinderter Entladung
JP2002190581A (ja) * 2000-12-20 2002-07-05 Fujitsu Ltd 半導体装置及びその製造方法
JP4865978B2 (ja) 2002-02-28 2012-02-01 富士通セミコンダクター株式会社 半導体装置の製造方法
DE102006051550B4 (de) 2006-10-30 2012-02-02 Fhr Anlagenbau Gmbh Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid
US10177014B2 (en) 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
JP6611347B2 (ja) * 2016-06-06 2019-11-27 アドバンスコンポジット株式会社 ヒータ及びその製造方法
CN119581304A (zh) * 2023-09-06 2025-03-07 江苏鲁汶仪器股份有限公司 一种介电质窗口及半导体设备

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JP2000164567A (ja) 2000-06-16

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