JP3954233B2 - ポジ型フォトレジスト組成物 - Google Patents
ポジ型フォトレジスト組成物 Download PDFInfo
- Publication number
- JP3954233B2 JP3954233B2 JP08240799A JP8240799A JP3954233B2 JP 3954233 B2 JP3954233 B2 JP 3954233B2 JP 08240799 A JP08240799 A JP 08240799A JP 8240799 A JP8240799 A JP 8240799A JP 3954233 B2 JP3954233 B2 JP 3954233B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- copolymer
- photoresist composition
- general formula
- positive photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 *c1ccccc1 Chemical compound *c1ccccc1 0.000 description 19
- PCHNHBDERVRNFV-UHFFFAOYSA-N Oc(cc1)ccc1S(c1ccccc1)c(cc1)ccc1O Chemical compound Oc(cc1)ccc1S(c1ccccc1)c(cc1)ccc1O PCHNHBDERVRNFV-UHFFFAOYSA-N 0.000 description 2
- JATNAMJRDWBSSF-JWIMYKKASA-N CC(C)[C@@](C)(C(C)(C)CC(C)c1ccccc1)OC1(C)CCCCC1 Chemical compound CC(C)[C@@](C)(C(C)(C)CC(C)c1ccccc1)OC1(C)CCCCC1 JATNAMJRDWBSSF-JWIMYKKASA-N 0.000 description 1
- YQUQWHNMBPIWGK-UHFFFAOYSA-N CC(C)c(cc1)ccc1O Chemical compound CC(C)c(cc1)ccc1O YQUQWHNMBPIWGK-UHFFFAOYSA-N 0.000 description 1
- GZVCOQGFWKBNRQ-UHFFFAOYSA-N CCCC(c(cccc1)c1C([IH]OS(=O)=O)=O)=O Chemical compound CCCC(c(cccc1)c1C([IH]OS(=O)=O)=O)=O GZVCOQGFWKBNRQ-UHFFFAOYSA-N 0.000 description 1
- RXFVXAHQZBAGGF-UHFFFAOYSA-N CCCCc1ccc(C(C)C)cc1 Chemical compound CCCCc1ccc(C(C)C)cc1 RXFVXAHQZBAGGF-UHFFFAOYSA-N 0.000 description 1
- OXIYAWOWPAMEPC-UHFFFAOYSA-N CS(c1ccccc1)(C1=CCCC=C1)C1=CCCC=C1 Chemical compound CS(c1ccccc1)(C1=CCCC=C1)C1=CCCC=C1 OXIYAWOWPAMEPC-UHFFFAOYSA-N 0.000 description 1
- WUJCUVJQGPLBLN-UHFFFAOYSA-N CS(c1ccccc1)(c1ccccc1)c(cc1)ccc1OCI Chemical compound CS(c1ccccc1)(c1ccccc1)c(cc1)ccc1OCI WUJCUVJQGPLBLN-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- IKKIQCJURVQKQC-UHFFFAOYSA-N IS(c1ccccc1)(c1ccccc1)c1ccccc1 Chemical compound IS(c1ccccc1)(c1ccccc1)c1ccccc1 IKKIQCJURVQKQC-UHFFFAOYSA-N 0.000 description 1
- IUTAQFRYYGLDLK-UHFFFAOYSA-N O=C(C1C(C(CC=C2)C3=O)C2=CCC1)N3OS(=O)=O Chemical compound O=C(C1C(C(CC=C2)C3=O)C2=CCC1)N3OS(=O)=O IUTAQFRYYGLDLK-UHFFFAOYSA-N 0.000 description 1
- YRVCUSOMDZCAEJ-UHFFFAOYSA-N O=C(c1c2c(C3=O)cccc2ccc1)N3OS(=O)=O Chemical compound O=C(c1c2c(C3=O)cccc2ccc1)N3OS(=O)=O YRVCUSOMDZCAEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08240799A JP3954233B2 (ja) | 1998-03-30 | 1999-03-25 | ポジ型フォトレジスト組成物 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-84164 | 1998-03-30 | ||
| JP8416498 | 1998-03-30 | ||
| JP08240799A JP3954233B2 (ja) | 1998-03-30 | 1999-03-25 | ポジ型フォトレジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11344808A JPH11344808A (ja) | 1999-12-14 |
| JPH11344808A5 JPH11344808A5 (enExample) | 2005-07-07 |
| JP3954233B2 true JP3954233B2 (ja) | 2007-08-08 |
Family
ID=26423436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08240799A Expired - Fee Related JP3954233B2 (ja) | 1998-03-30 | 1999-03-25 | ポジ型フォトレジスト組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3954233B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3285086B2 (ja) | 1999-05-20 | 2002-05-27 | 日本電気株式会社 | 化学増幅型レジスト組成物 |
| WO2001055789A2 (en) * | 2000-01-25 | 2001-08-02 | Infineon Technologies Ag | Chemically amplified short wavelength resist |
| EP1126321A1 (en) * | 2000-02-10 | 2001-08-22 | Shipley Company LLC | Positive photoresists containing crosslinked polymers |
| KR100674073B1 (ko) * | 2000-03-07 | 2007-01-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 증폭 포지티브형 레지스트 재료 |
| TWI253543B (en) * | 2000-07-19 | 2006-04-21 | Shinetsu Chemical Co | Chemically amplified positive resist composition |
| JP3956088B2 (ja) * | 2000-07-19 | 2007-08-08 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| JP4694686B2 (ja) * | 2000-08-31 | 2011-06-08 | 東京応化工業株式会社 | 半導体素子製造方法 |
| CN100339767C (zh) | 2001-06-22 | 2007-09-26 | 和光纯药工业株式会社 | 抗蚀剂组合物 |
| JP4536546B2 (ja) * | 2005-02-21 | 2010-09-01 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
| JP4893270B2 (ja) * | 2006-11-29 | 2012-03-07 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP5553488B2 (ja) * | 2008-06-06 | 2014-07-16 | 株式会社ダイセル | リソグラフィー用重合体並びにその製造方法 |
| CN103052670B (zh) | 2010-07-30 | 2016-03-02 | 三菱瓦斯化学株式会社 | 化合物、放射线敏感性组合物和抗蚀图案形成方法 |
| US20170058079A1 (en) | 2015-08-24 | 2017-03-02 | A School Corporation Kansai University | Polymer compound, radiation sensitive composition and pattern forming method |
| US20170059989A1 (en) | 2015-08-24 | 2017-03-02 | A School Corporation Kansai University | Polymer compound, radiation sensitive composition and pattern forming method |
-
1999
- 1999-03-25 JP JP08240799A patent/JP3954233B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11344808A (ja) | 1999-12-14 |
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