CN1507682A - 高重复率紫外准分子激光器 - Google Patents

高重复率紫外准分子激光器 Download PDF

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Publication number
CN1507682A
CN1507682A CNA028081544A CN02808154A CN1507682A CN 1507682 A CN1507682 A CN 1507682A CN A028081544 A CNA028081544 A CN A028081544A CN 02808154 A CN02808154 A CN 02808154A CN 1507682 A CN1507682 A CN 1507682A
Authority
CN
China
Prior art keywords
laser beam
excimer laser
laser
equal
repetition rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028081544A
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English (en)
Chinese (zh)
Inventor
Rw
R·W·斯帕罗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of CN1507682A publication Critical patent/CN1507682A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H01S3/0346—Protection of windows or mirrors against deleterious effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNA028081544A 2001-03-02 2002-02-25 高重复率紫外准分子激光器 Pending CN1507682A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27281401P 2001-03-02 2001-03-02
US60/272,814 2001-03-02

Publications (1)

Publication Number Publication Date
CN1507682A true CN1507682A (zh) 2004-06-23

Family

ID=23041411

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA028081544A Pending CN1507682A (zh) 2001-03-02 2002-02-25 高重复率紫外准分子激光器
CNB028090675A Expired - Fee Related CN1299406C (zh) 2001-03-02 2002-03-01 高重复频率准分子激光系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB028090675A Expired - Fee Related CN1299406C (zh) 2001-03-02 2002-03-01 高重复频率准分子激光系统

Country Status (8)

Country Link
US (2) US20020122450A1 (enExample)
EP (3) EP1371119A4 (enExample)
JP (3) JP3857236B2 (enExample)
KR (2) KR20030081482A (enExample)
CN (2) CN1507682A (enExample)
AU (2) AU2002258427A1 (enExample)
TW (1) TW569510B (enExample)
WO (3) WO2002071558A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6904073B2 (en) * 2001-01-29 2005-06-07 Cymer, Inc. High power deep ultraviolet laser with long life optics
US6801562B2 (en) * 2001-03-02 2004-10-05 Corning Incorporated High repetition rate excimer laser system
WO2003069739A1 (en) * 2002-02-13 2003-08-21 Corning Incorporated High repetition rate excimer laser system
JP2003347627A (ja) * 2002-05-29 2003-12-05 Gigaphoton Inc 紫外線レーザ装置
US20060222034A1 (en) * 2005-03-31 2006-10-05 Cymer, Inc. 6 Khz and above gas discharge laser system
EP2085824A1 (en) * 2005-09-14 2009-08-05 Carl Zeiss SMT AG Optical system of a microlithographic exposure system
JP5352321B2 (ja) * 2009-04-06 2013-11-27 ギガフォトン株式会社 露光用ガスレーザ装置
KR101810062B1 (ko) 2011-10-14 2017-12-19 삼성디스플레이 주식회사 레이저 결정화 장치 및 레이저 결정화 방법
US11763013B2 (en) 2015-08-07 2023-09-19 Workshare, Ltd. Transaction document management system and method
CN106181073A (zh) * 2016-08-25 2016-12-07 张美华 一种镭射激光钻孔机
CN108183383B (zh) * 2018-01-22 2020-03-17 中国科学院合肥物质科学研究院 一种应用于白癜风治疗的准分子激光器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227183A (ja) * 1983-06-07 1984-12-20 Hamamatsu Photonics Kk 希ガス・ハロゲン・エキシマレ−ザ装置
JPH01115897A (ja) * 1987-10-30 1989-05-09 Nippon Mining Co Ltd フッ化マグネシウム単結晶の製造方法
US5134518A (en) * 1990-07-11 1992-07-28 Bausch & Lomb Incorporated Missile windows
US5272710A (en) * 1992-09-08 1993-12-21 Hughes Aircraft Company Stress-free mounting and protection of liquid-cooled solid-state laser media
RU2041298C1 (ru) 1993-08-17 1995-08-09 Акционерное общество "Инкром" Способ выращивания кристаллов из паровой фазы
JP3071694B2 (ja) * 1996-07-30 2000-07-31 日本電気株式会社 狭帯域エキシマレーザ装置
JPH10324571A (ja) * 1997-05-23 1998-12-08 Riken Corp 二珪化モリブデン系セラミックス発熱体及びその製造方法
US6137821A (en) * 1997-06-04 2000-10-24 Cymer, Inc. Durable etalon based output coupler
JP3969865B2 (ja) * 1997-10-24 2007-09-05 キヤノン株式会社 フッ化物結晶の製造方法
US6238479B1 (en) * 1997-10-24 2001-05-29 Canon Kabushiki Kaisha Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part
JP3657800B2 (ja) * 1998-02-20 2005-06-08 株式会社リケン 二珪化モリブデン系複合セラミックス発熱体及びその製造方法
US6345065B1 (en) * 1998-06-04 2002-02-05 Lambda Physik Ag F2-laser with line selection
US6163559A (en) * 1998-06-22 2000-12-19 Cymer, Inc. Beam expander for ultraviolet lasers
JP2000034193A (ja) * 1998-07-16 2000-02-02 Nikon Corp フッ化物単結晶の熱処理方法及び製造方法
US6567450B2 (en) * 1999-12-10 2003-05-20 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
JP2000124534A (ja) * 1998-10-12 2000-04-28 Komatsu Ltd ＡｒＦエキシマレーザ装置及びその狭帯域化モジュール
JP3631063B2 (ja) * 1998-10-21 2005-03-23 キヤノン株式会社 フッ化物の精製方法及びフッ化物結晶の製造方法
US6242136B1 (en) * 1999-02-12 2001-06-05 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6587202B2 (en) * 2000-01-28 2003-07-01 Lambda Physik Ag Optical materials testing method
US6330256B1 (en) * 2000-02-01 2001-12-11 Raytheon Company Method and apparatus for non-dispersive face-cooling of multi-crystal nonlinear optical devices

Also Published As

Publication number Publication date
CN1524323A (zh) 2004-08-25
KR20030081482A (ko) 2003-10-17
EP1371119A1 (en) 2003-12-17
JP3857236B2 (ja) 2006-12-13
WO2002073244A9 (en) 2003-02-13
EP1371117A2 (en) 2003-12-17
US6768762B2 (en) 2004-07-27
WO2002071558A1 (en) 2002-09-12
WO2002071555A9 (en) 2003-12-18
US20030210726A1 (en) 2003-11-13
JP2004523122A (ja) 2004-07-29
AU2002258427A1 (en) 2002-09-24
CN1299406C (zh) 2007-02-07
WO2002073244A2 (en) 2002-09-19
TW569510B (en) 2004-01-01
JP2004523913A (ja) 2004-08-05
WO2002071555A2 (en) 2002-09-12
AU2002258435A1 (en) 2002-09-19
EP1449013A2 (en) 2004-08-25
EP1371117B1 (en) 2011-08-31
WO2002071555A3 (en) 2002-11-21
EP1371117A4 (en) 2006-10-11
KR20030084958A (ko) 2003-11-01
EP1449013A4 (en) 2006-09-20
KR100870330B1 (ko) 2008-11-25
US20020122450A1 (en) 2002-09-05
WO2002073244A3 (en) 2004-06-24
JP2004534381A (ja) 2004-11-11
EP1371119A4 (en) 2006-10-11

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication