JP3916375B2 - ポリッシング方法および装置 - Google Patents

ポリッシング方法および装置 Download PDF

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Publication number
JP3916375B2
JP3916375B2 JP2000166682A JP2000166682A JP3916375B2 JP 3916375 B2 JP3916375 B2 JP 3916375B2 JP 2000166682 A JP2000166682 A JP 2000166682A JP 2000166682 A JP2000166682 A JP 2000166682A JP 3916375 B2 JP3916375 B2 JP 3916375B2
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JP
Japan
Prior art keywords
polishing
layer
semiconductor wafer
barrier metal
metal layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2000166682A
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English (en)
Japanese (ja)
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JP2001345292A5 (https=
JP2001345292A (ja
Inventor
憲雄 木村
達也 小濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
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Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2000166682A priority Critical patent/JP3916375B2/ja
Priority to US09/870,479 priority patent/US6663469B2/en
Publication of JP2001345292A publication Critical patent/JP2001345292A/ja
Publication of JP2001345292A5 publication Critical patent/JP2001345292A5/ja
Application granted granted Critical
Publication of JP3916375B2 publication Critical patent/JP3916375B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2000166682A 2000-06-02 2000-06-02 ポリッシング方法および装置 Expired - Lifetime JP3916375B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000166682A JP3916375B2 (ja) 2000-06-02 2000-06-02 ポリッシング方法および装置
US09/870,479 US6663469B2 (en) 2000-06-02 2001-06-01 Polishing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000166682A JP3916375B2 (ja) 2000-06-02 2000-06-02 ポリッシング方法および装置

Publications (3)

Publication Number Publication Date
JP2001345292A JP2001345292A (ja) 2001-12-14
JP2001345292A5 JP2001345292A5 (https=) 2005-07-14
JP3916375B2 true JP3916375B2 (ja) 2007-05-16

Family

ID=18669964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000166682A Expired - Lifetime JP3916375B2 (ja) 2000-06-02 2000-06-02 ポリッシング方法および装置

Country Status (2)

Country Link
US (1) US6663469B2 (https=)
JP (1) JP3916375B2 (https=)

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JP2009129970A (ja) * 2007-11-20 2009-06-11 Ebara Corp 研磨装置及び研磨方法
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US8952708B2 (en) 2011-12-02 2015-02-10 Neovision Llc Impedance resonance sensor for real time monitoring of different processes and methods of using same
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JP2014011408A (ja) * 2012-07-02 2014-01-20 Toshiba Corp 半導体装置の製造方法および研磨装置
JP6456133B2 (ja) * 2014-12-22 2019-01-23 株式会社荏原製作所 基板処理装置
CN107530878B (zh) 2015-05-13 2021-01-08 整形工具股份有限公司 用于被引导工具的系统、方法和设备
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
CN106115612B (zh) * 2016-07-11 2017-11-17 中国电子科技集团公司第四十五研究所 一种晶圆平坦化方法
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TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
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TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
JP7179586B2 (ja) * 2018-11-08 2022-11-29 株式会社荏原製作所 渦電流検出装置及び研磨装置
KR20250073489A (ko) 2020-05-14 2025-05-27 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
KR102794221B1 (ko) * 2020-11-19 2025-04-15 주식회사 케이씨텍 기판 연마 장치
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Publication number Publication date
US20020002029A1 (en) 2002-01-03
JP2001345292A (ja) 2001-12-14
US6663469B2 (en) 2003-12-16

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