JP4018309B2 - 回路パラメータ抽出方法、半導体集積回路の設計方法および装置 - Google Patents

回路パラメータ抽出方法、半導体集積回路の設計方法および装置 Download PDF

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JP4018309B2
JP4018309B2 JP2000035267A JP2000035267A JP4018309B2 JP 4018309 B2 JP4018309 B2 JP 4018309B2 JP 2000035267 A JP2000035267 A JP 2000035267A JP 2000035267 A JP2000035267 A JP 2000035267A JP 4018309 B2 JP4018309 B2 JP 4018309B2
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JP2001230323A5 (enExample
JP2001230323A (ja
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聡 石倉
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2000035267A 2000-02-14 2000-02-14 回路パラメータ抽出方法、半導体集積回路の設計方法および装置 Expired - Fee Related JP4018309B2 (ja)

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JP2000035267A JP4018309B2 (ja) 2000-02-14 2000-02-14 回路パラメータ抽出方法、半導体集積回路の設計方法および装置

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JP2000035267A JP4018309B2 (ja) 2000-02-14 2000-02-14 回路パラメータ抽出方法、半導体集積回路の設計方法および装置

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JP2005116149A Division JP2005294852A (ja) 2005-04-13 2005-04-13 回路パラメータ抽出方法、半導体集積回路の設計方法および装置

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JP2001230323A JP2001230323A (ja) 2001-08-24
JP2001230323A5 JP2001230323A5 (enExample) 2005-09-22
JP4018309B2 true JP4018309B2 (ja) 2007-12-05

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Families Citing this family (24)

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Publication number Priority date Publication date Assignee Title
JP4497791B2 (ja) * 2002-05-09 2010-07-07 株式会社ルネサステクノロジ 半導体集積回路
JP2004022823A (ja) 2002-06-17 2004-01-22 Fujitsu Ltd シミュレーション方法及び装置並びにコンピュータプログラム
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4244771B2 (ja) * 2003-05-29 2009-03-25 パナソニック株式会社 フォーカスずれ量の測定方法および露光方法
TWI511179B (zh) 2003-10-28 2015-12-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI512335B (zh) 2003-11-20 2015-12-11 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
TWI494972B (zh) 2004-02-06 2015-08-01 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
JP4509703B2 (ja) 2004-09-01 2010-07-21 富士通株式会社 配線容量算出装置、配線容量算出方法および配線容量算出プログラム
KR101524964B1 (ko) 2005-05-12 2015-06-01 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
WO2006127408A2 (en) * 2005-05-20 2006-11-30 Cadence Design Systems, Inc. Method and system for increased accuracy for extraction of electrical parameters
JP4718914B2 (ja) 2005-06-28 2011-07-06 株式会社東芝 半導体集積回路の設計支援システム、半導体集積回路の設計方法、半導体集積回路の設計支援プログラム、半導体集積回路の製造方法
TW200721260A (en) * 2005-11-16 2007-06-01 Nikon Corp Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
US7713889B2 (en) 2005-11-16 2010-05-11 Nikon Corporation Substrate processing method, photomask manufacturing method, photomask, and device manufacturing method
JP4627268B2 (ja) 2006-02-21 2011-02-09 富士通株式会社 ３次元デバイスシミュレーションプログラムおよび３次元デバイスシミュレーションシステム
JP5340534B2 (ja) * 2006-11-28 2013-11-13 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路のためのマスク・レイアウト設計方法およびプログラムならびに集積回路のマスク・レイアウトの最適化方法
JP4380729B2 (ja) 2007-05-24 2009-12-09 ソニー株式会社 パターン設計方法、パターン設計プログラムおよびパターン設計装置
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP2009217366A (ja) * 2008-03-07 2009-09-24 Nec Electronics Corp 配線モデルライブラリ構築装置及び構築方法、レイアウトパラメータ抽出装置及び抽出方法
JP5011360B2 (ja) 2009-09-21 2012-08-29 株式会社東芝 フォトマスクの設計方法
CN102841500B (zh) * 2011-06-24 2015-04-15 台湾积体电路制造股份有限公司 用于双重图样化设计的掩模偏移感知rc提取
JP6491974B2 (ja) * 2015-07-17 2019-03-27 日立化成株式会社 露光データ補正装置、配線パターン形成システム、及び配線基板の製造方法
CN114707462B (zh) * 2022-04-18 2025-05-23 山东浪潮科学研究院有限公司 一种超导量子比特芯片制备方法及设备

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