JP3905870B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP3905870B2
JP3905870B2 JP2003285125A JP2003285125A JP3905870B2 JP 3905870 B2 JP3905870 B2 JP 3905870B2 JP 2003285125 A JP2003285125 A JP 2003285125A JP 2003285125 A JP2003285125 A JP 2003285125A JP 3905870 B2 JP3905870 B2 JP 3905870B2
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JP
Japan
Prior art keywords
frequency
plasma
lower electrode
power source
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003285125A
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English (en)
Japanese (ja)
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JP2005056997A (ja
Inventor
務 里吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003285125A priority Critical patent/JP3905870B2/ja
Priority to TW093118870A priority patent/TW200507104A/zh
Priority to KR1020040057249A priority patent/KR100702726B1/ko
Priority to CNB2004100702424A priority patent/CN100477104C/zh
Publication of JP2005056997A publication Critical patent/JP2005056997A/ja
Application granted granted Critical
Publication of JP3905870B2 publication Critical patent/JP3905870B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
JP2003285125A 2003-08-01 2003-08-01 プラズマ処理装置 Expired - Lifetime JP3905870B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003285125A JP3905870B2 (ja) 2003-08-01 2003-08-01 プラズマ処理装置
TW093118870A TW200507104A (en) 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus
KR1020040057249A KR100702726B1 (ko) 2003-08-01 2004-07-22 플라즈마 에칭방법 및 플라즈마 처리장치
CNB2004100702424A CN100477104C (zh) 2003-08-01 2004-07-30 等离子体处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003285125A JP3905870B2 (ja) 2003-08-01 2003-08-01 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006244588A Division JP4646880B2 (ja) 2006-09-08 2006-09-08 プラズマエッチング方法及びプラズマエッチング装置

Publications (2)

Publication Number Publication Date
JP2005056997A JP2005056997A (ja) 2005-03-03
JP3905870B2 true JP3905870B2 (ja) 2007-04-18

Family

ID=34364864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003285125A Expired - Lifetime JP3905870B2 (ja) 2003-08-01 2003-08-01 プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP3905870B2 (zh)
KR (1) KR100702726B1 (zh)
CN (1) CN100477104C (zh)
TW (1) TW200507104A (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879185B2 (en) * 2003-12-18 2011-02-01 Applied Materials, Inc. Dual frequency RF match
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4515950B2 (ja) * 2005-03-31 2010-08-04 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法およびコンピュータ記憶媒体
CN100367829C (zh) * 2005-12-08 2008-02-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体激励方法
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
CN101207034B (zh) * 2006-12-20 2010-05-19 北京北方微电子基地设备工艺研究中心有限责任公司 腔室上盖及包含该上盖的反应腔室
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8450635B2 (en) 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP4905304B2 (ja) * 2007-09-10 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5474291B2 (ja) 2007-11-05 2014-04-16 株式会社アルバック アッシング装置
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
CN102438389B (zh) * 2010-09-29 2013-06-05 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
CN102694525B (zh) * 2011-03-23 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 双频滤波装置及其处理方法和半导体设备
US8420545B2 (en) * 2011-05-23 2013-04-16 Nanya Technology Corporation Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
CN103187943B (zh) * 2011-12-28 2017-02-08 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
US10410836B2 (en) * 2017-02-22 2019-09-10 Lam Research Corporation Systems and methods for tuning to reduce reflected power in multiple states
KR102330944B1 (ko) * 2018-01-29 2021-12-01 가부시키가이샤 알박 반응성 이온 에칭 장치
KR102223875B1 (ko) * 2019-10-30 2021-03-05 주식회사 뉴파워 프라즈마 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치

Also Published As

Publication number Publication date
TWI311782B (zh) 2009-07-01
CN100477104C (zh) 2009-04-08
KR100702726B1 (ko) 2007-04-03
JP2005056997A (ja) 2005-03-03
KR20050016012A (ko) 2005-02-21
TW200507104A (en) 2005-02-16
CN1581445A (zh) 2005-02-16

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