JP3895884B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3895884B2
JP3895884B2 JP08178699A JP8178699A JP3895884B2 JP 3895884 B2 JP3895884 B2 JP 3895884B2 JP 08178699 A JP08178699 A JP 08178699A JP 8178699 A JP8178699 A JP 8178699A JP 3895884 B2 JP3895884 B2 JP 3895884B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
back surface
external connection
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP08178699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000277542A5 (enExample
JP2000277542A (ja
Inventor
治雄 兵藤
茂夫 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP08178699A priority Critical patent/JP3895884B2/ja
Publication of JP2000277542A publication Critical patent/JP2000277542A/ja
Publication of JP2000277542A5 publication Critical patent/JP2000277542A5/ja
Application granted granted Critical
Publication of JP3895884B2 publication Critical patent/JP3895884B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
JP08178699A 1999-03-25 1999-03-25 半導体装置 Expired - Lifetime JP3895884B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP08178699A JP3895884B2 (ja) 1999-03-25 1999-03-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08178699A JP3895884B2 (ja) 1999-03-25 1999-03-25 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004285690A Division JP4017625B2 (ja) 2004-09-30 2004-09-30 半導体装置の製造方法
JP2006311131A Division JP2007073987A (ja) 2006-11-17 2006-11-17 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2000277542A JP2000277542A (ja) 2000-10-06
JP2000277542A5 JP2000277542A5 (enExample) 2005-06-23
JP3895884B2 true JP3895884B2 (ja) 2007-03-22

Family

ID=13756181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08178699A Expired - Lifetime JP3895884B2 (ja) 1999-03-25 1999-03-25 半導体装置

Country Status (1)

Country Link
JP (1) JP3895884B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6744124B1 (en) * 1999-12-10 2004-06-01 Siliconix Incorporated Semiconductor die package including cup-shaped leadframe
US7595547B1 (en) 2005-06-13 2009-09-29 Vishay-Siliconix Semiconductor die package including cup-shaped leadframe
JP2002252318A (ja) 2001-02-27 2002-09-06 Nec Kansai Ltd チップ型半導体装置
JP3942500B2 (ja) 2002-07-02 2007-07-11 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3853263B2 (ja) * 2002-07-08 2006-12-06 Ｎｅｃエレクトロニクス株式会社 半導体装置
DE10249205B3 (de) * 2002-10-22 2004-08-05 Siemens Ag Leistungsbauelementanordnung zur mechatronischen Integration von Leistungsbauelementen
DE10249206B3 (de) * 2002-10-22 2004-07-01 Siemens Ag Verfahren zum Zusammenbau eines Leistungsbauelements
US6841865B2 (en) * 2002-11-22 2005-01-11 International Rectifier Corporation Semiconductor device having clips for connecting to external elements
JP4222092B2 (ja) 2003-05-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体ウェハ、半導体装置および半導体装置の製造方法
US20070215997A1 (en) * 2006-03-17 2007-09-20 Martin Standing Chip-scale package
EP4044226A1 (en) * 2021-02-16 2022-08-17 Nexperia B.V. A semiconductor device and a method of manufacturing of a semiconductor device

Also Published As

Publication number Publication date
JP2000277542A (ja) 2000-10-06

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