JP4027929B2 - 半導体基板用研磨液組成物 - Google Patents

半導体基板用研磨液組成物 Download PDF

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Publication number
JP4027929B2
JP4027929B2 JP2004347220A JP2004347220A JP4027929B2 JP 4027929 B2 JP4027929 B2 JP 4027929B2 JP 2004347220 A JP2004347220 A JP 2004347220A JP 2004347220 A JP2004347220 A JP 2004347220A JP 4027929 B2 JP4027929 B2 JP 4027929B2
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JP
Japan
Prior art keywords
polishing
semiconductor substrate
weight
ceria particles
liquid composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2004347220A
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English (en)
Japanese (ja)
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JP2006156825A (ja
JP2006156825A5 (https=
Inventor
康洋 米田
真美 代田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
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Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Priority to JP2004347220A priority Critical patent/JP4027929B2/ja
Priority to US11/262,852 priority patent/US20060113283A1/en
Priority to TW094139776A priority patent/TWI414588B/zh
Priority to CN2005101253821A priority patent/CN1782013B/zh
Priority to KR1020050115307A priority patent/KR101150549B1/ko
Publication of JP2006156825A publication Critical patent/JP2006156825A/ja
Publication of JP2006156825A5 publication Critical patent/JP2006156825A5/ja
Application granted granted Critical
Publication of JP4027929B2 publication Critical patent/JP4027929B2/ja
Priority to US12/406,440 priority patent/US8058172B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2004347220A 2004-11-30 2004-11-30 半導体基板用研磨液組成物 Expired - Fee Related JP4027929B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物
US11/262,852 US20060113283A1 (en) 2004-11-30 2005-11-01 Polishing composition for a semiconductor substrate
TW094139776A TWI414588B (zh) 2004-11-30 2005-11-11 半導體基板用研磨液組合物
CN2005101253821A CN1782013B (zh) 2004-11-30 2005-11-16 半导体基板用研磨液组合物
KR1020050115307A KR101150549B1 (ko) 2004-11-30 2005-11-30 반도체 기판용 연마액 조성물
US12/406,440 US8058172B2 (en) 2004-11-30 2009-03-18 Polishing process of a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007067289A Division JP2007227943A (ja) 2007-03-15 2007-03-15 半導体基板用研磨液組成物

Publications (3)

Publication Number Publication Date
JP2006156825A JP2006156825A (ja) 2006-06-15
JP2006156825A5 JP2006156825A5 (https=) 2007-01-25
JP4027929B2 true JP4027929B2 (ja) 2007-12-26

Family

ID=36566414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004347220A Expired - Fee Related JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Country Status (5)

Country Link
US (2) US20060113283A1 (https=)
JP (1) JP4027929B2 (https=)
KR (1) KR101150549B1 (https=)
CN (1) CN1782013B (https=)
TW (1) TWI414588B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
WO2008081943A1 (ja) 2006-12-28 2008-07-10 Kao Corporation 研磨液組成物
JP5403909B2 (ja) * 2007-04-05 2014-01-29 花王株式会社 研磨液組成物
JP5403910B2 (ja) * 2007-04-23 2014-01-29 花王株式会社 研磨液組成物
JP5403956B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
JP5403957B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US8648324B2 (en) * 2010-03-19 2014-02-11 International Business Machines Corporation Glassy carbon nanostructures
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
SG11201404747UA (en) * 2012-02-10 2014-09-26 Basf Se Chemical mechanical polishing (cmp) composition comprising a protein
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
KR101396252B1 (ko) * 2012-06-20 2014-05-19 주식회사 케이씨텍 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
KR101406760B1 (ko) * 2012-11-07 2014-06-19 주식회사 케이씨텍 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
EP2957613B1 (en) * 2013-02-13 2020-11-18 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523395A (ja) * 1997-04-30 2001-11-20 ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー 半導体ウェーハの上面を平坦化する方法
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
KR100797218B1 (ko) * 1998-12-25 2008-01-23 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
JP2000237952A (ja) * 1999-02-19 2000-09-05 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP4430331B2 (ja) 2003-05-07 2010-03-10 ニッタ・ハース株式会社 半導体ウェハ研磨用組成物
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물

Also Published As

Publication number Publication date
JP2006156825A (ja) 2006-06-15
CN1782013B (zh) 2010-05-05
TWI414588B (zh) 2013-11-11
US20090181541A1 (en) 2009-07-16
KR20060060616A (ko) 2006-06-05
CN1782013A (zh) 2006-06-07
US20060113283A1 (en) 2006-06-01
KR101150549B1 (ko) 2012-05-30
US8058172B2 (en) 2011-11-15
TW200621965A (en) 2006-07-01

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