JP3909818B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP3909818B2
JP3909818B2 JP2001346121A JP2001346121A JP3909818B2 JP 3909818 B2 JP3909818 B2 JP 3909818B2 JP 2001346121 A JP2001346121 A JP 2001346121A JP 2001346121 A JP2001346121 A JP 2001346121A JP 3909818 B2 JP3909818 B2 JP 3909818B2
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JP
Japan
Prior art keywords
group
acid
fluorine atom
substituted
resist composition
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JP2001346121A
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English (en)
Japanese (ja)
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JP2003149800A (ja
JP2003149800A5 (enrdf_load_stackoverflow
Inventor
表 高橋
昭一郎 安波
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2001346121A priority Critical patent/JP3909818B2/ja
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Publication of JP2003149800A5 publication Critical patent/JP2003149800A5/ja
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Expired - Lifetime legal-status Critical Current

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  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001346121A 2001-11-12 2001-11-12 ポジ型レジスト組成物 Expired - Lifetime JP3909818B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001346121A JP3909818B2 (ja) 2001-11-12 2001-11-12 ポジ型レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001346121A JP3909818B2 (ja) 2001-11-12 2001-11-12 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003149800A JP2003149800A (ja) 2003-05-21
JP2003149800A5 JP2003149800A5 (enrdf_load_stackoverflow) 2005-04-07
JP3909818B2 true JP3909818B2 (ja) 2007-04-25

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Family Applications (1)

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JP2001346121A Expired - Lifetime JP3909818B2 (ja) 2001-11-12 2001-11-12 ポジ型レジスト組成物

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JP (1) JP3909818B2 (enrdf_load_stackoverflow)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4399192B2 (ja) 2003-06-03 2010-01-13 富士フイルム株式会社 感光性組成物
JP4491335B2 (ja) * 2004-02-16 2010-06-30 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP2005275072A (ja) * 2004-03-25 2005-10-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7541131B2 (en) 2005-02-18 2009-06-02 Fujifilm Corporation Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
JP4505357B2 (ja) 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4617252B2 (ja) * 2005-12-22 2011-01-19 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4958584B2 (ja) * 2006-02-28 2012-06-20 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4996898B2 (ja) * 2006-03-27 2012-08-08 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
US7851130B2 (en) 2006-09-19 2010-12-14 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition
US7718344B2 (en) 2006-09-29 2010-05-18 Fujifilm Corporation Resist composition and pattern forming method using the same
JP5066405B2 (ja) * 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、x線又はeuv用レジスト組成物及び該組成物を用いたパターン形成方法
JP2009053665A (ja) * 2007-08-02 2009-03-12 Fujifilm Corp 感光性組成物及び該感光性組成物を用いたパターン形成方法
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP5763433B2 (ja) * 2010-06-29 2015-08-12 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP5658924B2 (ja) 2010-06-29 2015-01-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜及びパターン形成方法
JP5953670B2 (ja) * 2010-08-27 2016-07-20 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
KR101651162B1 (ko) * 2010-12-24 2016-08-25 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 이 조성물을 사용한 감활성광선성 또는 감방사선성 막 및 패턴형성방법
JP5746907B2 (ja) * 2011-04-28 2015-07-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP5812030B2 (ja) * 2013-03-13 2015-11-11 信越化学工業株式会社 スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
JP5789705B2 (ja) * 2014-06-16 2015-10-07 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
CN107207456B (zh) 2015-02-02 2021-05-04 巴斯夫欧洲公司 潜酸及其用途
US20160306278A1 (en) * 2015-04-20 2016-10-20 Tokyo Ohka Kogyo Co., Ltd. Chemical for photolithography with improved liquid transfer property and resist composition comprising the same
JP7284622B2 (ja) * 2018-04-25 2023-05-31 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL96545C (enrdf_load_stackoverflow) * 1954-03-12 1900-01-01
GB8333901D0 (en) * 1983-12-20 1984-02-01 Minnesota Mining & Mfg Radiationsensitive compositions
JP3300089B2 (ja) * 1993-02-15 2002-07-08 クラリアント インターナショナル リミテッド ポジ型放射感応性混合物
JP3778391B2 (ja) * 1997-03-31 2006-05-24 富士写真フイルム株式会社 ポジ型感光性組成物
JP2000053601A (ja) * 1998-08-07 2000-02-22 Toyo Gosei Kogyo Kk 新規オニウム塩およびそれを含有する感放射性樹脂組成物

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JP2003149800A (ja) 2003-05-21

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