JP4007581B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4007581B2
JP4007581B2 JP2002117801A JP2002117801A JP4007581B2 JP 4007581 B2 JP4007581 B2 JP 4007581B2 JP 2002117801 A JP2002117801 A JP 2002117801A JP 2002117801 A JP2002117801 A JP 2002117801A JP 4007581 B2 JP4007581 B2 JP 4007581B2
Authority
JP
Japan
Prior art keywords
group
substituent
acid
atom
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002117801A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003316004A5 (enExample
JP2003316004A (ja
Inventor
知也 佐々木
一良 水谷
慎一 漢那
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002117801A priority Critical patent/JP4007581B2/ja
Priority to US10/417,209 priority patent/US7163776B2/en
Priority to KR1020030024905A priority patent/KR100978026B1/ko
Publication of JP2003316004A publication Critical patent/JP2003316004A/ja
Publication of JP2003316004A5 publication Critical patent/JP2003316004A5/ja
Application granted granted Critical
Publication of JP4007581B2 publication Critical patent/JP4007581B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002117801A 2002-04-19 2002-04-19 ポジ型レジスト組成物 Expired - Lifetime JP4007581B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002117801A JP4007581B2 (ja) 2002-04-19 2002-04-19 ポジ型レジスト組成物
US10/417,209 US7163776B2 (en) 2002-04-19 2003-04-17 Positive-working resist composition
KR1020030024905A KR100978026B1 (ko) 2002-04-19 2003-04-19 포지티브 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002117801A JP4007581B2 (ja) 2002-04-19 2002-04-19 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003316004A JP2003316004A (ja) 2003-11-06
JP2003316004A5 JP2003316004A5 (enExample) 2005-09-22
JP4007581B2 true JP4007581B2 (ja) 2007-11-14

Family

ID=29534892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002117801A Expired - Lifetime JP4007581B2 (ja) 2002-04-19 2002-04-19 ポジ型レジスト組成物

Country Status (3)

Country Link
US (1) US7163776B2 (enExample)
JP (1) JP4007581B2 (enExample)
KR (1) KR100978026B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830871B2 (en) * 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
US7256316B2 (en) 2002-11-05 2007-08-14 Central Glass Company, Limited Fluorine-containing vinyl ethers, their polymers, and resist compositions using such polymers
US7150957B2 (en) * 2003-04-25 2006-12-19 International Business Machines Corporation Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
JP2005035920A (ja) * 2003-07-14 2005-02-10 Daicel Chem Ind Ltd 重合性アダマンタン誘導体とその製造法、及び高分子化合物
AU2003286758A1 (en) 2003-07-17 2005-03-07 Honeywell International Inc Planarization films for advanced microelectronic applications and devices and methods of production thereof
JP4639062B2 (ja) 2003-11-21 2011-02-23 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7393627B2 (en) 2004-03-16 2008-07-01 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS)
JP2005275283A (ja) * 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd 電子線、ｅｕｖ光又はｘ線用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4617112B2 (ja) * 2004-08-03 2011-01-19 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
WO2007124092A2 (en) * 2006-04-21 2007-11-01 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
KR20100122908A (ko) * 2008-02-22 2010-11-23 이데미쓰 고산 가부시키가이샤 지환 구조 함유 화합물, (메트)아크릴산에스테르류 및 그 제조 방법
US8163461B2 (en) * 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
KR101976210B1 (ko) * 2012-09-10 2019-05-07 롬엔드하스전자재료코리아유한회사 포지티브형 고감도 감광성 수지 조성물 및 이를 이용한 절연막

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3995369B2 (ja) * 1998-12-07 2007-10-24 富士フイルム株式会社 ポジ型フォトレジスト組成物
DE69817687T2 (de) * 1997-06-24 2004-07-08 Fuji Photo Film Co., Ltd., Minami-Ashigara Positiv-Fotoresist-Zusammensetzung
EP1131677B1 (en) 1998-09-23 2005-08-03 E.I. Dupont De Nemours And Company Photoresists, polymers and processes for microlithography
JP2001328964A (ja) * 2000-05-19 2001-11-27 Tokyo Ohka Kogyo Co Ltd 新規多環式不飽和炭化水素誘導体及びその製造方法
JP2001350264A (ja) * 2000-06-09 2001-12-21 Asahi Glass Co Ltd レジスト組成物
TWI226973B (en) * 2001-03-19 2005-01-21 Fuji Photo Film Co Ltd Positive resist composition
JP3876968B2 (ja) * 2001-04-26 2007-02-07 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
KR100863984B1 (ko) * 2001-07-03 2008-10-16 후지필름 가부시키가이샤 포지티브 레지스트 조성물
JP2003295442A (ja) * 2002-04-03 2003-10-15 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Also Published As

Publication number Publication date
US7163776B2 (en) 2007-01-16
US20030219679A1 (en) 2003-11-27
KR20040002498A (ko) 2004-01-07
JP2003316004A (ja) 2003-11-06
KR100978026B1 (ko) 2010-08-25

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