JP3857236B2 - 高繰返しレートｕｖエキシマーレーザ - Google Patents

高繰返しレートｕｖエキシマーレーザ Download PDF

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Publication number
JP3857236B2
JP3857236B2 JP2002570361A JP2002570361A JP3857236B2 JP 3857236 B2 JP3857236 B2 JP 3857236B2 JP 2002570361 A JP2002570361 A JP 2002570361A JP 2002570361 A JP2002570361 A JP 2002570361A JP 3857236 B2 JP3857236 B2 JP 3857236B2
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JP
Japan
Prior art keywords
laser beam
laser
fluoride
optical
window
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002570361A
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English (en)
Japanese (ja)
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JP2004523122A (ja
JP2004523122A5 (enExample
Inventor
ダブリュ スパロー，ロバート
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Corning Inc
Original Assignee
Corning Inc
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Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of JP2004523122A publication Critical patent/JP2004523122A/ja
Publication of JP2004523122A5 publication Critical patent/JP2004523122A5/ja
Application granted granted Critical
Publication of JP3857236B2 publication Critical patent/JP3857236B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H01S3/0346—Protection of windows or mirrors against deleterious effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002570361A 2001-03-02 2002-02-25 高繰返しレートｕｖエキシマーレーザ Expired - Fee Related JP3857236B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27281401P 2001-03-02 2001-03-02
PCT/US2002/005932 WO2002071558A1 (en) 2001-03-02 2002-02-25 High repetition rate uv excimer laser

Publications (3)

Publication Number Publication Date
JP2004523122A JP2004523122A (ja) 2004-07-29
JP2004523122A5 JP2004523122A5 (enExample) 2005-12-22
JP3857236B2 true JP3857236B2 (ja) 2006-12-13

Family

ID=23041411

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2002570361A Expired - Fee Related JP3857236B2 (ja) 2001-03-02 2002-02-25 高繰返しレートｕｖエキシマーレーザ
JP2002572450A Pending JP2004534381A (ja) 2001-03-02 2002-03-01 高繰返しレートエキシマーレーザ結晶光学素子及び＜２００ｎｍＵＶ透過フッ化物光学結晶の作成方法
JP2002570358A Pending JP2004523913A (ja) 2001-03-02 2002-03-01 高繰返しレートエキシマーレーザシステム

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2002572450A Pending JP2004534381A (ja) 2001-03-02 2002-03-01 高繰返しレートエキシマーレーザ結晶光学素子及び＜２００ｎｍＵＶ透過フッ化物光学結晶の作成方法
JP2002570358A Pending JP2004523913A (ja) 2001-03-02 2002-03-01 高繰返しレートエキシマーレーザシステム

Country Status (8)

