JP4031327B2 - レジスト組成物 - Google Patents

レジスト組成物 Download PDF

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Publication number
JP4031327B2
JP4031327B2 JP2002260191A JP2002260191A JP4031327B2 JP 4031327 B2 JP4031327 B2 JP 4031327B2 JP 2002260191 A JP2002260191 A JP 2002260191A JP 2002260191 A JP2002260191 A JP 2002260191A JP 4031327 B2 JP4031327 B2 JP 4031327B2
Authority
JP
Japan
Prior art keywords
group
resin
general formula
repeating unit
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002260191A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004101642A (ja
JP2004101642A5 (zh
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002260191A priority Critical patent/JP4031327B2/ja
Priority to KR1020030059746A priority patent/KR100958126B1/ko
Publication of JP2004101642A publication Critical patent/JP2004101642A/ja
Publication of JP2004101642A5 publication Critical patent/JP2004101642A5/ja
Application granted granted Critical
Publication of JP4031327B2 publication Critical patent/JP4031327B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002260191A 2002-09-05 2002-09-05 レジスト組成物 Expired - Lifetime JP4031327B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002260191A JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物
KR1020030059746A KR100958126B1 (ko) 2002-09-05 2003-08-28 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002260191A JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004101642A JP2004101642A (ja) 2004-04-02
JP2004101642A5 JP2004101642A5 (zh) 2005-09-22
JP4031327B2 true JP4031327B2 (ja) 2008-01-09

Family

ID=32260979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002260191A Expired - Lifetime JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物

Country Status (2)

Country Link
JP (1) JP4031327B2 (zh)
KR (1) KR100958126B1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4260772B2 (ja) * 2003-01-31 2009-04-30 東京応化工業株式会社 レジスト組成物の評価方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2005300998A (ja) * 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4663456B2 (ja) * 2005-09-05 2011-04-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5077355B2 (ja) 2007-10-01 2012-11-21 Ｊｓｒ株式会社 感放射線性組成物
US8697804B1 (en) 2008-01-24 2014-04-15 E I Du Pont De Nemours And Company Nucleated poly(trimethylene terephthalate)
TWI533082B (zh) 2008-09-10 2016-05-11 Jsr股份有限公司 敏輻射性樹脂組成物
WO2010029982A1 (ja) 2008-09-12 2010-03-18 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
WO2012043684A1 (ja) 2010-09-29 2012-04-05 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
JP6004869B2 (ja) * 2012-09-28 2016-10-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP6473502B2 (ja) * 2015-05-29 2019-02-20 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び上層膜形成用組成物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3810957B2 (ja) * 1998-08-06 2006-08-16 株式会社東芝 レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
JP4046452B2 (ja) * 1999-12-06 2008-02-13 ダイセル化学工業株式会社 フォトレジスト用重合性不飽和化合物、及びフォトレジスト用樹脂組成物
JP2002040661A (ja) * 2000-07-24 2002-02-06 Toray Ind Inc ポジ型感放射線性組成物

Also Published As

Publication number Publication date
JP2004101642A (ja) 2004-04-02
KR100958126B1 (ko) 2010-05-18
KR20040030278A (ko) 2004-04-09

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