FR2780552B1 - Procede de polissage de plaquettes de circuits integres - Google Patents
Procede de polissage de plaquettes de circuits integresInfo
- Publication number
- FR2780552B1 FR2780552B1 FR9808152A FR9808152A FR2780552B1 FR 2780552 B1 FR2780552 B1 FR 2780552B1 FR 9808152 A FR9808152 A FR 9808152A FR 9808152 A FR9808152 A FR 9808152A FR 2780552 B1 FR2780552 B1 FR 2780552B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuits
- polishing wafers
- wafers
- polishing
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9808152A FR2780552B1 (fr) | 1998-06-26 | 1998-06-26 | Procede de polissage de plaquettes de circuits integres |
US09/344,155 US6254457B1 (en) | 1998-06-26 | 1999-06-24 | Process for polishing wafers of integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9808152A FR2780552B1 (fr) | 1998-06-26 | 1998-06-26 | Procede de polissage de plaquettes de circuits integres |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2780552A1 FR2780552A1 (fr) | 1999-12-31 |
FR2780552B1 true FR2780552B1 (fr) | 2000-08-25 |
Family
ID=9527923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9808152A Expired - Fee Related FR2780552B1 (fr) | 1998-06-26 | 1998-06-26 | Procede de polissage de plaquettes de circuits integres |
Country Status (2)
Country | Link |
---|---|
US (1) | US6254457B1 (fr) |
FR (1) | FR2780552B1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6623333B1 (en) * | 1999-12-14 | 2003-09-23 | Texas Instruments Incorporated | System and method for controlling a wafer polishing process |
JP3916375B2 (ja) * | 2000-06-02 | 2007-05-16 | 株式会社荏原製作所 | ポリッシング方法および装置 |
WO2003038478A2 (fr) * | 2001-10-26 | 2003-05-08 | Little Brent E | Intersections de guides d'ondes optiques laterales a faible perte de transmission |
US7534725B2 (en) | 2007-03-21 | 2009-05-19 | Taiwan Semiconductor Manufacturing Company | Advanced process control for semiconductor processing |
US7634325B2 (en) * | 2007-05-03 | 2009-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Prediction of uniformity of a wafer |
JP2009158749A (ja) | 2007-12-27 | 2009-07-16 | Ricoh Co Ltd | 化学機械研磨方法及び化学機械研磨装置 |
JP6475604B2 (ja) * | 2015-11-24 | 2019-02-27 | 株式会社荏原製作所 | 研磨方法 |
CN110071041B (zh) * | 2018-01-22 | 2021-04-27 | 长鑫存储技术有限公司 | 浅沟槽隔离结构的制备方法、化学机械研磨方法及系统 |
US10801199B2 (en) * | 2019-01-18 | 2020-10-13 | Guojun Pan | Background wall structure |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5240552A (en) * | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5433650A (en) * | 1993-05-03 | 1995-07-18 | Motorola, Inc. | Method for polishing a substrate |
US5664987A (en) * | 1994-01-31 | 1997-09-09 | National Semiconductor Corporation | Methods and apparatus for control of polishing pad conditioning for wafer planarization |
JP3633062B2 (ja) * | 1994-12-22 | 2005-03-30 | 株式会社デンソー | 研磨方法および研磨装置 |
US5552996A (en) * | 1995-02-16 | 1996-09-03 | International Business Machines Corporation | Method and system using the design pattern of IC chips in the processing thereof |
US5665199A (en) * | 1995-06-23 | 1997-09-09 | Advanced Micro Devices, Inc. | Methodology for developing product-specific interlayer dielectric polish processes |
US5655951A (en) * | 1995-09-29 | 1997-08-12 | Micron Technology, Inc. | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5609718A (en) * | 1995-09-29 | 1997-03-11 | Micron Technology, Inc. | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers |
JP3649493B2 (ja) * | 1995-11-02 | 2005-05-18 | 株式会社荏原製作所 | ポリッシングの終点決定方法及び装置 |
US5685766A (en) * | 1995-11-30 | 1997-11-11 | Speedfam Corporation | Polishing control method |
US5695601A (en) * | 1995-12-27 | 1997-12-09 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method |
US5618447A (en) * | 1996-02-13 | 1997-04-08 | Micron Technology, Inc. | Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers |
US5659492A (en) * | 1996-03-19 | 1997-08-19 | International Business Machines Corporation | Chemical mechanical polishing endpoint process control |
US5667629A (en) * | 1996-06-21 | 1997-09-16 | Chartered Semiconductor Manufactuing Pte, Ltd. | Method and apparatus for determination of the end point in chemical mechanical polishing |
US5948203A (en) * | 1996-07-29 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring |
JPH10112493A (ja) * | 1996-08-13 | 1998-04-28 | Sony Corp | 表面矯正薄板保持装置、面調整手段及び向き調整手段 |
JP3788533B2 (ja) * | 1996-09-30 | 2006-06-21 | 東京エレクトロン株式会社 | 研磨装置および研磨方法 |
US6594542B1 (en) * | 1996-10-04 | 2003-07-15 | Applied Materials, Inc. | Method and system for controlling chemical mechanical polishing thickness removal |
JP3011113B2 (ja) * | 1996-11-15 | 2000-02-21 | 日本電気株式会社 | 基板の研磨方法及び研磨装置 |
US5951370A (en) * | 1997-10-02 | 1999-09-14 | Speedfam-Ipec Corp. | Method and apparatus for monitoring and controlling the flatness of a polishing pad |
US6004196A (en) * | 1998-02-27 | 1999-12-21 | Micron Technology, Inc. | Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates |
-
1998
- 1998-06-26 FR FR9808152A patent/FR2780552B1/fr not_active Expired - Fee Related
-
1999
- 1999-06-24 US US09/344,155 patent/US6254457B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6254457B1 (en) | 2001-07-03 |
FR2780552A1 (fr) | 1999-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100226 |