JP3992432B2 - 平版投影装置用の照射源 - Google Patents

平版投影装置用の照射源 Download PDF

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Publication number
JP3992432B2
JP3992432B2 JP2000404229A JP2000404229A JP3992432B2 JP 3992432 B2 JP3992432 B2 JP 3992432B2 JP 2000404229 A JP2000404229 A JP 2000404229A JP 2000404229 A JP2000404229 A JP 2000404229A JP 3992432 B2 JP3992432 B2 JP 3992432B2
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Japan
Prior art keywords
irradiation source
plasma
radiation
source
substrate
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Expired - Lifetime
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JP2000404229A
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English (en)
Japanese (ja)
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JP2001311799A (ja
JP2001311799A5 (enExample
Inventor
ヘンリク、フィードロウィクズ
フレデリク、ビユケルク
コルネラ、デ ブルイユン コルネリス
アンドルゼユ、バルトニク
ニコラエビッチ、コシェレブ コンスタンチン
イエブゲニエビッチ、バニネ バディム
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エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2001311799A publication Critical patent/JP2001311799A/ja
Publication of JP2001311799A5 publication Critical patent/JP2001311799A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
  • X-Ray Techniques (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2000404229A 1999-12-17 2000-12-14 平版投影装置用の照射源 Expired - Lifetime JP3992432B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US466217 1999-12-17
US09/466,217 US6469310B1 (en) 1999-12-17 1999-12-17 Radiation source for extreme ultraviolet radiation, e.g. for use in lithographic projection apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007155698A Division JP4195071B2 (ja) 1999-12-17 2007-06-12 平版投影装置用の照射源

Publications (3)

Publication Number Publication Date
JP2001311799A JP2001311799A (ja) 2001-11-09
JP2001311799A5 JP2001311799A5 (enExample) 2007-07-26
JP3992432B2 true JP3992432B2 (ja) 2007-10-17

Family

ID=23850950

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000404229A Expired - Lifetime JP3992432B2 (ja) 1999-12-17 2000-12-14 平版投影装置用の照射源
JP2007155698A Expired - Lifetime JP4195071B2 (ja) 1999-12-17 2007-06-12 平版投影装置用の照射源

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007155698A Expired - Lifetime JP4195071B2 (ja) 1999-12-17 2007-06-12 平版投影装置用の照射源

Country Status (2)

Country Link
US (1) US6469310B1 (enExample)
JP (2) JP3992432B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661018B1 (en) * 2000-04-25 2003-12-09 Northrop Grumman Corporation Shroud nozzle for gas jet control in an extreme ultraviolet light source
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6711233B2 (en) * 2000-07-28 2004-03-23 Jettec Ab Method and apparatus for generating X-ray or EUV radiation
US6912267B2 (en) * 2002-11-06 2005-06-28 University Of Central Florida Research Foundation Erosion reduction for EUV laser produced plasma target sources
US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10306668B4 (de) * 2003-02-13 2009-12-10 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas
EP1779089A4 (en) * 2004-07-28 2010-03-24 Univ Community College Sys Nev ELECTRODE-FREE EXTREME UV DISCHARGE LIGHT SOURCE
JP5004473B2 (ja) * 2006-01-16 2012-08-22 学校法人日本大学 プラズマ発生装置
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
US7763871B2 (en) * 2008-04-02 2010-07-27 Asml Netherlands B.V. Radiation source
US8901521B2 (en) * 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
KR20100102682A (ko) * 2007-12-27 2010-09-24 에이에스엠엘 네델란즈 비.브이. 극자외 방사선 소스 및 극자외 방사선을 생성하는 방법
CN102484938B (zh) * 2009-09-01 2014-12-10 株式会社Ihi 等离子体光源
JP5212917B2 (ja) * 2009-09-01 2013-06-19 株式会社Ｉｈｉ プラズマ光源
JP5212918B2 (ja) * 2009-09-01 2013-06-19 株式会社Ｉｈｉ プラズマ光源
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
KR20140036538A (ko) * 2012-09-17 2014-03-26 삼성전자주식회사 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스
KR102115543B1 (ko) * 2013-04-26 2020-05-26 삼성전자주식회사 극자외선 광원 장치
US9585236B2 (en) 2013-05-03 2017-02-28 Media Lario Srl Sn vapor EUV LLP source system for EUV lithography

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494043A (en) 1981-07-02 1985-01-15 Physics International Company Imploding plasma device
JPS60175351A (ja) 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法
EP0201034B1 (en) 1985-04-30 1993-09-01 Nippon Telegraph and Telephone Corporation X-ray source
US4663567A (en) 1985-10-28 1987-05-05 Physics International Company Generation of stable linear plasmas
US5577092A (en) 1995-01-25 1996-11-19 Kublak; Glenn D. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources
DE69701934T2 (de) * 1996-02-15 2000-11-30 Koninklijke Philips Electronics N.V., Eindhoven Methode zur bestimmung der strahlungsmenge in einem lithographischen gerät; test-maske und gerät ihrer durchführung
SE510133C2 (sv) * 1996-04-25 1999-04-19 Jettec Ab Laser-plasma röntgenkälla utnyttjande vätskor som strålmål
US6031241A (en) 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5763930A (en) 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
US6075838A (en) * 1998-03-18 2000-06-13 Plex Llc Z-pinch soft x-ray source using diluent gas
US6105885A (en) 1998-04-03 2000-08-22 Advanced Energy Systems, Inc. Fluid nozzle system and method in an emitted energy system for photolithography
US6065203A (en) 1998-04-03 2000-05-23 Advanced Energy Systems, Inc. Method of manufacturing very small diameter deep passages

Also Published As

Publication number Publication date
JP2007329484A (ja) 2007-12-20
JP2001311799A (ja) 2001-11-09
JP4195071B2 (ja) 2008-12-10
US6469310B1 (en) 2002-10-22

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