Country Link
US (2) US20020122450A1 (enExample)
EP (3) EP1371119A4 (enExample)
JP (3) JP3857236B2 (enExample)
KR (2) KR20030081482A (enExample)
CN (2) CN1507682A (enExample)
AU (2) AU2002258427A1 (enExample)
TW (1) TW569510B (enExample)
WO (3) WO2002071558A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6904073B2 (en) * 2001-01-29 2005-06-07 Cymer, Inc. High power deep ultraviolet laser with long life optics
US6801562B2 (en) * 2001-03-02 2004-10-05 Corning Incorporated High repetition rate excimer laser system
WO2003069739A1 (en) * 2002-02-13 2003-08-21 Corning Incorporated High repetition rate excimer laser system
JP2003347627A (ja) * 2002-05-29 2003-12-05 Gigaphoton Inc 紫外線レーザ装置
US20060222034A1 (en) * 2005-03-31 2006-10-05 Cymer, Inc. 6 Khz and above gas discharge laser system
EP2085824A1 (en) * 2005-09-14 2009-08-05 Carl Zeiss SMT AG Optical system of a microlithographic exposure system
JP5352321B2 (ja) * 2009-04-06 2013-11-27 ギガフォトン株式会社 露光用ガスレーザ装置
KR101810062B1 (ko) 2011-10-14 2017-12-19 삼성디스플레이 주식회사 레이저 결정화 장치 및 레이저 결정화 방법
US11763013B2 (en) 2015-08-07 2023-09-19 Workshare, Ltd. Transaction document management system and method
CN106181073A (zh) * 2016-08-25 2016-12-07 张美华 一种镭射激光钻孔机
CN108183383B (zh) * 2018-01-22 2020-03-17 中国科学院合肥物质科学研究院 一种应用于白癜风治疗的准分子激光器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227183A (ja) * 1983-06-07 1984-12-20 Hamamatsu Photonics Kk 希ガス・ハロゲン・エキシマレ−ザ装置
JPH01115897A (ja) * 1987-10-30 1989-05-09 Nippon Mining Co Ltd フッ化マグネシウム単結晶の製造方法
US5134518A (en) * 1990-07-11 1992-07-28 Bausch & Lomb Incorporated Missile windows
US5272710A (en) * 1992-09-08 1993-12-21 Hughes Aircraft Company Stress-free mounting and protection of liquid-cooled solid-state laser media
RU2041298C1 (ru) 1993-08-17 1995-08-09 Акционерное общество "Инкром" Способ выращивания кристаллов из паровой фазы
JP3071694B2 (ja) * 1996-07-30 2000-07-31 日本電気株式会社 狭帯域エキシマレーザ装置
JPH10324571A (ja) * 1997-05-23 1998-12-08 Riken Corp 二珪化モリブデン系セラミックス発熱体及びその製造方法
US6137821A (en) * 1997-06-04 2000-10-24 Cymer, Inc. Durable etalon based output coupler
JP3969865B2 (ja) * 1997-10-24 2007-09-05 キヤノン株式会社 フッ化物結晶の製造方法
US6238479B1 (en) * 1997-10-24 2001-05-29 Canon Kabushiki Kaisha Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part
JP3657800B2 (ja) * 1998-02-20 2005-06-08 株式会社リケン 二珪化モリブデン系複合セラミックス発熱体及びその製造方法
US6345065B1 (en) * 1998-06-04 2002-02-05 Lambda Physik Ag F2-laser with line selection
US6163559A (en) * 1998-06-22 2000-12-19 Cymer, Inc. Beam expander for ultraviolet lasers
JP2000034193A (ja) * 1998-07-16 2000-02-02 Nikon Corp フッ化物単結晶の熱処理方法及び製造方法
US6567450B2 (en) * 1999-12-10 2003-05-20 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
JP2000124534A (ja) * 1998-10-12 2000-04-28 Komatsu Ltd ＡｒＦエキシマレーザ装置及びその狭帯域化モジュール
JP3631063B2 (ja) * 1998-10-21 2005-03-23 キヤノン株式会社 フッ化物の精製方法及びフッ化物結晶の製造方法
US6242136B1 (en) * 1999-02-12 2001-06-05 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6587202B2 (en) * 2000-01-28 2003-07-01 Lambda Physik Ag Optical materials testing method
US6330256B1 (en) * 2000-02-01 2001-12-11 Raytheon Company Method and apparatus for non-dispersive face-cooling of multi-crystal nonlinear optical devices

Also Published As

Publication number Publication date
CN1524323A (zh) 2004-08-25
KR20030081482A (ko) 2003-10-17
EP1371119A1 (en) 2003-12-17
WO2002073244A9 (en) 2003-02-13
EP1371117A2 (en) 2003-12-17
US6768762B2 (en) 2004-07-27
WO2002071558A1 (en) 2002-09-12
WO2002071555A9 (en) 2003-12-18
CN1507682A (zh) 2004-06-23
US20030210726A1 (en) 2003-11-13
JP2004523122A (ja) 2004-07-29
AU2002258427A1 (en) 2002-09-24
CN1299406C (zh) 2007-02-07
WO2002073244A2 (en) 2002-09-19
TW569510B (en) 2004-01-01
JP2004523913A (ja) 2004-08-05
WO2002071555A2 (en) 2002-09-12
AU2002258435A1 (en) 2002-09-19
EP1449013A2 (en) 2004-08-25
EP1371117B1 (en) 2011-08-31
WO2002071555A3 (en) 2002-11-21
EP1371117A4 (en) 2006-10-11
KR20030084958A (ko) 2003-11-01
EP1449013A4 (en) 2006-09-20
KR100870330B1 (ko) 2008-11-25
US20020122450A1 (en) 2002-09-05
WO2002073244A3 (en) 2004-06-24
JP2004534381A (ja) 2004-11-11
EP1371119A4 (en) 2006-10-11

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