JP3996856B2 - 試料作製装置と試料作製方法 - Google Patents
試料作製装置と試料作製方法 Download PDFInfo
- Publication number
- JP3996856B2 JP3996856B2 JP2003006505A JP2003006505A JP3996856B2 JP 3996856 B2 JP3996856 B2 JP 3996856B2 JP 2003006505 A JP2003006505 A JP 2003006505A JP 2003006505 A JP2003006505 A JP 2003006505A JP 3996856 B2 JP3996856 B2 JP 3996856B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- probe
- sample preparation
- fine line
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003006505A JP3996856B2 (ja) | 2003-01-15 | 2003-01-15 | 試料作製装置と試料作製方法 |
| US10/603,720 US6894287B2 (en) | 2003-01-15 | 2003-06-26 | Microfabrication apparatus and microfabrication method |
| FR0308792A FR2849955B1 (fr) | 2003-01-15 | 2003-07-18 | Dispositif de micro-fabrication et procede de micro-fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003006505A JP3996856B2 (ja) | 2003-01-15 | 2003-01-15 | 試料作製装置と試料作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004219236A JP2004219236A (ja) | 2004-08-05 |
| JP2004219236A5 JP2004219236A5 (enExample) | 2006-01-19 |
| JP3996856B2 true JP3996856B2 (ja) | 2007-10-24 |
Family
ID=32588506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003006505A Expired - Fee Related JP3996856B2 (ja) | 2003-01-15 | 2003-01-15 | 試料作製装置と試料作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6894287B2 (enExample) |
| JP (1) | JP3996856B2 (enExample) |
| FR (1) | FR2849955B1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7356900B2 (en) * | 2003-10-27 | 2008-04-15 | Sii Nanotechnology Inc. | Manipulator needle portion repairing method |
| US9423693B1 (en) | 2005-05-10 | 2016-08-23 | Victor B. Kley | In-plane scanning probe microscopy tips and tools for wafers and substrates with diverse designs on one wafer or substrate |
| US7571638B1 (en) * | 2005-05-10 | 2009-08-11 | Kley Victor B | Tool tips with scanning probe microscopy and/or atomic force microscopy applications |
| DE102008042179B9 (de) * | 2008-09-17 | 2013-10-10 | Carl Zeiss Microscopy Gmbh | Verfahren zur Analyse einer Probe |
| JP5152111B2 (ja) * | 2009-06-22 | 2013-02-27 | 新日鐵住金株式会社 | 集束イオンビーム加工装置用プローブ、プローブ装置、及びプローブの製造方法 |
| EP2560186A4 (en) * | 2010-04-16 | 2014-12-24 | Hitachi High Tech Corp | ION BEAM DEVICE AND ION BEAM PROCESSING METHOD |
| US9778572B1 (en) | 2013-03-15 | 2017-10-03 | Victor B. Kley | In-plane scanning probe microscopy tips and tools for wafers and substrates with diverse designs on one wafer or substrate |
| CN208969129U (zh) * | 2018-09-29 | 2019-06-11 | Fei公司 | 晶片、微操纵器、用于制备微操纵器的系统 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999005506A1 (fr) * | 1997-07-22 | 1999-02-04 | Hitachi, Ltd. | Procede et dispositif de preparation d'echantillons |
| JP4200665B2 (ja) * | 2001-05-08 | 2008-12-24 | 株式会社日立製作所 | 加工装置 |
-
2003
- 2003-01-15 JP JP2003006505A patent/JP3996856B2/ja not_active Expired - Fee Related
- 2003-06-26 US US10/603,720 patent/US6894287B2/en not_active Expired - Fee Related
- 2003-07-18 FR FR0308792A patent/FR2849955B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2849955B1 (fr) | 2015-05-15 |
| US6894287B2 (en) | 2005-05-17 |
| FR2849955A1 (fr) | 2004-07-16 |
| JP2004219236A (ja) | 2004-08-05 |
| US20040135096A1 (en) | 2004-07-15 |
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