JP2000164567A5 - - Google Patents
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- Publication number
- JP2000164567A5 JP2000164567A5 JP1998332712A JP33271298A JP2000164567A5 JP 2000164567 A5 JP2000164567 A5 JP 2000164567A5 JP 1998332712 A JP1998332712 A JP 1998332712A JP 33271298 A JP33271298 A JP 33271298A JP 2000164567 A5 JP2000164567 A5 JP 2000164567A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferroelectric
- electric field
- ferroelectric thin
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007582 slurry-cast process Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33271298A JP4051785B2 (ja) | 1998-11-24 | 1998-11-24 | プラズマエッチング法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33271298A JP4051785B2 (ja) | 1998-11-24 | 1998-11-24 | プラズマエッチング法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000164567A JP2000164567A (ja) | 2000-06-16 |
| JP2000164567A5 true JP2000164567A5 (enExample) | 2005-11-04 |
| JP4051785B2 JP4051785B2 (ja) | 2008-02-27 |
Family
ID=18258030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33271298A Expired - Fee Related JP4051785B2 (ja) | 1998-11-24 | 1998-11-24 | プラズマエッチング法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4051785B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10027247C2 (de) * | 2000-05-31 | 2003-09-25 | Iut Inst Fuer Umwelttechnologi | Plasmagenerator mit dielektrisch behinderter Entladung |
| JP2002190581A (ja) * | 2000-12-20 | 2002-07-05 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP4865978B2 (ja) | 2002-02-28 | 2012-02-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| DE102006051550B4 (de) | 2006-10-30 | 2012-02-02 | Fhr Anlagenbau Gmbh | Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid |
| US10177014B2 (en) | 2012-12-14 | 2019-01-08 | Applied Materials, Inc. | Thermal radiation barrier for substrate processing chamber components |
| JP6611347B2 (ja) * | 2016-06-06 | 2019-11-27 | アドバンスコンポジット株式会社 | ヒータ及びその製造方法 |
| CN119581304A (zh) * | 2023-09-06 | 2025-03-07 | 江苏鲁汶仪器股份有限公司 | 一种介电质窗口及半导体设备 |
-
1998
- 1998-11-24 JP JP33271298A patent/JP4051785B2/ja not_active Expired - Fee Related
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