FR2780552B1 - Procede de polissage de plaquettes de circuits integres - Google Patents

Procede de polissage de plaquettes de circuits integres

Info

Publication number
FR2780552B1
FR2780552B1 FR9808152A FR9808152A FR2780552B1 FR 2780552 B1 FR2780552 B1 FR 2780552B1 FR 9808152 A FR9808152 A FR 9808152A FR 9808152 A FR9808152 A FR 9808152A FR 2780552 B1 FR2780552 B1 FR 2780552B1
Authority
FR
France
Prior art keywords
integrated circuits
polishing wafers
wafers
polishing
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9808152A
Other languages
English (en)
Other versions
FR2780552A1 (fr
Inventor
Emmanuel Perrin
Frederic Robert
Henri Banvillet
Luc Liauzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9808152A priority Critical patent/FR2780552B1/fr
Priority to US09/344,155 priority patent/US6254457B1/en
Publication of FR2780552A1 publication Critical patent/FR2780552A1/fr
Application granted granted Critical
Publication of FR2780552B1 publication Critical patent/FR2780552B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR9808152A 1998-06-26 1998-06-26 Procede de polissage de plaquettes de circuits integres Expired - Fee Related FR2780552B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9808152A FR2780552B1 (fr) 1998-06-26 1998-06-26 Procede de polissage de plaquettes de circuits integres
US09/344,155 US6254457B1 (en) 1998-06-26 1999-06-24 Process for polishing wafers of integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9808152A FR2780552B1 (fr) 1998-06-26 1998-06-26 Procede de polissage de plaquettes de circuits integres

Publications (2)

Publication Number Publication Date
FR2780552A1 FR2780552A1 (fr) 1999-12-31
FR2780552B1 true FR2780552B1 (fr) 2000-08-25

Family

ID=9527923

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9808152A Expired - Fee Related FR2780552B1 (fr) 1998-06-26 1998-06-26 Procede de polissage de plaquettes de circuits integres

Country Status (2)

Country Link
US (1) US6254457B1 (fr)
FR (1) FR2780552B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623333B1 (en) * 1999-12-14 2003-09-23 Texas Instruments Incorporated System and method for controlling a wafer polishing process
JP3916375B2 (ja) * 2000-06-02 2007-05-16 株式会社荏原製作所 ポリッシング方法および装置
WO2003038478A2 (fr) * 2001-10-26 2003-05-08 Little Brent E Intersections de guides d'ondes optiques laterales a faible perte de transmission
US7534725B2 (en) 2007-03-21 2009-05-19 Taiwan Semiconductor Manufacturing Company Advanced process control for semiconductor processing
US7634325B2 (en) * 2007-05-03 2009-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Prediction of uniformity of a wafer
JP2009158749A (ja) 2007-12-27 2009-07-16 Ricoh Co Ltd 化学機械研磨方法及び化学機械研磨装置
JP6475604B2 (ja) * 2015-11-24 2019-02-27 株式会社荏原製作所 研磨方法
CN110071041B (zh) * 2018-01-22 2021-04-27 长鑫存储技术有限公司 浅沟槽隔离结构的制备方法、化学机械研磨方法及系统
US10801199B2 (en) * 2019-01-18 2020-10-13 Guojun Pan Background wall structure

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5433650A (en) * 1993-05-03 1995-07-18 Motorola, Inc. Method for polishing a substrate
US5664987A (en) * 1994-01-31 1997-09-09 National Semiconductor Corporation Methods and apparatus for control of polishing pad conditioning for wafer planarization
JP3633062B2 (ja) * 1994-12-22 2005-03-30 株式会社デンソー 研磨方法および研磨装置
US5552996A (en) * 1995-02-16 1996-09-03 International Business Machines Corporation Method and system using the design pattern of IC chips in the processing thereof
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
US5655951A (en) * 1995-09-29 1997-08-12 Micron Technology, Inc. Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5609718A (en) * 1995-09-29 1997-03-11 Micron Technology, Inc. Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
JP3649493B2 (ja) * 1995-11-02 2005-05-18 株式会社荏原製作所 ポリッシングの終点決定方法及び装置
US5685766A (en) * 1995-11-30 1997-11-11 Speedfam Corporation Polishing control method
US5695601A (en) * 1995-12-27 1997-12-09 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method
US5618447A (en) * 1996-02-13 1997-04-08 Micron Technology, Inc. Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers
US5659492A (en) * 1996-03-19 1997-08-19 International Business Machines Corporation Chemical mechanical polishing endpoint process control
US5667629A (en) * 1996-06-21 1997-09-16 Chartered Semiconductor Manufactuing Pte, Ltd. Method and apparatus for determination of the end point in chemical mechanical polishing
US5948203A (en) * 1996-07-29 1999-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring
JPH10112493A (ja) * 1996-08-13 1998-04-28 Sony Corp 表面矯正薄板保持装置、面調整手段及び向き調整手段
JP3788533B2 (ja) * 1996-09-30 2006-06-21 東京エレクトロン株式会社 研磨装置および研磨方法
US6594542B1 (en) * 1996-10-04 2003-07-15 Applied Materials, Inc. Method and system for controlling chemical mechanical polishing thickness removal
JP3011113B2 (ja) * 1996-11-15 2000-02-21 日本電気株式会社 基板の研磨方法及び研磨装置
US5951370A (en) * 1997-10-02 1999-09-14 Speedfam-Ipec Corp. Method and apparatus for monitoring and controlling the flatness of a polishing pad
US6004196A (en) * 1998-02-27 1999-12-21 Micron Technology, Inc. Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates

Also Published As

Publication number Publication date
US6254457B1 (en) 2001-07-03
FR2780552A1 (fr) 1999-12-31

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100226