JP3931445B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3931445B2
JP3931445B2 JP25628798A JP25628798A JP3931445B2 JP 3931445 B2 JP3931445 B2 JP 3931445B2 JP 25628798 A JP25628798 A JP 25628798A JP 25628798 A JP25628798 A JP 25628798A JP 3931445 B2 JP3931445 B2 JP 3931445B2
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JP
Japan
Prior art keywords
film
lower electrode
insulating film
potential
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25628798A
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English (en)
Japanese (ja)
Other versions
JP2000091509A5 (enExample
JP2000091509A (ja
Inventor
和功 鳥居
浩史 三木
芳久 藤崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP25628798A priority Critical patent/JP3931445B2/ja
Priority to TW088113639A priority patent/TW447114B/zh
Priority to KR1019990037619A priority patent/KR100709130B1/ko
Priority to US09/391,250 priority patent/US6822276B1/en
Publication of JP2000091509A publication Critical patent/JP2000091509A/ja
Priority to US10/968,077 priority patent/US20050074936A1/en
Publication of JP2000091509A5 publication Critical patent/JP2000091509A5/ja
Application granted granted Critical
Publication of JP3931445B2 publication Critical patent/JP3931445B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug

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  • Semiconductor Memories (AREA)
JP25628798A 1998-09-10 1998-09-10 半導体装置の製造方法 Expired - Fee Related JP3931445B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP25628798A JP3931445B2 (ja) 1998-09-10 1998-09-10 半導体装置の製造方法
TW088113639A TW447114B (en) 1998-09-10 1999-08-10 Semiconductor device and the manufacturing method thereof
KR1019990037619A KR100709130B1 (ko) 1998-09-10 1999-09-06 반도체 장치 및 그 제조방법
US09/391,250 US6822276B1 (en) 1998-09-10 1999-09-07 Memory structure with a ferroelectric capacitor
US10/968,077 US20050074936A1 (en) 1998-09-10 2004-10-20 Method of fabricating a semiconductor device including a reaction barrier film, a diffusion barrier film and a ferroelectric film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25628798A JP3931445B2 (ja) 1998-09-10 1998-09-10 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000091509A JP2000091509A (ja) 2000-03-31
JP2000091509A5 JP2000091509A5 (enExample) 2004-10-21
JP3931445B2 true JP3931445B2 (ja) 2007-06-13

Family

ID=17290566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25628798A Expired - Fee Related JP3931445B2 (ja) 1998-09-10 1998-09-10 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6822276B1 (enExample)
JP (1) JP3931445B2 (enExample)
KR (1) KR100709130B1 (enExample)
TW (1) TW447114B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100428790B1 (ko) * 2001-06-26 2004-04-28 삼성전자주식회사 확장된 플레이트 라인을 갖는 강유전체 메모리소자 및 그제조방법
US6734477B2 (en) * 2001-08-08 2004-05-11 Agilent Technologies, Inc. Fabricating an embedded ferroelectric memory cell
KR100450669B1 (ko) * 2002-01-30 2004-10-01 삼성전자주식회사 산소 침투 경로 및 캡슐화 장벽막을 구비하는 강유전체메모리 소자 및 그 제조 방법
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4798979B2 (ja) * 2004-09-28 2011-10-19 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリの製造方法
US7742277B2 (en) * 2005-08-24 2010-06-22 Ibiden Company Limited Dielectric film capacitor and method of manufacturing the same
US7960774B2 (en) 2005-12-05 2011-06-14 Electronics And Telecommunications Research Institute Memory devices including dielectric thin film and method of manufacturing the same
JP6540791B2 (ja) * 2015-02-27 2019-07-10 株式会社村田製作所 可変容量素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288368A (ja) 1989-04-28 1990-11-28 Seiko Epson Corp 半導体装置の製造方法
JP2898686B2 (ja) 1990-03-06 1999-06-02 株式会社日立製作所 半導体記憶装置およびその製造方法
JPH0590606A (ja) 1991-09-25 1993-04-09 Seiko Epson Corp 半導体装置
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
JPH0714993A (ja) * 1993-06-18 1995-01-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3256358B2 (ja) 1993-12-17 2002-02-12 三井化学株式会社 高屈折率プラスチックレンズ用組成物およびレンズ
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
JP3623834B2 (ja) * 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
KR100292012B1 (ko) * 1995-06-28 2001-11-15 엔, 마이클 그로브 실리콘에집적된강유전체커패시터를위한장벽층
JP3388089B2 (ja) * 1996-04-25 2003-03-17 シャープ株式会社 不揮発性半導体メモリ素子の製造方法
US6043529A (en) * 1996-09-30 2000-03-28 Siemens Aktiengesellschaft Semiconductor configuration with a protected barrier for a stacked cell
DE19640246A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Halbleiteranordnung mit geschützter Barriere für eine Stapelzelle
US6693318B1 (en) * 1997-12-18 2004-02-17 Infineon Technologies North America Reduced diffusion of a mobile specie from a metal oxide ceramic
ATE533178T1 (de) * 1998-09-09 2011-11-15 Texas Instruments Inc Integrierter schaltkreis mit kondensator und diesbezügliches herstellungsverfahren
KR100343287B1 (ko) * 1999-09-21 2002-07-15 윤종용 고집적 강유전체 메모리 소자의 형성 방법
KR100560803B1 (ko) * 2004-02-04 2006-03-13 삼성전자주식회사 캐패시터를 갖는 반도체 소자 및 그 제조방법

Also Published As

Publication number Publication date
US20050074936A1 (en) 2005-04-07
KR20000022925A (ko) 2000-04-25
TW447114B (en) 2001-07-21
KR100709130B1 (ko) 2007-04-18
US6822276B1 (en) 2004-11-23
JP2000091509A (ja) 2000-03-31

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