TWI414588B - 半導體基板用研磨液組合物 - Google Patents

半導體基板用研磨液組合物 Download PDF

Info

Publication number
TWI414588B
TWI414588B TW094139776A TW94139776A TWI414588B TW I414588 B TWI414588 B TW I414588B TW 094139776 A TW094139776 A TW 094139776A TW 94139776 A TW94139776 A TW 94139776A TW I414588 B TWI414588 B TW I414588B
Authority
TW
Taiwan
Prior art keywords
polishing
semiconductor substrate
cerium oxide
film
liquid composition
Prior art date
Application number
TW094139776A
Other languages
English (en)
Chinese (zh)
Other versions
TW200621965A (en
Inventor
米田康洋
代田真美
Original Assignee
花王股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 花王股份有限公司 filed Critical 花王股份有限公司
Publication of TW200621965A publication Critical patent/TW200621965A/zh
Application granted granted Critical
Publication of TWI414588B publication Critical patent/TWI414588B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094139776A 2004-11-30 2005-11-11 半導體基板用研磨液組合物 TWI414588B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Publications (2)

Publication Number Publication Date
TW200621965A TW200621965A (en) 2006-07-01
TWI414588B true TWI414588B (zh) 2013-11-11

Family

ID=36566414

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139776A TWI414588B (zh) 2004-11-30 2005-11-11 半導體基板用研磨液組合物

Country Status (5)

Country Link
US (2) US20060113283A1 (https=)
JP (1) JP4027929B2 (https=)
KR (1) KR101150549B1 (https=)
CN (1) CN1782013B (https=)
TW (1) TWI414588B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
WO2008081943A1 (ja) 2006-12-28 2008-07-10 Kao Corporation 研磨液組成物
JP5403909B2 (ja) * 2007-04-05 2014-01-29 花王株式会社 研磨液組成物
JP5403910B2 (ja) * 2007-04-23 2014-01-29 花王株式会社 研磨液組成物
JP5403956B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
JP5403957B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US8648324B2 (en) * 2010-03-19 2014-02-11 International Business Machines Corporation Glassy carbon nanostructures
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
SG11201404747UA (en) * 2012-02-10 2014-09-26 Basf Se Chemical mechanical polishing (cmp) composition comprising a protein
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
KR101396252B1 (ko) * 2012-06-20 2014-05-19 주식회사 케이씨텍 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
KR101406760B1 (ko) * 2012-11-07 2014-06-19 주식회사 케이씨텍 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
EP2957613B1 (en) * 2013-02-13 2020-11-18 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
US20030124862A1 (en) * 2001-12-28 2003-07-03 Fujikoshi Machinery Corp. Method of polishing copper layer of substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523395A (ja) * 1997-04-30 2001-11-20 ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー 半導体ウェーハの上面を平坦化する方法
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
KR100797218B1 (ko) * 1998-12-25 2008-01-23 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
JP2000237952A (ja) * 1999-02-19 2000-09-05 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP4430331B2 (ja) 2003-05-07 2010-03-10 ニッタ・ハース株式会社 半導体ウェハ研磨用組成物
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
US20030124862A1 (en) * 2001-12-28 2003-07-03 Fujikoshi Machinery Corp. Method of polishing copper layer of substrate

Also Published As

Publication number Publication date
JP2006156825A (ja) 2006-06-15
CN1782013B (zh) 2010-05-05
US20090181541A1 (en) 2009-07-16
KR20060060616A (ko) 2006-06-05
CN1782013A (zh) 2006-06-07
US20060113283A1 (en) 2006-06-01
KR101150549B1 (ko) 2012-05-30
US8058172B2 (en) 2011-11-15
TW200621965A (en) 2006-07-01
JP4027929B2 (ja) 2007-12-26

Similar Documents

Publication Publication Date Title
US8058172B2 (en) Polishing process of a semiconductor substrate
TWI343944B (en) Cmp slurry, preparation method thereof and method of polishing substrate using the same
EP3055376B1 (en) Mixed abrasive polishing compositions
TWI285668B (en) Semiconductor abrasive, process for producing the same and method of polishing
US10414947B2 (en) Polishing composition containing ceria particles and method of use
CN106661429B (zh) 抛光浆料组合物
JP7766391B2 (ja) 研磨用組成物
TWI384058B (zh) 半導體基板用研磨液組合物
US20150175846A1 (en) Manufacturing method of polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
KR101396252B1 (ko) 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
JP5105869B2 (ja) 研磨液組成物
JP3926293B2 (ja) 研磨液組成物
KR101613359B1 (ko) 화학적 기계적 연마용 나노 세리아 슬러리 조성물 및 이의 제조방법
JP2006173411A (ja) 半導体基板用研磨液組成物
JP2000243733A (ja) 素子分離形成方法
KR102533083B1 (ko) 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물
JP2007227943A (ja) 半導体基板用研磨液組成物
JP2004186350A (ja) Ｃｍｐプロセス用研磨組成物
JP2006287051A (ja) 半導体基板研磨液組成物用添加剤
JP2015120845A (ja) 研磨剤の製造方法、研磨方法および半導体集積回路装置の製造方法
JP2007073596A (ja) 研磨剤、その製造方法、研磨方法および半導体集積回路装置の製造方法
JP2007134696A (ja) 半導体基板用研磨液組成物
TW201605731A (zh) 研磨粒及其製造方法、研漿的製造方法、研磨液及其製造方法以及研磨方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees