JP4036572B2 - 電子放出源の製造方法 - Google Patents
電子放出源の製造方法 Download PDFInfo
- Publication number
- JP4036572B2 JP4036572B2 JP20256299A JP20256299A JP4036572B2 JP 4036572 B2 JP4036572 B2 JP 4036572B2 JP 20256299 A JP20256299 A JP 20256299A JP 20256299 A JP20256299 A JP 20256299A JP 4036572 B2 JP4036572 B2 JP 4036572B2
- Authority
- JP
- Japan
- Prior art keywords
- electron emission
- emitter
- emission source
- cathode conductor
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004020 conductor Substances 0.000 claims description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 33
- 239000002041 carbon nanotube Substances 0.000 claims description 29
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 13
- 229910003472 fullerene Inorganic materials 0.000 claims description 13
- 239000002088 nanocapsule Substances 0.000 claims description 13
- 239000002105 nanoparticle Substances 0.000 claims description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 6
- 239000003575 carbonaceous material Substances 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 230000005684 electric field Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002116 nanohorn Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20256299A JP4036572B2 (ja) | 1999-07-16 | 1999-07-16 | 電子放出源の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20256299A JP4036572B2 (ja) | 1999-07-16 | 1999-07-16 | 電子放出源の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001035361A JP2001035361A (ja) | 2001-02-09 |
| JP2001035361A5 JP2001035361A5 (enrdf_load_stackoverflow) | 2006-06-08 |
| JP4036572B2 true JP4036572B2 (ja) | 2008-01-23 |
Family
ID=16459558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20256299A Expired - Fee Related JP4036572B2 (ja) | 1999-07-16 | 1999-07-16 | 電子放出源の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4036572B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3632682B2 (ja) * | 2001-07-18 | 2005-03-23 | ソニー株式会社 | 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 |
| JP2003168355A (ja) * | 2001-11-30 | 2003-06-13 | Sony Corp | 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 |
| JP3432818B1 (ja) | 2002-03-07 | 2003-08-04 | 科学技術振興事業団 | ナノホーン担持体とその製造方法 |
| JP2003303540A (ja) * | 2002-04-11 | 2003-10-24 | Sony Corp | 電界電子放出膜、電界電子放出電極および電界電子放出表示装置 |
| JP4543604B2 (ja) * | 2002-05-20 | 2010-09-15 | ソニー株式会社 | 電子放出領域の製造方法 |
| JP2004178972A (ja) * | 2002-11-27 | 2004-06-24 | Sony Corp | 電子放出素子の製造方法及び表示装置の製造方法 |
| US7044822B2 (en) * | 2002-12-20 | 2006-05-16 | Samsung Sdi Co., Ltd. | Method of manufacturing a field emission device utilizing the sacrificial layer |
| KR101082440B1 (ko) | 2005-10-04 | 2011-11-11 | 삼성에스디아이 주식회사 | 전자 방출 소자, 이를 구비한 전자 방출 디스플레이 장치및 그 제조 방법 |
| CN101452797B (zh) | 2007-12-05 | 2011-11-09 | 清华大学 | 场发射电子源及其制备方法 |
| JP5926709B2 (ja) | 2012-08-29 | 2016-05-25 | 国立大学法人東北大学 | 電界電子放出膜、電界電子放出素子、発光素子およびそれらの製造方法 |
-
1999
- 1999-07-16 JP JP20256299A patent/JP4036572B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001035361A (ja) | 2001-02-09 |
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