JP4043139B2 - 電子放出源の製造方法 - Google Patents

電子放出源の製造方法 Download PDF

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Publication number
JP4043139B2
JP4043139B2 JP9838699A JP9838699A JP4043139B2 JP 4043139 B2 JP4043139 B2 JP 4043139B2 JP 9838699 A JP9838699 A JP 9838699A JP 9838699 A JP9838699 A JP 9838699A JP 4043139 B2 JP4043139 B2 JP 4043139B2
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Prior art keywords
cathode electrode
electron emission
carbon
carbon nanotubes
emission source
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Expired - Fee Related
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JP9838699A
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Japanese (ja)
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JP2000294119A (ja
JP2000294119A5 (enExample
Inventor
茂生 伊藤
辰雄 山浦
泰雄 田辺
源太郎 田中
浩和 高梨
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Futaba Corp
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Futaba Corp
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Priority to JP9838699A priority Critical patent/JP4043139B2/ja
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Publication of JP2000294119A5 publication Critical patent/JP2000294119A5/ja
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Publication of JP4043139B2 publication Critical patent/JP4043139B2/ja
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  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP9838699A 1999-04-06 1999-04-06 電子放出源の製造方法 Expired - Fee Related JP4043139B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9838699A JP4043139B2 (ja) 1999-04-06 1999-04-06 電子放出源の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9838699A JP4043139B2 (ja) 1999-04-06 1999-04-06 電子放出源の製造方法

Publications (3)

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JP2000294119A JP2000294119A (ja) 2000-10-20
JP2000294119A5 JP2000294119A5 (enExample) 2006-06-08
JP4043139B2 true JP4043139B2 (ja) 2008-02-06

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JP9838699A Expired - Fee Related JP4043139B2 (ja) 1999-04-06 1999-04-06 電子放出源の製造方法

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JP (1) JP4043139B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005097003A (ja) * 2000-05-31 2005-04-14 Nec Corp カーボンナノチューブの固着方法
KR100443675B1 (ko) * 2001-07-19 2004-08-09 엘지전자 주식회사 탄소나노튜브를 이용한 전자빔 정보저장장치
AU2003244079A1 (en) * 2002-06-27 2004-01-19 Nec Corporation Cold cathode structure, electron emission device, and electron emission type display device
KR20050106670A (ko) * 2004-05-06 2005-11-11 삼성에스디아이 주식회사 Ｃｎｔ 전계방출소자의 제조방법
KR20050114032A (ko) * 2004-05-31 2005-12-05 삼성에스디아이 주식회사 고분자 재료를 이용한 플렉서블 이미터 및 그 제조 방법
JP4061411B2 (ja) * 2005-01-25 2008-03-19 国立大学法人信州大学 電界放出電極およびその製造方法
KR20080013366A (ko) * 2006-08-08 2008-02-13 한국과학기술원 나노와이어의 정렬을 통한 전계방출 에미터 전극의제조방법
US9305766B2 (en) 2009-12-22 2016-04-05 Qunano Ab Method for manufacturing a nanowire structure

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JP2000294119A (ja) 2000-10-20

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