JP3963624B2 - 遠紫外線露光用ポジ型フォトレジスト組成物 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3963624B2
JP3963624B2 JP36490499A JP36490499A JP3963624B2 JP 3963624 B2 JP3963624 B2 JP 3963624B2 JP 36490499 A JP36490499 A JP 36490499A JP 36490499 A JP36490499 A JP 36490499A JP 3963624 B2 JP3963624 B2 JP 3963624B2
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JP
Japan
Prior art keywords
group
resin
glycol monomethyl
propylene glycol
monomethyl ether
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP36490499A
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English (en)
Japanese (ja)
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JP2001183837A5 (enExample
JP2001183837A (ja
Inventor
文之 西山
亨 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP36490499A priority Critical patent/JP3963624B2/ja
Priority to TW089126979A priority patent/TWI237161B/zh
Priority to US09/742,368 priority patent/US6537718B2/en
Publication of JP2001183837A publication Critical patent/JP2001183837A/ja
Publication of JP2001183837A5 publication Critical patent/JP2001183837A5/ja
Application granted granted Critical
Publication of JP3963624B2 publication Critical patent/JP3963624B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP36490499A 1999-12-22 1999-12-22 遠紫外線露光用ポジ型フォトレジスト組成物 Expired - Lifetime JP3963624B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP36490499A JP3963624B2 (ja) 1999-12-22 1999-12-22 遠紫外線露光用ポジ型フォトレジスト組成物
TW089126979A TWI237161B (en) 1999-12-22 2000-12-16 Positive photoresist composition for exposure to far ultraviolet ray
US09/742,368 US6537718B2 (en) 1999-12-22 2000-12-22 Positive photoresist composition for exposure to far ultraviolet ray

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36490499A JP3963624B2 (ja) 1999-12-22 1999-12-22 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2001183837A JP2001183837A (ja) 2001-07-06
JP2001183837A5 JP2001183837A5 (enExample) 2005-07-14
JP3963624B2 true JP3963624B2 (ja) 2007-08-22

Family

ID=18482953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36490499A Expired - Lifetime JP3963624B2 (ja) 1999-12-22 1999-12-22 遠紫外線露光用ポジ型フォトレジスト組成物

Country Status (3)

Country Link
US (1) US6537718B2 (enExample)
JP (1) JP3963624B2 (enExample)
TW (1) TWI237161B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1201638B1 (en) * 1999-08-02 2004-06-23 Nippon Soda Co., Ltd. Photocurable composition containing iodonium salt compound
CN100470365C (zh) * 2001-01-12 2009-03-18 富士胶片株式会社 正型成像材料
KR100520163B1 (ko) * 2001-06-21 2005-10-10 주식회사 하이닉스반도체 니트로기를 포함하는 신규의 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물
US6949329B2 (en) * 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
JP3633595B2 (ja) * 2001-08-10 2005-03-30 富士通株式会社 レジストパターン膨潤化材料およびそれを用いた微小パターンの形成方法および半導体装置の製造方法
JP4025074B2 (ja) * 2001-09-19 2007-12-19 富士フイルム株式会社 ポジ型レジスト組成物
US7510822B2 (en) * 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
KR101036501B1 (ko) * 2002-11-22 2011-05-24 후지필름 가부시키가이샤 포지티브형 레지스트 조성물 및 그것을 사용한 패턴형성방법
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
EP1465010B1 (en) * 2003-03-31 2009-10-21 FUJIFILM Corporation Positive resist composition
WO2004104702A1 (ja) * 2003-05-20 2004-12-02 Tokyo Ohka Kogyo Co., Ltd. 化学増幅型ポジ型ホトレジスト組成物及びレジストパターン形成方法
JP4365236B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
JP4494061B2 (ja) 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP4684740B2 (ja) * 2005-05-19 2011-05-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2007101715A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp パターン形成方法及びそれに用いるレジスト組成物
KR101351311B1 (ko) * 2006-03-08 2014-01-14 주식회사 동진쎄미켐 감광성 수지 조성물
JP4954576B2 (ja) * 2006-03-15 2012-06-20 東京応化工業株式会社 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法
JP5177432B2 (ja) * 2008-02-21 2013-04-03 信越化学工業株式会社 パターン形成方法
US8753793B2 (en) 2009-01-15 2014-06-17 Daicel Chemical Industries, Ltd. Method for producing resin solution for photoresist, photoresist composition, and pattern-forming method
JP5177434B2 (ja) 2009-04-08 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5621755B2 (ja) * 2011-11-17 2014-11-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
KR102128536B1 (ko) * 2017-07-04 2020-06-30 주식회사 엘지화학 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
CH621416A5 (enExample) 1975-03-27 1981-01-30 Hoechst Ag
DE2718254C3 (de) 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0249139B2 (en) 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
US5580695A (en) * 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US6190833B1 (en) * 1997-03-30 2001-02-20 Jsr Corporation Radiation-sensitive resin composition
US6338931B1 (en) * 1999-08-16 2002-01-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process

Also Published As

Publication number Publication date
TWI237161B (en) 2005-08-01
JP2001183837A (ja) 2001-07-06
US20010008739A1 (en) 2001-07-19
US6537718B2 (en) 2003-03-25

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