JP4014891B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4014891B2
JP4014891B2 JP2002047944A JP2002047944A JP4014891B2 JP 4014891 B2 JP4014891 B2 JP 4014891B2 JP 2002047944 A JP2002047944 A JP 2002047944A JP 2002047944 A JP2002047944 A JP 2002047944A JP 4014891 B2 JP4014891 B2 JP 4014891B2
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JP
Japan
Prior art keywords
pattern
region
resist
material layer
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002047944A
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English (en)
Japanese (ja)
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JP2002359352A (ja
JP2002359352A5 (cg-RX-API-DMAC7.html
Inventor
圭 吉川
耕治 橋本
壮一 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002047944A priority Critical patent/JP4014891B2/ja
Priority to TW091105751A priority patent/TW567575B/zh
Priority to US10/107,298 priority patent/US7208423B2/en
Priority to KR10-2002-0017126A priority patent/KR100517100B1/ko
Priority to CNB021198128A priority patent/CN1278382C/zh
Publication of JP2002359352A publication Critical patent/JP2002359352A/ja
Priority to KR10-2005-0050488A priority patent/KR100525332B1/ko
Publication of JP2002359352A5 publication Critical patent/JP2002359352A5/ja
Priority to US11/643,907 priority patent/US8163611B2/en
Application granted granted Critical
Publication of JP4014891B2 publication Critical patent/JP4014891B2/ja
Priority to US12/724,019 priority patent/US7824996B2/en
Priority to US12/724,118 priority patent/US8183119B2/en
Priority to US12/724,115 priority patent/US8158527B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002047944A 2001-03-29 2002-02-25 半導体装置の製造方法 Expired - Fee Related JP4014891B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002047944A JP4014891B2 (ja) 2001-03-29 2002-02-25 半導体装置の製造方法
TW091105751A TW567575B (en) 2001-03-29 2002-03-25 Fabrication method of semiconductor device and semiconductor device
US10/107,298 US7208423B2 (en) 2001-03-29 2002-03-28 Semiconductor device fabrication method and semiconductor device
KR10-2002-0017126A KR100517100B1 (ko) 2001-03-29 2002-03-28 반도체 장치의 제조 방법 및 반도체 장치
CNB021198128A CN1278382C (zh) 2001-03-29 2002-03-29 半导体器件的制造方法和半导体器件
KR10-2005-0050488A KR100525332B1 (ko) 2001-03-29 2005-06-13 반도체 장치의 제조 방법
US11/643,907 US8163611B2 (en) 2001-03-29 2006-12-22 Semiconductor device fabrication method and semiconductor device
US12/724,019 US7824996B2 (en) 2001-03-29 2010-03-15 Semiconductor device fabrication method and semiconductor device
US12/724,118 US8183119B2 (en) 2001-03-29 2010-03-15 Semiconductor device fabrication method using multiple mask patterns
US12/724,115 US8158527B2 (en) 2001-04-20 2010-03-15 Semiconductor device fabrication method using multiple resist patterns

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-95038 2001-03-29
JP2001095038 2001-03-29
JP2002047944A JP4014891B2 (ja) 2001-03-29 2002-02-25 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002359352A JP2002359352A (ja) 2002-12-13
JP2002359352A5 JP2002359352A5 (cg-RX-API-DMAC7.html) 2006-03-16
JP4014891B2 true JP4014891B2 (ja) 2007-11-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002047944A Expired - Fee Related JP4014891B2 (ja) 2001-03-29 2002-02-25 半導体装置の製造方法

Country Status (1)

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JP (1) JP4014891B2 (cg-RX-API-DMAC7.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363390A (ja) 2003-06-05 2004-12-24 Toshiba Corp フォトマスクの補正方法、及び半導体装置の製造方法
US6972255B2 (en) * 2003-07-28 2005-12-06 Freescale Semiconductor, Inc. Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
KR100506460B1 (ko) * 2003-10-31 2005-08-05 주식회사 하이닉스반도체 반도체소자의 트랜지스터 및 그 형성방법
JP2005227666A (ja) 2004-02-16 2005-08-25 Toshiba Corp マスクデータ補正方法と半導体装置の製造方法
US20070184379A1 (en) * 2004-03-01 2007-08-09 Tokyo Electron Limited Peeling-off method and reworking method of resist film
US7132327B2 (en) * 2004-05-25 2006-11-07 Freescale Semiconductor, Inc. Decoupled complementary mask patterning transfer method
JP2006310376A (ja) * 2005-04-26 2006-11-09 Renesas Technology Corp 半導体集積回路装置の製造方法
JP5225676B2 (ja) * 2005-04-26 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法ならびに半導体製造用マスク、光近接処理方法
JP4987244B2 (ja) 2005-04-28 2012-07-25 株式会社東芝 半導体装置の製造方法
JP2007096099A (ja) * 2005-09-29 2007-04-12 Toshiba Corp 半導体装置の製造方法
JP2007149768A (ja) * 2005-11-24 2007-06-14 Nec Electronics Corp 半導体装置の製造方法
US7579278B2 (en) * 2006-03-23 2009-08-25 Micron Technology, Inc. Topography directed patterning
US7723009B2 (en) 2006-06-02 2010-05-25 Micron Technology, Inc. Topography based patterning
KR100780652B1 (ko) * 2006-12-27 2007-11-30 주식회사 하이닉스반도체 반도체 소자 제조방법
KR100875655B1 (ko) 2007-01-04 2008-12-26 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP2008181957A (ja) * 2007-01-23 2008-08-07 Toshiba Corp 半導体装置の製造方法
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP4560066B2 (ja) * 2007-06-11 2010-10-13 株式会社東芝 パターン形成方法
JP5818679B2 (ja) * 2011-12-27 2015-11-18 株式会社東芝 半導体装置の製造方法
JP5834909B2 (ja) 2011-12-28 2015-12-24 富士通セミコンダクター株式会社 半導体装置の製造方法

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Publication number Publication date
JP2002359352A (ja) 2002-12-13

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