JP3992993B2 - ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物 - Google Patents

ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物 Download PDF

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Publication number
JP3992993B2
JP3992993B2 JP2002043492A JP2002043492A JP3992993B2 JP 3992993 B2 JP3992993 B2 JP 3992993B2 JP 2002043492 A JP2002043492 A JP 2002043492A JP 2002043492 A JP2002043492 A JP 2002043492A JP 3992993 B2 JP3992993 B2 JP 3992993B2
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JP2002323768A (ja
JP2002323768A5 (enExample
Inventor
一良 水谷
表 高橋
亨 藤森
浩司 白川
昭一郎 安波
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Fujifilm Corp
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Fujifilm Corp
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  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002043492A 2001-02-21 2002-02-20 ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物 Expired - Lifetime JP3992993B2 (ja)

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JP2002043492A JP3992993B2 (ja) 2001-02-21 2002-02-20 ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物

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JP2001045214 2001-02-21
JP2001-45214 2001-02-21
JP2002043492A JP3992993B2 (ja) 2001-02-21 2002-02-20 ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物

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JP2002323768A JP2002323768A (ja) 2002-11-08
JP2002323768A5 JP2002323768A5 (enExample) 2005-04-07
JP3992993B2 true JP3992993B2 (ja) 2007-10-17

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003289430A1 (en) 2002-12-26 2004-07-22 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
JP4121396B2 (ja) 2003-03-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
EP1465010B1 (en) 2003-03-31 2009-10-21 FUJIFILM Corporation Positive resist composition
JP4115322B2 (ja) 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP2004333548A (ja) 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP4149306B2 (ja) 2003-04-30 2008-09-10 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP3981830B2 (ja) 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7250246B2 (en) 2004-01-26 2007-07-31 Fujifilm Corporation Positive resist composition and pattern formation method using the same
KR101129515B1 (ko) 2004-02-20 2012-03-30 후지필름 가부시키가이샤 포지티브 레지스트 조성물 및 그것을 사용한 패턴형성방법
US7504193B2 (en) 2004-09-02 2009-03-17 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP4368282B2 (ja) 2004-09-24 2009-11-18 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7851130B2 (en) 2006-09-19 2010-12-14 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition
WO2009022681A1 (ja) 2007-08-10 2009-02-19 Fujifilm Corporation ポジ型レジスト組成物、該組成物を用いたパターン形成方法及び該組成物に用いられる化合物

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