KR100978026B1 - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물 Download PDF

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Publication number
KR100978026B1
KR100978026B1 KR1020030024905A KR20030024905A KR100978026B1 KR 100978026 B1 KR100978026 B1 KR 100978026B1 KR 1020030024905 A KR1020030024905 A KR 1020030024905A KR 20030024905 A KR20030024905 A KR 20030024905A KR 100978026 B1 KR100978026 B1 KR 100978026B1
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KR
South Korea
Prior art keywords
group
substituent
atom
acid
fluorine
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KR1020030024905A
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English (en)
Korean (ko)
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KR20040002498A (ko
Inventor
사사키도모야
미즈타니가즈요시
간나신이치
Original Assignee
후지필름 가부시키가이샤
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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020030024905A 2002-04-19 2003-04-19 포지티브 레지스트 조성물 Expired - Lifetime KR100978026B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002117801A JP4007581B2 (ja) 2002-04-19 2002-04-19 ポジ型レジスト組成物
JPJP-P-2002-00117801 2002-04-19

Publications (2)

Publication Number Publication Date
KR20040002498A KR20040002498A (ko) 2004-01-07
KR100978026B1 true KR100978026B1 (ko) 2010-08-25

Family

ID=29534892

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030024905A Expired - Lifetime KR100978026B1 (ko) 2002-04-19 2003-04-19 포지티브 레지스트 조성물

Country Status (3)

Country Link
US (1) US7163776B2 (enExample)
JP (1) JP4007581B2 (enExample)
KR (1) KR100978026B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830871B2 (en) * 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
US7256316B2 (en) 2002-11-05 2007-08-14 Central Glass Company, Limited Fluorine-containing vinyl ethers, their polymers, and resist compositions using such polymers
US7150957B2 (en) * 2003-04-25 2006-12-19 International Business Machines Corporation Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
JP2005035920A (ja) * 2003-07-14 2005-02-10 Daicel Chem Ind Ltd 重合性アダマンタン誘導体とその製造法、及び高分子化合物
AU2003286758A1 (en) 2003-07-17 2005-03-07 Honeywell International Inc Planarization films for advanced microelectronic applications and devices and methods of production thereof
JP4639062B2 (ja) 2003-11-21 2011-02-23 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7393627B2 (en) 2004-03-16 2008-07-01 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS)
JP2005275283A (ja) * 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd 電子線、euv光又はx線用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4617112B2 (ja) * 2004-08-03 2011-01-19 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
WO2007124092A2 (en) * 2006-04-21 2007-11-01 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
KR20100122908A (ko) * 2008-02-22 2010-11-23 이데미쓰 고산 가부시키가이샤 지환 구조 함유 화합물, (메트)아크릴산에스테르류 및 그 제조 방법
US8163461B2 (en) * 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
KR101976210B1 (ko) * 2012-09-10 2019-05-07 롬엔드하스전자재료코리아유한회사 포지티브형 고감도 감광성 수지 조성물 및 이를 이용한 절연막

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000231194A (ja) * 1998-12-07 2000-08-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2001328964A (ja) * 2000-05-19 2001-11-27 Tokyo Ohka Kogyo Co Ltd 新規多環式不飽和炭化水素誘導体及びその製造方法
JP2001350264A (ja) * 2000-06-09 2001-12-21 Asahi Glass Co Ltd レジスト組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69817687T2 (de) * 1997-06-24 2004-07-08 Fuji Photo Film Co., Ltd., Minami-Ashigara Positiv-Fotoresist-Zusammensetzung
EP1131677B1 (en) 1998-09-23 2005-08-03 E.I. Dupont De Nemours And Company Photoresists, polymers and processes for microlithography
TWI226973B (en) * 2001-03-19 2005-01-21 Fuji Photo Film Co Ltd Positive resist composition
JP3876968B2 (ja) * 2001-04-26 2007-02-07 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
KR100863984B1 (ko) * 2001-07-03 2008-10-16 후지필름 가부시키가이샤 포지티브 레지스트 조성물
JP2003295442A (ja) * 2002-04-03 2003-10-15 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000231194A (ja) * 1998-12-07 2000-08-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2001328964A (ja) * 2000-05-19 2001-11-27 Tokyo Ohka Kogyo Co Ltd 新規多環式不飽和炭化水素誘導体及びその製造方法
JP2001350264A (ja) * 2000-06-09 2001-12-21 Asahi Glass Co Ltd レジスト組成物

Also Published As

Publication number Publication date
US7163776B2 (en) 2007-01-16
US20030219679A1 (en) 2003-11-27
KR20040002498A (ko) 2004-01-07
JP2003316004A (ja) 2003-11-06
JP4007581B2 (ja) 2007-11-14

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