JP3920550B2 - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
- Publication number
- JP3920550B2 JP3920550B2 JP2000295268A JP2000295268A JP3920550B2 JP 3920550 B2 JP3920550 B2 JP 3920550B2 JP 2000295268 A JP2000295268 A JP 2000295268A JP 2000295268 A JP2000295268 A JP 2000295268A JP 3920550 B2 JP3920550 B2 JP 3920550B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- data
- data transfer
- semiconductor memory
- cell unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 230000015654 memory Effects 0.000 claims description 310
- 238000012546 transfer Methods 0.000 claims description 256
- 230000005669 field effect Effects 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 7
- 229910021342 tungsten silicide Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910019001 CoSi Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LZIAMMQBHJIZAG-UHFFFAOYSA-N 2-[di(propan-2-yl)amino]ethyl carbamimidothioate Chemical compound CC(C)N(C(C)C)CCSC(N)=N LZIAMMQBHJIZAG-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-BJUDXGSMSA-N Boron-10 Chemical compound [10B] ZOXJGFHDIHLPTG-BJUDXGSMSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000295268A JP3920550B2 (ja) | 1999-09-27 | 2000-09-27 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27233299 | 1999-09-27 | ||
| JP11-272332 | 1999-09-27 | ||
| JP2000295268A JP3920550B2 (ja) | 1999-09-27 | 2000-09-27 | 不揮発性半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001167592A JP2001167592A (ja) | 2001-06-22 |
| JP2001167592A5 JP2001167592A5 (enrdf_load_stackoverflow) | 2004-12-02 |
| JP3920550B2 true JP3920550B2 (ja) | 2007-05-30 |
Family
ID=26550151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000295268A Expired - Fee Related JP3920550B2 (ja) | 1999-09-27 | 2000-09-27 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3920550B2 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177197B2 (en) * | 2001-09-17 | 2007-02-13 | Sandisk Corporation | Latched programming of memory and method |
| JP3984209B2 (ja) | 2003-07-31 | 2007-10-03 | 株式会社東芝 | 半導体記憶装置 |
| JP4519612B2 (ja) * | 2004-11-16 | 2010-08-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR100729351B1 (ko) * | 2004-12-31 | 2007-06-15 | 삼성전자주식회사 | 낸드 플래시 메모리 장치 및 그것의 프로그램 방법 |
| JP4836487B2 (ja) * | 2005-04-28 | 2011-12-14 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP5020608B2 (ja) * | 2005-11-23 | 2012-09-05 | 三星電子株式会社 | 低負荷ビットライン構造を有する不揮発性半導体メモリ及びそのプログラミング方法 |
| JP4405489B2 (ja) | 2006-08-31 | 2010-01-27 | 株式会社東芝 | 不揮発性半導体メモリ |
| JP5340264B2 (ja) * | 2007-04-26 | 2013-11-13 | アギア システムズ インコーポレーテッド | エラー訂正機能および効率的なパーシャル・ワード書き込み動作を有するメモリ・デバイス |
| US7791976B2 (en) * | 2008-04-24 | 2010-09-07 | Qualcomm Incorporated | Systems and methods for dynamic power savings in electronic memory operation |
| JP5367641B2 (ja) * | 2010-06-03 | 2013-12-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP6659478B2 (ja) | 2016-06-17 | 2020-03-04 | キオクシア株式会社 | 半導体記憶装置 |
-
2000
- 2000-09-27 JP JP2000295268A patent/JP3920550B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001167592A (ja) | 2001-06-22 |
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