KR100557554B1 - 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체 - Google Patents

불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체 Download PDF

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KR100557554B1
KR100557554B1 KR1020010035469A KR20010035469A KR100557554B1 KR 100557554 B1 KR100557554 B1 KR 100557554B1 KR 1020010035469 A KR1020010035469 A KR 1020010035469A KR 20010035469 A KR20010035469 A KR 20010035469A KR 100557554 B1 KR100557554 B1 KR 100557554B1
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South Korea
Prior art keywords
photoresist
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polymer
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English (en)
Korean (ko)
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KR20020096666A (ko
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이근수
정재창
신기수
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주식회사 하이닉스반도체
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Priority to KR1020010035469A priority Critical patent/KR100557554B1/ko
Priority to US10/107,646 priority patent/US6737217B2/en
Priority to JP2002164543A priority patent/JP3943445B2/ja
Publication of KR20020096666A publication Critical patent/KR20020096666A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerization Catalysts (AREA)
KR1020010035469A 2001-06-21 2001-06-21 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체 Expired - Fee Related KR100557554B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020010035469A KR100557554B1 (ko) 2001-06-21 2001-06-21 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
US10/107,646 US6737217B2 (en) 2001-06-21 2002-03-27 Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
JP2002164543A JP3943445B2 (ja) 2001-06-21 2002-06-05 フォトレジスト重合体及びフォトレジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010035469A KR100557554B1 (ko) 2001-06-21 2001-06-21 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체

Publications (2)

Publication Number Publication Date
KR20020096666A KR20020096666A (ko) 2002-12-31
KR100557554B1 true KR100557554B1 (ko) 2006-03-03

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KR1020010035469A Expired - Fee Related KR100557554B1 (ko) 2001-06-21 2001-06-21 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체

Country Status (3)

Country Link
US (1) US6737217B2 (enExample)
JP (1) JP3943445B2 (enExample)
KR (1) KR100557554B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7225440B2 (en) * 2003-08-14 2007-05-29 International Business Machines Corporation System and method for manufacturing and updating insertable portable operating system module
US7078816B2 (en) 2004-03-31 2006-07-18 Endicott Interconnect Technologies, Inc. Circuitized substrate
US7499739B2 (en) * 2005-10-27 2009-03-03 Smiths Medical Pm, Inc. Single use pulse oximeter
JP4909768B2 (ja) * 2006-03-14 2012-04-04 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI475323B (zh) 2006-03-14 2015-03-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
TW200736855A (en) * 2006-03-22 2007-10-01 Quanta Display Inc Method of fabricating photoresist thinner
EP1906247A1 (en) * 2006-09-29 2008-04-02 FUJIFILM Corporation Resist composition and pattern forming method using the same
US8609319B2 (en) * 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same
KR101301464B1 (ko) * 2011-04-26 2013-08-29 금호석유화학 주식회사 유기반사방지막용 공중합체, 단량체 및 그 공중합체를 포함하는 조성물
JP6809540B2 (ja) * 2017-01-17 2021-01-06 株式会社ニコン （メタ）アクリレート化合物、光学用樹脂添加剤、光学素子、及び光学装置
KR102458068B1 (ko) * 2020-11-02 2022-10-24 인하대학교 산학협력단 레지스트 조성물 및 이를 사용한 패턴 형성 방법
CN119028277A (zh) * 2023-05-26 2024-11-26 京东方科技集团股份有限公司 显示面板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374054A (ja) * 1986-09-18 1988-04-04 Tosoh Corp ポジ型レジストの現像方法
JPH0245509A (ja) * 1988-08-05 1990-02-15 Tosoh Corp フッ素含有ポリアクリル酸誘導体
JP2000081506A (ja) * 1998-09-04 2000-03-21 Jsr Corp カラーフィルタ用感放射線性組成物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230656B1 (en) * 1985-12-25 1991-03-13 Tosoh Corporation Halogen-containing polyacrylate derivatives
US4990582A (en) * 1986-07-18 1991-02-05 Salamone Joseph C Fluorine containing soft contact lens hydrogels
JPH05105878A (ja) * 1991-03-13 1993-04-27 Merck Patent Gmbh 電気光学的系

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374054A (ja) * 1986-09-18 1988-04-04 Tosoh Corp ポジ型レジストの現像方法
JPH0245509A (ja) * 1988-08-05 1990-02-15 Tosoh Corp フッ素含有ポリアクリル酸誘導体
JP2000081506A (ja) * 1998-09-04 2000-03-21 Jsr Corp カラーフィルタ用感放射線性組成物

Also Published As

Publication number Publication date
KR20020096666A (ko) 2002-12-31
JP2003055408A (ja) 2003-02-26
JP3943445B2 (ja) 2007-07-11
US20030022103A1 (en) 2003-01-30
US6737217B2 (en) 2004-05-18

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