JP3961139B2 - ポジ型感光性組成物 - Google Patents

ポジ型感光性組成物 Download PDF

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Publication number
JP3961139B2
JP3961139B2 JP36761998A JP36761998A JP3961139B2 JP 3961139 B2 JP3961139 B2 JP 3961139B2 JP 36761998 A JP36761998 A JP 36761998A JP 36761998 A JP36761998 A JP 36761998A JP 3961139 B2 JP3961139 B2 JP 3961139B2
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JP
Japan
Prior art keywords
group
acid
photosensitive composition
positive photosensitive
amino
Prior art date
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Expired - Lifetime
Application number
JP36761998A
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English (en)
Japanese (ja)
Other versions
JP2000187329A5 (US06780888-20040824-C00057.png
JP2000187329A (ja
Inventor
邦彦 児玉
健一郎 佐藤
利明 青合
保雅 河辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP36761998A priority Critical patent/JP3961139B2/ja
Priority to US09/471,007 priority patent/US6699635B1/en
Priority to KR1019990061728A priority patent/KR100587896B1/ko
Publication of JP2000187329A publication Critical patent/JP2000187329A/ja
Publication of JP2000187329A5 publication Critical patent/JP2000187329A5/ja
Application granted granted Critical
Publication of JP3961139B2 publication Critical patent/JP3961139B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
JP36761998A 1998-12-24 1998-12-24 ポジ型感光性組成物 Expired - Lifetime JP3961139B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP36761998A JP3961139B2 (ja) 1998-12-24 1998-12-24 ポジ型感光性組成物
US09/471,007 US6699635B1 (en) 1998-12-24 1999-12-23 Positive photosensitive composition
KR1019990061728A KR100587896B1 (ko) 1998-12-24 1999-12-24 포지티브 감광성 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36761998A JP3961139B2 (ja) 1998-12-24 1998-12-24 ポジ型感光性組成物

Publications (3)

Publication Number Publication Date
JP2000187329A JP2000187329A (ja) 2000-07-04
JP2000187329A5 JP2000187329A5 (US06780888-20040824-C00057.png) 2005-02-24
JP3961139B2 true JP3961139B2 (ja) 2007-08-22

Family

ID=18489771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36761998A Expired - Lifetime JP3961139B2 (ja) 1998-12-24 1998-12-24 ポジ型感光性組成物

Country Status (3)

Country Link
US (1) US6699635B1 (US06780888-20040824-C00057.png)
JP (1) JP3961139B2 (US06780888-20040824-C00057.png)
KR (1) KR100587896B1 (US06780888-20040824-C00057.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4576737B2 (ja) * 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2002006483A (ja) * 2000-06-20 2002-01-09 Sumitomo Chem Co Ltd フォトレジスト組成物
JP2004514952A (ja) * 2000-11-29 2004-05-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリマー中の保護基、フォトレジスト、およびマイクロリソグラフィー法
KR100795109B1 (ko) * 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
JP4839522B2 (ja) * 2001-04-12 2011-12-21 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4574067B2 (ja) * 2001-06-08 2010-11-04 ルネサスエレクトロニクス株式会社 レジスト組成物
JP4262422B2 (ja) * 2001-06-28 2009-05-13 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
TW588218B (en) * 2001-08-21 2004-05-21 Fuji Photo Film Co Ltd Stimulation-sensitive composition and compound
KR101266564B1 (ko) * 2005-08-03 2013-05-22 제이에스알 가부시끼가이샤 도금 조형물 제조용 포지티브형 감방사선성 수지 조성물,전사 필름 및 도금 조형물의 제조 방법
JP5544130B2 (ja) * 2009-09-01 2014-07-09 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP2019160004A (ja) 2018-03-15 2019-09-19 富士フイルム株式会社 画像判別装置，画像判別方法ならびに画像判別装置のプログラムおよびそのプログラムを格納した記録媒体

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258257A (en) * 1991-09-23 1993-11-02 Shipley Company Inc. Radiation sensitive compositions comprising polymer having acid labile groups
EP0537524A1 (en) * 1991-10-17 1993-04-21 Shipley Company Inc. Radiation sensitive compositions and methods
JP3317576B2 (ja) * 1994-05-12 2002-08-26 富士写真フイルム株式会社 ポジ型感光性樹脂組成物
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US6576392B1 (en) * 1996-12-07 2003-06-10 Fuji Photo Film Co., Ltd. Positive photoresist composition
WO1998037458A1 (fr) * 1997-02-20 1998-08-27 Nippon Zeon Co., Ltd. Composition d'un agent de reserve
JPH11218927A (ja) * 1998-02-04 1999-08-10 Nippon Zeon Co Ltd レジスト組成物
US6103447A (en) * 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
JP4019403B2 (ja) * 1999-03-08 2007-12-12 Ｊｓｒ株式会社 レジストパターンの形成方法

Also Published As

Publication number Publication date
US6699635B1 (en) 2004-03-02
JP2000187329A (ja) 2000-07-04
KR100587896B1 (ko) 2006-06-09
KR20000048397A (ko) 2000-07-25

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