JP3980960B2 - 半導体装置及び発光装置の作製方法 - Google Patents

半導体装置及び発光装置の作製方法 Download PDF

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Publication number
JP3980960B2
JP3980960B2 JP2002219577A JP2002219577A JP3980960B2 JP 3980960 B2 JP3980960 B2 JP 3980960B2 JP 2002219577 A JP2002219577 A JP 2002219577A JP 2002219577 A JP2002219577 A JP 2002219577A JP 3980960 B2 JP3980960 B2 JP 3980960B2
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Japan
Prior art keywords
insulating film
metal wiring
film
pixel electrode
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002219577A
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English (en)
Japanese (ja)
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JP2004061825A (ja
JP2004061825A5 (enExample
JP2004061825A6 (ja
Inventor
真之 坂倉
智史 村上
裕和 山形
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2004061825A publication Critical patent/JP2004061825A/ja
Publication of JP2004061825A5 publication Critical patent/JP2004061825A5/ja
Publication of JP2004061825A6 publication Critical patent/JP2004061825A6/ja
Application granted granted Critical
Publication of JP3980960B2 publication Critical patent/JP3980960B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2002219577A 2001-07-27 2002-07-29 半導体装置及び発光装置の作製方法 Expired - Fee Related JP3980960B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001228164 2001-07-27
JP2001228164 2001-07-27

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002219269A Division JP3792621B2 (ja) 2001-07-27 2002-07-29 半導体装置及び発光装置

Publications (4)

Publication Number Publication Date
JP2004061825A JP2004061825A (ja) 2004-02-26
JP2004061825A5 JP2004061825A5 (enExample) 2005-10-27
JP2004061825A6 JP2004061825A6 (ja) 2006-10-26
JP3980960B2 true JP3980960B2 (ja) 2007-09-26

Family

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Family Applications (2)

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JP2002219269A Expired - Fee Related JP3792621B2 (ja) 2001-07-27 2002-07-29 半導体装置及び発光装置
JP2002219577A Expired - Fee Related JP3980960B2 (ja) 2001-07-27 2002-07-29 半導体装置及び発光装置の作製方法

Family Applications Before (1)

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JP2002219269A Expired - Fee Related JP3792621B2 (ja) 2001-07-27 2002-07-29 半導体装置及び発光装置

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US (2) US6686605B2 (enExample)
JP (2) JP3792621B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3904512B2 (ja) * 2002-12-24 2007-04-11 シャープ株式会社 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器
US20050074914A1 (en) * 2003-10-06 2005-04-07 Toppoly Optoelectronics Corp. Semiconductor device and method of fabrication the same
KR100699998B1 (ko) * 2004-09-23 2007-03-26 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그의 제조 방법
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
JP6818514B2 (ja) * 2016-11-01 2021-01-20 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0554060A3 (en) 1992-01-31 1993-12-01 Canon Kk Liquid crystal display apparatus
JPH05210116A (ja) * 1992-01-31 1993-08-20 Canon Inc 液晶表示装置
JPH06230425A (ja) * 1993-02-03 1994-08-19 Sanyo Electric Co Ltd 液晶表示装置及びその製造方法
JPH0896959A (ja) 1994-09-27 1996-04-12 Sumitomo Electric Ind Ltd 有機エレクトロルミネッセンス素子
KR100359795B1 (ko) * 1995-08-22 2003-01-14 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
JPH0963770A (ja) 1995-08-24 1997-03-07 Kemipuro Kasei Kk 単層型白色発光有機ｅｌ素子
JPH1138439A (ja) * 1997-07-16 1999-02-12 Toshiba Corp アクティブマトリクス基板及びその製造方法並びにアクティブマトリクス型液晶表示装置
JPH1138440A (ja) * 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2000002889A (ja) * 1998-06-16 2000-01-07 Mitsubishi Electric Corp 液晶表示装置
JP4718677B2 (ja) * 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

Also Published As

Publication number Publication date
JP2004061825A (ja) 2004-02-26
JP3792621B2 (ja) 2006-07-05
US6686605B2 (en) 2004-02-03
US20040113150A1 (en) 2004-06-17
US6929986B2 (en) 2005-08-16
JP2003157027A (ja) 2003-05-30
US20030038321A1 (en) 2003-02-27

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