JP3908153B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3908153B2
JP3908153B2 JP2002333013A JP2002333013A JP3908153B2 JP 3908153 B2 JP3908153 B2 JP 3908153B2 JP 2002333013 A JP2002333013 A JP 2002333013A JP 2002333013 A JP2002333013 A JP 2002333013A JP 3908153 B2 JP3908153 B2 JP 3908153B2
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Prior art keywords
laser
semiconductor film
film
laser beam
substrate
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Expired - Fee Related
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JP2002333013A
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Japanese (ja)
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JP2003218058A5 (enExample
JP2003218058A (ja
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002333013A priority Critical patent/JP3908153B2/ja
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Publication of JP2003218058A5 publication Critical patent/JP2003218058A5/ja
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2002333013A 2001-11-16 2002-11-18 半導体装置の作製方法 Expired - Fee Related JP3908153B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002333013A JP3908153B2 (ja) 2001-11-16 2002-11-18 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-351953 2001-11-16
JP2001351953 2001-11-16
JP2002333013A JP3908153B2 (ja) 2001-11-16 2002-11-18 半導体装置の作製方法

Related Parent Applications (1)

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JP2002332594A Division JP3883952B2 (ja) 2001-11-16 2002-11-15 レーザ照射装置

Related Child Applications (1)

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JP2006329103A Division JP4762121B2 (ja) 2001-11-16 2006-12-06 レーザ照射方法、及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003218058A JP2003218058A (ja) 2003-07-31
JP2003218058A5 JP2003218058A5 (enExample) 2005-12-02
JP3908153B2 true JP3908153B2 (ja) 2007-04-25

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JP2002333013A Expired - Fee Related JP3908153B2 (ja) 2001-11-16 2002-11-18 半導体装置の作製方法

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JP (1) JP3908153B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4761734B2 (ja) * 2003-08-15 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100514996B1 (ko) * 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
JP5072197B2 (ja) * 2004-06-18 2012-11-14 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP2007165716A (ja) 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及び結晶化方法
JP2008085317A (ja) * 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 結晶性半導体膜、及び半導体装置の作製方法
JP5644033B2 (ja) * 2011-02-07 2014-12-24 株式会社ブイ・テクノロジー マイクロレンズアレイを使用したレーザ処理装置及びレーザ処理方法

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JP2003218058A (ja) 2003-07-31

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