JP4031628B2 - 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法 - Google Patents

半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法 Download PDF

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JP4031628B2
JP4031628B2 JP2001307452A JP2001307452A JP4031628B2 JP 4031628 B2 JP4031628 B2 JP 4031628B2 JP 2001307452 A JP2001307452 A JP 2001307452A JP 2001307452 A JP2001307452 A JP 2001307452A JP 4031628 B2 JP4031628 B2 JP 4031628B2
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plane
crystal
substrate
semiconductor multilayer
gallium nitride
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Japanese (ja)
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JP2003112999A (ja
JP2003112999A5 (https=
Inventor
信之 大塚
歩 辻村
明彦 石橋
靖利 川口
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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JP2001307452A 2001-10-03 2001-10-03 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法 Expired - Fee Related JP4031628B2 (ja)

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JP2001307452A JP4031628B2 (ja) 2001-10-03 2001-10-03 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法

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JP2001307452A JP4031628B2 (ja) 2001-10-03 2001-10-03 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法

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JP2003112999A JP2003112999A (ja) 2003-04-18
JP2003112999A5 JP2003112999A5 (https=) 2005-06-23
JP4031628B2 true JP4031628B2 (ja) 2008-01-09

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005104742A (ja) * 2003-09-26 2005-04-21 Kyocera Corp 単結晶育成用基板および半導体装置
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
JP2006052123A (ja) * 2004-07-12 2006-02-23 Sumitomo Electric Ind Ltd ｎ型ＡｌＮ結晶、ｎ型ＡｌＧａＮ固溶体及びそれらの製造方法
KR101145755B1 (ko) * 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
JP4518209B1 (ja) * 2009-09-07 2010-08-04 住友電気工業株式会社 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
JP4277826B2 (ja) 2005-06-23 2009-06-10 住友電気工業株式会社 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
US9708735B2 (en) 2005-06-23 2017-07-18 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US8771552B2 (en) 2005-06-23 2014-07-08 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
KR101347848B1 (ko) * 2005-09-09 2014-01-06 재팬 사이언스 앤드 테크놀로지 에이젼시 유기금속 화학기상증착법을 통한 반극성（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ의 성장강화방법
TWI490918B (zh) * 2006-01-20 2015-07-01 美國加利福尼亞大學董事會 半極性氮化（鋁，銦，鎵，硼）之改良成長方法
EP2175480A4 (en) * 2007-07-19 2012-12-19 Mitsubishi Chem Corp GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME
JP2010539732A (ja) * 2007-09-19 2010-12-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の窒化物基板の面積を増加させる方法
JP4390007B2 (ja) 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
JP2010027924A (ja) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光ダイオード
JP4730422B2 (ja) 2008-10-24 2011-07-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法、及びｉｉｉ族窒化物半導体エピタキシャルウエハ
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
JP5120350B2 (ja) * 2009-08-24 2013-01-16 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ

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