JP2004111821A5 - - Google Patents
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- Publication number
- JP2004111821A5 JP2004111821A5 JP2002275389A JP2002275389A JP2004111821A5 JP 2004111821 A5 JP2004111821 A5 JP 2004111821A5 JP 2002275389 A JP2002275389 A JP 2002275389A JP 2002275389 A JP2002275389 A JP 2002275389A JP 2004111821 A5 JP2004111821 A5 JP 2004111821A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductivity type
- silicon
- silicon germanium
- germanium film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 38
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 38
- 239000004065 semiconductor Substances 0.000 claims 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 18
- 229910052710 silicon Inorganic materials 0.000 claims 18
- 239000010703 silicon Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 13
- 239000012535 impurity Substances 0.000 claims 12
- 229910052732 germanium Inorganic materials 0.000 claims 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 8
- 230000007423 decrease Effects 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002275389A JP3970729B2 (ja) | 2002-09-20 | 2002-09-20 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002275389A JP3970729B2 (ja) | 2002-09-20 | 2002-09-20 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004111821A JP2004111821A (ja) | 2004-04-08 |
| JP2004111821A5 true JP2004111821A5 (enrdf_load_stackoverflow) | 2005-07-14 |
| JP3970729B2 JP3970729B2 (ja) | 2007-09-05 |
Family
ID=32271604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002275389A Expired - Fee Related JP3970729B2 (ja) | 2002-09-20 | 2002-09-20 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3970729B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405465B2 (en) * | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
| JP2007005723A (ja) * | 2005-06-27 | 2007-01-11 | Toshiba Corp | 半導体装置 |
| JP5439147B2 (ja) * | 2009-12-04 | 2014-03-12 | 株式会社東芝 | 抵抗変化メモリ |
| CN115642085A (zh) * | 2022-09-30 | 2023-01-24 | 扬州杰利半导体有限公司 | 一种高电阻率阱扩散低压二极管及制备方法 |
-
2002
- 2002-09-20 JP JP2002275389A patent/JP3970729B2/ja not_active Expired - Fee Related
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