KR970003587A - 연마를 위한 예비형 반도체 회로기판의 성형 방법 - Google Patents

연마를 위한 예비형 반도체 회로기판의 성형 방법 Download PDF

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Publication number
KR970003587A
KR970003587A KR1019960013586A KR19960013586A KR970003587A KR 970003587 A KR970003587 A KR 970003587A KR 1019960013586 A KR1019960013586 A KR 1019960013586A KR 19960013586 A KR19960013586 A KR 19960013586A KR 970003587 A KR970003587 A KR 970003587A
Authority
KR
South Korea
Prior art keywords
polishing
circuit board
forming method
semiconductor circuit
preliminary semiconductor
Prior art date
Application number
KR1019960013586A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970003587A publication Critical patent/KR970003587A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
KR1019960013586A 1995-06-26 1996-04-30 연마를 위한 예비형 반도체 회로기판의 성형 방법 KR970003587A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49451095A 1995-06-26 1995-06-26
US08/512,050 US5968849A (en) 1995-06-26 1995-08-07 Method for pre-shaping a semiconductor substrate for polishing and structure

Publications (1)

Publication Number Publication Date
KR970003587A true KR970003587A (ko) 1997-01-28

Family

ID=27051436

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960013586A KR970003587A (ko) 1995-06-26 1996-04-30 연마를 위한 예비형 반도체 회로기판의 성형 방법

Country Status (5)

Country Link
US (1) US5968849A (ko)
EP (1) EP0750967A3 (ko)
JP (1) JPH0917757A (ko)
KR (1) KR970003587A (ko)
TW (1) TW357405B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10072734B2 (en) 2014-05-27 2018-09-11 Scania Cv Ab Gearbox for vehicles and vehicle, comprising such a gearbox

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11302878A (ja) * 1998-04-21 1999-11-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法，ウエハ平坦化システム及びウエハ
DE19841473A1 (de) * 1998-09-10 2000-03-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer hochebenen Halbleiterscheibe
JP2000124235A (ja) * 1998-10-16 2000-04-28 Oki Electric Ind Co Ltd 樹脂封止半導体装置
US6162702A (en) * 1999-06-17 2000-12-19 Intersil Corporation Self-supported ultra thin silicon wafer process
DE102005043657B4 (de) * 2005-09-13 2011-12-15 Infineon Technologies Ag Chipmodul, Verfahren zur Verkapselung eines Chips und Verwendung eines Verkapselungsmaterials
DE102009037281B4 (de) * 2009-08-12 2013-05-08 Siltronic Ag Verfahren zur Herstellung einer polierten Halbleiterscheibe
US8602482B2 (en) * 2011-03-30 2013-12-10 GM Global Technology Operations LLC Closure assembly and method of manufacturing same
RU2536328C2 (ru) * 2013-04-01 2014-12-20 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Способ утоньшения фоточувствительного слоя матричного фотоприемника
KR101898903B1 (ko) 2014-05-27 2018-09-14 스카니아 씨브이 악티에볼라그 차량용 기어박스 및 기어박스를 포함하는 차량
CN110962039A (zh) * 2018-09-29 2020-04-07 康宁股份有限公司 载体晶片和形成载体晶片的方法
CN110010458B (zh) * 2019-04-01 2021-08-27 徐州鑫晶半导体科技有限公司 控制半导体晶圆片表面形貌的方法和半导体晶片

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865125A (en) * 1954-11-22 1958-12-23 Turco Products Inc Apparatus for selectively contouring a metal part by etching
DE1621510A1 (de) * 1967-03-23 1971-04-29 Siemens Ag Loesungsmittelgemisch mit Salpetersaeure und Flusssaeure zum nasschemischen AEtzen von Silizium
JPS4936792B1 (ko) * 1970-10-15 1974-10-03
US3914846A (en) * 1972-06-15 1975-10-28 Us Navy High density InSb PV IR detectors
US3964957A (en) * 1973-12-19 1976-06-22 Monsanto Company Apparatus for processing semiconductor wafers
US3977926A (en) * 1974-12-20 1976-08-31 Western Electric Company, Inc. Methods for treating articles
US4251317A (en) * 1979-04-30 1981-02-17 Fairchild Camera And Instrument Corporation Method of preventing etch masking during wafer etching
JPS6056868A (ja) * 1983-09-08 1985-04-02 Nec Corp 研摩装置
US4579760A (en) * 1985-01-08 1986-04-01 International Business Machines Corporation Wafer shape and method of making same
JPS6239173A (ja) * 1985-08-14 1987-02-20 Nec Corp ウエハ研摩装置
FR2625190A1 (fr) * 1987-12-23 1989-06-30 Trt Telecom Radio Electr Procede de metallisation d'un substrat en silice, quartz, verre, ou en saphir et substrat obtenu par ce procede
US4940507A (en) * 1989-10-05 1990-07-10 Motorola Inc. Lapping means and method
EP0579298B1 (en) * 1992-06-15 1997-09-03 Koninklijke Philips Electronics N.V. Method of manufacturing a plate having a plane main surface, method of manufacturing a plate having parallel main surfaces, and device suitable for implementing said methods
DE4224395A1 (de) * 1992-07-23 1994-01-27 Wacker Chemitronic Halbleiterscheiben mit definiert geschliffener Verformung und Verfahren zu ihrer Herstellung
JP2910507B2 (ja) * 1993-06-08 1999-06-23 信越半導体株式会社 半導体ウエーハの製造方法
JPH08274050A (ja) * 1995-03-29 1996-10-18 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10072734B2 (en) 2014-05-27 2018-09-11 Scania Cv Ab Gearbox for vehicles and vehicle, comprising such a gearbox

Also Published As

Publication number Publication date
US5968849A (en) 1999-10-19
EP0750967A3 (en) 1998-05-13
TW357405B (en) 1999-05-01
JPH0917757A (ja) 1997-01-17
EP0750967A2 (en) 1997-01-02

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E801 Decision on dismissal of amendment
E601 Decision to refuse application