JP3962465B2 - 半導体部材の製造方法 - Google Patents

半導体部材の製造方法 Download PDF

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Publication number
JP3962465B2
JP3962465B2 JP34640897A JP34640897A JP3962465B2 JP 3962465 B2 JP3962465 B2 JP 3962465B2 JP 34640897 A JP34640897 A JP 34640897A JP 34640897 A JP34640897 A JP 34640897A JP 3962465 B2 JP3962465 B2 JP 3962465B2
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Japan
Prior art keywords
layer
substrate
porous
film
single crystal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP34640897A
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English (en)
Japanese (ja)
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JPH10233352A (ja
JPH10233352A5 (enExample
Inventor
清文 坂口
憲二 山方
彰志 西田
隆夫 米原
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP34640897A priority Critical patent/JP3962465B2/ja
Publication of JPH10233352A publication Critical patent/JPH10233352A/ja
Publication of JPH10233352A5 publication Critical patent/JPH10233352A5/ja
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Publication of JP3962465B2 publication Critical patent/JP3962465B2/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP34640897A 1996-12-18 1997-12-16 半導体部材の製造方法 Expired - Fee Related JP3962465B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34640897A JP3962465B2 (ja) 1996-12-18 1997-12-16 半導体部材の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-354342 1996-12-18
JP35434296 1996-12-18
JP34640897A JP3962465B2 (ja) 1996-12-18 1997-12-16 半導体部材の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004314042A Division JP3927977B2 (ja) 1996-12-18 2004-10-28 半導体部材の製造方法

Publications (3)

Publication Number Publication Date
JPH10233352A JPH10233352A (ja) 1998-09-02
JPH10233352A5 JPH10233352A5 (enExample) 2005-07-07
JP3962465B2 true JP3962465B2 (ja) 2007-08-22

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Family Applications (1)

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JP34640897A Expired - Fee Related JP3962465B2 (ja) 1996-12-18 1997-12-16 半導体部材の製造方法

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JP (1) JP3962465B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349264A (ja) 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
US6468923B1 (en) 1999-03-26 2002-10-22 Canon Kabushiki Kaisha Method of producing semiconductor member
US6326279B1 (en) 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
FR2795866B1 (fr) * 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue
TW508690B (en) 1999-12-08 2002-11-01 Canon Kk Composite member separating method, thin film manufacturing method, and composite member separating apparatus
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
JP4061846B2 (ja) * 2001-01-23 2008-03-19 セイコーエプソン株式会社 積層体の製造方法及び半導体装置の製造方法
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
EP1363319B1 (en) 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
JP4151421B2 (ja) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
US6759277B1 (en) * 2003-02-27 2004-07-06 Sharp Laboratories Of America, Inc. Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates
EP1571705A3 (fr) * 2004-03-01 2006-01-04 S.O.I.Tec Silicon on Insulator Technologies Réalisation d'une entité en matériau semiconducteur sur substrat
JP5128781B2 (ja) * 2006-03-13 2013-01-23 信越化学工業株式会社 光電変換素子用基板の製造方法
JP5166745B2 (ja) * 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
JP5065748B2 (ja) * 2007-04-27 2012-11-07 信越化学工業株式会社 貼り合わせウエーハの製造方法
JP5498670B2 (ja) * 2007-07-13 2014-05-21 株式会社半導体エネルギー研究所 半導体基板の作製方法
SG170089A1 (en) 2007-10-29 2011-04-29 Semiconductor Energy Lab Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
EP2105972A3 (en) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US7947523B2 (en) * 2008-04-25 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
WO2009131115A1 (ja) * 2008-04-25 2009-10-29 株式会社アルバック 太陽電池の製造方法，太陽電池の製造装置，及び太陽電池
JP2010050356A (ja) * 2008-08-22 2010-03-04 Shin-Etsu Chemical Co Ltd ヘテロ接合太陽電池の製造方法及びヘテロ接合太陽電池
KR101156437B1 (ko) 2010-01-27 2012-07-03 삼성모바일디스플레이주식회사 레이저 열전사 장치 및 이를 이용한 유기 발광 표시 장치의 제조방법
JP5755931B2 (ja) * 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
EP2702616B1 (en) * 2011-04-29 2022-06-29 Amberwave, Inc. Thin film intermetallic bond
JP5472419B2 (ja) * 2012-10-10 2014-04-16 ソニー株式会社 集積型薄膜素子の製造方法
JP5472420B2 (ja) * 2012-10-10 2014-04-16 ソニー株式会社 集積型薄膜素子の製造方法
WO2017136672A1 (en) * 2016-02-05 2017-08-10 Applied Materials, Inc. Porous silicon structures and laser machining methods for semiconductor wafer processing
CN107742606B (zh) * 2017-10-30 2024-04-02 桂林电子科技大学 一种键合晶圆的结构及其制备方法
JP7230340B2 (ja) * 2018-05-14 2023-03-01 大日本印刷株式会社 配線基板および配線基板の製造方法
KR102327672B1 (ko) * 2020-02-05 2021-11-17 재단법인 멀티스케일 에너지시스템 연구단 접지력이 우수한 구조물 및 이의 제조 방법
KR102358063B1 (ko) * 2020-05-18 2022-02-04 (주)미래컴퍼니 박막 제거 장치 및 박막 제거 방법

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Publication number Publication date
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