JP3911929B2 - 液晶表示装置の製造方法 - Google Patents
液晶表示装置の製造方法 Download PDFInfo
- Publication number
- JP3911929B2 JP3911929B2 JP30277899A JP30277899A JP3911929B2 JP 3911929 B2 JP3911929 B2 JP 3911929B2 JP 30277899 A JP30277899 A JP 30277899A JP 30277899 A JP30277899 A JP 30277899A JP 3911929 B2 JP3911929 B2 JP 3911929B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid crystal
- layer
- thin film
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 234
- 239000010410 layer Substances 0.000 claims description 168
- 239000011159 matrix material Substances 0.000 claims description 111
- 238000000034 method Methods 0.000 claims description 91
- 239000010409 thin film Substances 0.000 claims description 64
- 230000008569 process Effects 0.000 claims description 39
- 230000010287 polarization Effects 0.000 claims description 31
- 239000004033 plastic Substances 0.000 claims description 14
- 229920003023 plastic Polymers 0.000 claims description 14
- 239000010408 film Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 33
- 239000000853 adhesive Substances 0.000 description 28
- 230000001070 adhesive effect Effects 0.000 description 28
- 229920005989 resin Polymers 0.000 description 21
- 239000011347 resin Substances 0.000 description 21
- 239000012790 adhesive layer Substances 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000000049 pigment Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004043 dyeing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000001055 blue pigment Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30277899A JP3911929B2 (ja) | 1999-10-25 | 1999-10-25 | 液晶表示装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30277899A JP3911929B2 (ja) | 1999-10-25 | 1999-10-25 | 液晶表示装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001125138A JP2001125138A (ja) | 2001-05-11 |
| JP2001125138A5 JP2001125138A5 (enExample) | 2005-04-07 |
| JP3911929B2 true JP3911929B2 (ja) | 2007-05-09 |
Family
ID=17913016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30277899A Expired - Fee Related JP3911929B2 (ja) | 1999-10-25 | 1999-10-25 | 液晶表示装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3911929B2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8415208B2 (en) | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| TW554398B (en) | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
| TW558743B (en) | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| US6953735B2 (en) | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
| JP4186502B2 (ja) * | 2002-04-22 | 2008-11-26 | ソニー株式会社 | 薄膜デバイスの製造方法、薄膜デバイスおよび表示装置 |
| JP3965562B2 (ja) * | 2002-04-22 | 2007-08-29 | セイコーエプソン株式会社 | デバイスの製造方法、デバイス、電気光学装置及び電子機器 |
| EP1363319B1 (en) | 2002-05-17 | 2009-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of transferring an object and method of manufacturing a semiconductor device |
| US7183582B2 (en) * | 2002-05-29 | 2007-02-27 | Seiko Epson Coporation | Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus |
| KR101005569B1 (ko) | 2002-12-27 | 2011-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조방법 |
| JP4373085B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
| KR101033797B1 (ko) | 2003-01-15 | 2011-05-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법 |
| JP4151420B2 (ja) | 2003-01-23 | 2008-09-17 | セイコーエプソン株式会社 | デバイスの製造方法 |
| JP2004349513A (ja) | 2003-05-22 | 2004-12-09 | Seiko Epson Corp | 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器 |
| FR2870988B1 (fr) * | 2004-06-01 | 2006-08-11 | Michel Bruel | Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation |
| JP2004341557A (ja) * | 2004-08-23 | 2004-12-02 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2006120726A (ja) | 2004-10-19 | 2006-05-11 | Seiko Epson Corp | 薄膜装置の製造方法、電気光学装置、及び電子機器 |
| US7972910B2 (en) | 2005-06-03 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of integrated circuit device including thin film transistor |
| US7820495B2 (en) | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4610515B2 (ja) * | 2006-04-21 | 2011-01-12 | 株式会社半導体エネルギー研究所 | 剥離方法 |
| JP4894415B2 (ja) * | 2006-08-25 | 2012-03-14 | 凸版印刷株式会社 | 液晶表示装置の製造方法 |
| US7968388B2 (en) | 2007-08-31 | 2011-06-28 | Seiko Epson Corporation | Thin-film device, method for manufacturing thin-film device, and display |
| JP2016038490A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 表示パネル、表示モジュール、及び電子機器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2929704B2 (ja) * | 1990-11-01 | 1999-08-03 | 松下電器産業株式会社 | 液晶表示用基板の製造方法 |
| FR2679057B1 (fr) * | 1991-07-11 | 1995-10-20 | Morin Francois | Structure d'ecran a cristal liquide, a matrice active et a haute definition. |
| JPH09197405A (ja) * | 1995-11-14 | 1997-07-31 | Sharp Corp | 視角特性制御型液晶表示装置 |
| JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
| JPH11243209A (ja) * | 1998-02-25 | 1999-09-07 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器 |
-
1999
- 1999-10-25 JP JP30277899A patent/JP3911929B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001125138A (ja) | 2001-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3911929B2 (ja) | 液晶表示装置の製造方法 | |
| JP3738530B2 (ja) | カラー表示装置 | |
| JP3738798B2 (ja) | アクティブマトリクス基板の製造方法及び液晶パネルの製造方法 | |
| JP5620921B2 (ja) | プラスチック基板を有する電子デバイス及びその製造方法 | |
| KR101287478B1 (ko) | 산화물 박막트랜지스터를 구비한 표시소자 및 그 제조방법 | |
| JP4363723B2 (ja) | 液晶表示装置 | |
| KR100887671B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
| KR101258676B1 (ko) | 액정 표시장치 및 그의 제작방법 | |
| JP3809739B2 (ja) | フィルタ付き表示装置の製造方法 | |
| KR100652052B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
| JPH1068956A (ja) | 液晶表示素子及びその製造方法 | |
| JP5055849B2 (ja) | 表示装置、有機薄膜トランジスタの製造方法 | |
| JP2001166300A (ja) | バックライト内蔵型液晶表示装置及びその製造方法 | |
| KR100569202B1 (ko) | 가요성 전기 광학 장치 및 그 제조 방법 | |
| JP3059049B2 (ja) | 液晶電気光学装置及びその製造方法 | |
| KR100774258B1 (ko) | 액정표시장치용 잉크젯 방식 스페이서 | |
| KR101023292B1 (ko) | 액정표시장치 제조방법 | |
| KR101753182B1 (ko) | 도전성 잉크를 이용한 어레이 기판의 제조 방법 | |
| KR20080001110A (ko) | 액정표시소자 및 그 제조방법 | |
| JP3924992B2 (ja) | カラーフィルタ及びそのカラーフィルタを備えた電気光学装置 | |
| JPH10333135A (ja) | 液晶表示素子 | |
| JP4647434B2 (ja) | 液晶表示装置用電極基板とその製造方法及び液晶表示装置 | |
| KR101742125B1 (ko) | 전기영동 표시소자 제조방법 | |
| KR20130057594A (ko) | 횡전계형 액정표시장치용 어레이기판의 제조방법 | |
| KR20070001505A (ko) | 액정패널 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040527 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040527 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060811 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060912 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061109 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070109 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070122 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110209 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110209 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120209 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130209 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130209 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |