JP3970729B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP3970729B2 JP3970729B2 JP2002275389A JP2002275389A JP3970729B2 JP 3970729 B2 JP3970729 B2 JP 3970729B2 JP 2002275389 A JP2002275389 A JP 2002275389A JP 2002275389 A JP2002275389 A JP 2002275389A JP 3970729 B2 JP3970729 B2 JP 3970729B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- silicon germanium
- germanium film
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 134
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 74
- 229910052710 silicon Inorganic materials 0.000 claims description 74
- 239000010703 silicon Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 56
- 229910052732 germanium Inorganic materials 0.000 claims description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 30
- 238000009826 distribution Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 14
- 239000007789 gas Substances 0.000 description 15
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052986 germanium hydride Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002275389A JP3970729B2 (ja) | 2002-09-20 | 2002-09-20 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002275389A JP3970729B2 (ja) | 2002-09-20 | 2002-09-20 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004111821A JP2004111821A (ja) | 2004-04-08 |
| JP2004111821A5 JP2004111821A5 (enrdf_load_stackoverflow) | 2005-07-14 |
| JP3970729B2 true JP3970729B2 (ja) | 2007-09-05 |
Family
ID=32271604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002275389A Expired - Fee Related JP3970729B2 (ja) | 2002-09-20 | 2002-09-20 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3970729B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405465B2 (en) * | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
| JP2007005723A (ja) * | 2005-06-27 | 2007-01-11 | Toshiba Corp | 半導体装置 |
| JP5439147B2 (ja) * | 2009-12-04 | 2014-03-12 | 株式会社東芝 | 抵抗変化メモリ |
| CN115642085A (zh) * | 2022-09-30 | 2023-01-24 | 扬州杰利半导体有限公司 | 一种高电阻率阱扩散低压二极管及制备方法 |
-
2002
- 2002-09-20 JP JP2002275389A patent/JP3970729B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004111821A (ja) | 2004-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6362065B1 (en) | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer | |
| US8258032B2 (en) | Power semiconductor devices and methods for manufacturing the same | |
| JP2611640B2 (ja) | ヘテロ接合バイポーラトランジスタ | |
| JP6121501B2 (ja) | 半導体ウエハーの製造方法と低格子間酸素濃度を有する半導体デバイス | |
| CN107180765B (zh) | 形成半导体器件的方法 | |
| JP2004520711A (ja) | シリコン・ゲルマニウム・バイポーラ・トランジスタ | |
| KR101876579B1 (ko) | 전력용 반도체 소자 및 그 소자의 제조 방법 | |
| JP5282818B2 (ja) | ダイオードの製造方法、及び、ダイオード | |
| JP2654055B2 (ja) | 半導体基材の製造方法 | |
| JP3970729B2 (ja) | 半導体装置およびその製造方法 | |
| JP3113156B2 (ja) | 半導体基板の製造方法 | |
| JP3546169B2 (ja) | 半導体装置及びその製造方法 | |
| JP4075218B2 (ja) | ヘテロ接合型半導体装置 | |
| JPH04179235A (ja) | ヘテロ接合バイポーラトランジスタ | |
| EP1008187B1 (en) | Semiconductor device having a rectifying junction and method of manufacturing same | |
| JP2010278259A (ja) | 半導体装置、及び、半導体装置の製造方法 | |
| JP2008153454A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JPH11274521A (ja) | 半導体装置及びその製造方法 | |
| US20150311327A1 (en) | Itc-igbt and manufacturing method therefor | |
| JP2869653B2 (ja) | 半導体装置およびその製造方法 | |
| JP4506035B2 (ja) | 半導体基板と電界効果型トランジスタ並びにＳｉＧｅ層の形成方法及びこれを用いた歪みＳｉ層の形成方法と電界効果型トランジスタの製造方法 | |
| JPH07115211A (ja) | ショットキ半導体装置 | |
| JP2646856B2 (ja) | バイポーラトランジスタの製造方法 | |
| JP2000332265A (ja) | ダイオードとその製造方法 | |
| CN116387151A (zh) | 快恢复二极管的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041122 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041122 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070228 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070306 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070419 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070515 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070606 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110615 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110615 Year of fee payment: 4 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110615 Year of fee payment: 4 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |