JP3943445B2 - フォトレジスト重合体及びフォトレジスト組成物 - Google Patents

フォトレジスト重合体及びフォトレジスト組成物 Download PDF

Info

Publication number
JP3943445B2
JP3943445B2 JP2002164543A JP2002164543A JP3943445B2 JP 3943445 B2 JP3943445 B2 JP 3943445B2 JP 2002164543 A JP2002164543 A JP 2002164543A JP 2002164543 A JP2002164543 A JP 2002164543A JP 3943445 B2 JP3943445 B2 JP 3943445B2
Authority
JP
Japan
Prior art keywords
photoresist
polymer
group
difluoro
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002164543A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003055408A (ja
JP2003055408A5 (enExample
Inventor
根守 李
載昌 鄭
起秀 申
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of JP2003055408A publication Critical patent/JP2003055408A/ja
Publication of JP2003055408A5 publication Critical patent/JP2003055408A5/ja
Application granted granted Critical
Publication of JP3943445B2 publication Critical patent/JP3943445B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerization Catalysts (AREA)
JP2002164543A 2001-06-21 2002-06-05 フォトレジスト重合体及びフォトレジスト組成物 Expired - Fee Related JP3943445B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2001-35469 2001-06-21
KR1020010035469A KR100557554B1 (ko) 2001-06-21 2001-06-21 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체

Publications (3)

Publication Number Publication Date
JP2003055408A JP2003055408A (ja) 2003-02-26
JP2003055408A5 JP2003055408A5 (enExample) 2005-04-07
JP3943445B2 true JP3943445B2 (ja) 2007-07-11

Family

ID=19711184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002164543A Expired - Fee Related JP3943445B2 (ja) 2001-06-21 2002-06-05 フォトレジスト重合体及びフォトレジスト組成物

Country Status (3)

Country Link
US (1) US6737217B2 (enExample)
JP (1) JP3943445B2 (enExample)
KR (1) KR100557554B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7225440B2 (en) * 2003-08-14 2007-05-29 International Business Machines Corporation System and method for manufacturing and updating insertable portable operating system module
US7078816B2 (en) 2004-03-31 2006-07-18 Endicott Interconnect Technologies, Inc. Circuitized substrate
US7499739B2 (en) * 2005-10-27 2009-03-03 Smiths Medical Pm, Inc. Single use pulse oximeter
JP4909768B2 (ja) * 2006-03-14 2012-04-04 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI475323B (zh) 2006-03-14 2015-03-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
TW200736855A (en) * 2006-03-22 2007-10-01 Quanta Display Inc Method of fabricating photoresist thinner
EP1906247A1 (en) * 2006-09-29 2008-04-02 FUJIFILM Corporation Resist composition and pattern forming method using the same
US8609319B2 (en) * 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same
KR101301464B1 (ko) * 2011-04-26 2013-08-29 금호석유화학 주식회사 유기반사방지막용 공중합체, 단량체 및 그 공중합체를 포함하는 조성물
JP6809540B2 (ja) * 2017-01-17 2021-01-06 株式会社ニコン （メタ）アクリレート化合物、光学用樹脂添加剤、光学素子、及び光学装置
KR102458068B1 (ko) * 2020-11-02 2022-10-24 인하대학교 산학협력단 레지스트 조성물 및 이를 사용한 패턴 형성 방법
CN119028277A (zh) * 2023-05-26 2024-11-26 京东方科技集团股份有限公司 显示面板及显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230656B1 (en) * 1985-12-25 1991-03-13 Tosoh Corporation Halogen-containing polyacrylate derivatives
US4990582A (en) * 1986-07-18 1991-02-05 Salamone Joseph C Fluorine containing soft contact lens hydrogels
JPS6374054A (ja) * 1986-09-18 1988-04-04 Tosoh Corp ポジ型レジストの現像方法
JPH0245509A (ja) * 1988-08-05 1990-02-15 Tosoh Corp フッ素含有ポリアクリル酸誘導体
JPH05105878A (ja) * 1991-03-13 1993-04-27 Merck Patent Gmbh 電気光学的系
JP4207261B2 (ja) * 1998-09-04 2009-01-14 Ｊｓｒ株式会社 カラーフィルタ用感放射線性組成物

Also Published As

Publication number Publication date
KR20020096666A (ko) 2002-12-31
JP2003055408A (ja) 2003-02-26
KR100557554B1 (ko) 2006-03-03
US20030022103A1 (en) 2003-01-30
US6737217B2 (en) 2004-05-18

Similar Documents

Publication Publication Date Title
JP4663075B2 (ja) フォトレジスト用単量体とその製造方法、フォトレジスト用共重合体とその製造方法及びフォトレジスト組成物
JP4344119B2 (ja) フォトレジスト単量体、フォトレジスト共重合体、フォトレジスト組成物、及びフォトレジストパターンの形成方法
US7361447B2 (en) Photoresist polymer and photoresist composition containing the same
JP2001233920A (ja) フォトレジスト単量体、フォトレジスト重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
JP3688222B2 (ja) フォトレジスト重合体とその製造方法、これを利用したフォトレジスト組成物、フォトレジストパターン形成方法、及び、半導体素子
JP2000162771A (ja) フォトレジスト用単量体、フォトレジスト用重合体とその製造方法、フォトレジスト組成物、フォトレジストパタ―ンの形成方法、及び、半導体素子。
JP2001106737A (ja) フォトレジスト重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
JP3943445B2 (ja) フォトレジスト重合体及びフォトレジスト組成物
JP3641748B2 (ja) フォトレジスト単量体、フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
JP4028283B2 (ja) フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、及びフォトレジストパターン形成方法
JP3547376B2 (ja) フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び、半導体素子
US6613493B2 (en) Photoresist polymer and composition having nitro groups
JP4288025B2 (ja) フォトレジスト単量体、フォトレジスト重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
JP2003040931A (ja) フォトレジスト単量体、フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、フォトレジストパターンの形成方法及び半導体素子
US6921622B2 (en) Photoresist monomers, polymers thereof and photoresist compositions containing the same
KR100557552B1 (ko) 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물
JP4097391B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト重合体とその製造方法、これを利用したフォトレジスト組成物、及び、半導体素子
JP4041335B2 (ja) フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法及び半導体素子
KR20030000660A (ko) 사이클로헥센 유도체를 이용한 포토레지스트 단량체 및그의 중합체
KR20020053900A (ko) 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물
KR20060002054A (ko) 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
KR20060002454A (ko) 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
KR20030032450A (ko) 신규의 네가티브형 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
KR20020079127A (ko) 할로겐 원소를 포함하는 말레이미드계 포토레지스트단량체 및 이를 포함하는 포토레지스트 중합체
KR20030001784A (ko) 신규의 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040531

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040531

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061205

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070302

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070327

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070405

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100413

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110413

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110413

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120413

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130413

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees