US20020122450A1 - High repetition rate UV excimer laser - Google Patents
High repetition rate UV excimer laser Download PDFInfo
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- US20020122450A1 US20020122450A1 US10/087,265 US8726502A US2002122450A1 US 20020122450 A1 US20020122450 A1 US 20020122450A1 US 8726502 A US8726502 A US 8726502A US 2002122450 A1 US2002122450 A1 US 2002122450A1
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 31
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims 7
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 claims 4
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 claims 3
- 230000003287 optical effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 8
- 229910001634 calcium fluoride Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 3
- 229910001632 barium fluoride Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
- H01S3/0346—Protection of windows or mirrors against deleterious effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
Definitions
- the subject invention is directed generally to an High Repetition Rate UV Excimer Laser.
- U.S. Pat. No. 6,181,724 discloses an excimer laser.
- Laser gas is sealed in a laser chamber and energy is supplied as a result of an electrical discharge in a discharge electrode, causing the laser beam to oscillate.
- the oscillating laser beam exits through a rear window, the beam size is widened while passing through a first prism and a second prism, and then the laser beam enters a grating.
- an angle relative to the light path of the laser beam is controlled by an actuator and by oscillating the laser beam at a predetermined wavelength, a narrow band is achieved.
- a group of optical components, which are the first prism, the second prism, and the grating, is collectively called the narrow-band optics.
- the laser beam with the wavelength being controlled by the narrow-band optics, passes through a front window and a front mirror, which is a partial reflecting mirror, and part of the laser beam exits the laser chamber.
- optical components of synthetic fused silica or calcium fluoride are insufficient in durability when the power of an excimer laser is increased, and a highly accurate control of the wavelength of an High Repetition Rate UV Excimer Laser is difficult when these optical components are used.
- the present invention relates to an High Repetition Rate ( ⁇ 4 kilohertz) UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride.
- Another aspect of the present invention includes an High Repetition Rate UV Excimer Laser which includes a source for a laser beam, one or more windows which include magnesium fluoride, and a source for annealing the one or more windows.
- Yet another aspect of the present invention includes an High Repetition Rate UV Excimer Laser window which includes magnesium fluoride.
- Yet another aspect of the present invention includes a method of producing a predetermined narrow width laser beam.
- the method includes oscillating a laser beam whereby the laser beam exits a first window of a chamber, widening the laser beam through one or more prisms, controlling the laser beam to a predetermined narrow width, and passing the predetermined narrow width laser beam through a second window of the chamber, where the first and second windows of the chamber include magnesium fluoride.
- FIG. 1 illustrates an High Repetition Rate UV Excimer Laser according to one embodiment of the present invention.
- FIG. 2 illustrates an High Repetition Rate UV Excimer Laser according to an alternative embodiment of the present invention.
- FIG. 3 illustrates an High Repetition Rate UV Excimer Laser according to an alternative embodiment of the present invention.
- the present invention relates to an excimer laser which includes a source of a laser beam and one or more windows which include magnesium fluoride.
- an excimer laser operates as follows.
- Laser gas is sealed in a laser chamber and energy is supplied to the gas by an electrical discharge in a discharge electrode. This causes the laser beam to oscillate.
- the oscillating laser beam exits the laser chamber through a rear window, the size of the laser beam is widened while passing through prisms, and the laser beam enters a grating.
- an angle relative to the light path of the laser beam is controlled by an actuator and by oscillating a predetermined wavelength a narrow band width is achieved.
- the laser beam, with the controlled wavelength passes through a front window and a front mirror and part of the laser beam exits the laser chamber.
- FIG. 1 illustrates one embodiment of an High Repetition Rate UV Excimer Laser of the present invention.
- High Repetition Rate UV Excimer Laser device 10 includes a plurality of prisms such as first and second (and optionally third) prisms 12 , first mirror 13 , second mirror 15 , a grating 14 , and first 16 and second 18 windows.
- First window 16 and second window 18 in laser chamber 17 form an ordinary Brewster angle relative to a laser beam 11 in order to reduce energy loss.
- Components such as plurality of prisms 12 , first mirror 13 and second mirror 15 , and first window 16 and second window 18 are made of a fluoride optical material, such as calcium fluoride, barium fluoride or magnesium fluoride. In one embodiment, these components are made of magnesium fluoride. In an alternative embodiment, first window 16 and second window 18 are made of magnesium fluoride and other components, such as plurality of prisms 12 , first mirror 13 and second mirror 15 are made of other materials, such as calcium fluoride.
- Another aspect of the present invention includes a method of producing a predetermined narrow width laser beam.
- the method includes oscillating a laser beam where the laser beam exits a first window of a chamber, widening the laser beam through one or more prisms, controlling the laser beam to a predetermined narrow width, and passing the predetermined narrow width laser beam through a second window of the chamber, where the first and second windows of the chamber include magnesium fluoride.
- laser gases such as Ar, Kr, Ne and/or F
- laser gases are sealed in laser chamber 17 and energy is supplied to the laser gas by an electrical discharge in a discharge electrode (not shown). This causes laser beam 11 to oscillate.
- Oscillating laser beam 11 exits the laser chamber 17 through a rear window 16 .
- Laser beam 11 passes through prisms 12 , is reflected by second mirror 15 and grating 14 .
- first mirror 15 an angle relative to the light path of laser beam 11 is controlled by an actuator.
- oscillating laser beam 11 at predetermined wavelength a narrow band width is achieved for laser beam 11 .
- Laser beam 11 is totally reflected by grating 14 and second mirror 15 causing laser beam 11 to reverse its original path and exit chamber 17 from front window 18 and exit from first mirror 13 .
- FIG. 2 is a second embodiment of the present invention.
- High Repetition Rate UV Excimer Laser device 20 includes a plurality of prisms such as first and second prisms 22 , mirror 25 , grating 24 , and first 26 and second 28 windows.
- First window 26 and second window 28 in laser chamber 27 form an ordinary Brewster angle relative to a laser beam 21 in order to reduce energy loss.
- laser beam 21 is partially reflected by mirror 25 , which is a partially reflecting mirror, and part of laser beam 21 exits laser chamber 27 .
- Components such as plurality of prisms 22 , second mirror 25 , and first window 26 and second window 28 are made of a fluoride optical material, such as calcium fluoride, barium fluoride or magnesium fluoride. In one embodiment, these components are made of magnesium fluoride. In an alternative embodiment, first window 26 and second window 28 are made of magnesium fluoride and other components, such as plurality of prisms 22 and mirror 25 are made of other materials, such as calcium fluoride.
- Another aspect of the present invention includes an High Repetition Rate UV Excimer Laser window made of magnesium fluoride.
- the laser windows of the present invention made of magnesium fluoride maintain durability over a long operational life of the High Repetition Rate UV Excimer Laser.
- “maintain durability” means that the magnesium fluoride windows have no perceptible induced absorption.
- the magnesium fluoride windows maintain durability for a laser having a output of greater than or equal to 10 mJ and a repetition rate of greater than or about 4 KHz.
- the magnesium fluoride windows of the present invention maintain durability for a laser having a output of greater than or equal to 10 mJ and a repetition rate of greater than or about 4 KHz for over 500 million pulses and, optionally, for over 900 million pulses.
- Another aspect of the present invention includes an excimer laser which includes a source for a laser beam, one or more windows which include magnesium fluoride, and a source for annealing the one or more windows.
- FIG. 3 shows an embodiment of the present invention which includes a source for annealing the windows of the laser chamber.
- excimer laser device 30 includes a plurality of prisms such as first and second (and optionally third) prisms 32 , first mirror 33 , second mirror 35 , a grating 14 , and first 16 and second 18 windows.
- First window 36 and second window 38 in laser chamber 37 form an ordinary Brewster angle relative to a laser beam 31 in order to reduce energy loss.
- Components, such as plurality of prisms 32 , first mirror 33 and second mirror 35 , and first window 36 and second window 38 are made of a fluoride optical material, such as calcium fluoride, barium fluoride or magnesium fluoride.
- first window 36 and second window 38 are made of magnesium fluoride and other components, such as plurality of prisms 32 , first mirror 33 and second mirror 35 are made of other materials, such as calcium fluoride.
- a first laser beam (as described above) and a second laser beam are generated by discharge electrode in laser chamber 37 .
- a second laser gas such as Ar, Kr, Ne and/or F
- Ar, Kr, Ne and/or F is sealed in laser chamber 37 and energy is supplied to the second laser gas by a second electrical discharge in a second discharge electrode (not shown).
- Oscillating laser beam 31 exits the laser chamber 37 through a rear window 36 .
- Laser beam 31 passes through prisms 32 , is reflected by second mirror 35 and grating 34 . In second mirror 35 , an angle relative to the light path of laser beam 31 is controlled by an actuator.
- laser beam 31 By oscillating laser beam 31 at predetermined wavelength, a narrow band width is achieved for laser beam 31 .
- Laser beam 31 is totally reflected by grating 34 and second mirror 35 causing laser beam 31 to reverse its original path and exit chamber 37 from front window 38 and exit from first mirror 33 .
- Second laser beam 31 is used to anneal first and second windows 38 and 36 concurrently with operation of the excimer laser.
- the windows are irradiated with second laser beam 31 with light having a wavelength of about 250 nm. This wavelength corresponds to the wavelength of the induced absorption band.
- second laser beam 31 is used either before or after operation of the excimer laser to anneal first and second windows 36 and 38 while the eximer laser is not in use.
- windows 36 and 38 are thermally annealed. Thermal annealing is accomplished by heating first and/or second windows in an environment such as an inert gas or under vacuum. Although the temperature to which the windows are heated is dependent on the level of induced absorption, a temperature of from about 200 to about 800° C. is typical.
Abstract
The invention relates to an High Repetition Rate UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include magnesium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.
Description
- The present application claims priority to U.S. Provisional Patent Application No. 60/272,814, filed Mar. 2, 2001, which is hereby incorporated by reference.
- The subject invention is directed generally to an High Repetition Rate UV Excimer Laser.
- Throughout this application various publications are referenced. The disclosures of each of these publications in their entireties are hereby incorporated by reference in this application.
- Excimer lasers have been conventionally developed for commercial use as a light source of a reducing projection and exposure device for a semiconductor manufacturing apparatus, because an excimer laser enables extremely precise work.
- Light oscillating from the excimer laser has various wavelength components and the central wavelength varies. As a result, if the light is in the as-is status, an aberration will occur when the light passes through an external optical element, such as a lens, thereby reducing the accuracy of the work. For this reason, there is a widely used art of making a narrow band, in which an excimer laser is equipped with a wavelength selecting element, such as a grating, to narrow the spectral width of the laser oscillation wavelength and to stabilize the central wavelength as a central value of the oscillation wavelength.
- U.S. Pat. No. 6,181,724 discloses an excimer laser. Laser gas is sealed in a laser chamber and energy is supplied as a result of an electrical discharge in a discharge electrode, causing the laser beam to oscillate. The oscillating laser beam exits through a rear window, the beam size is widened while passing through a first prism and a second prism, and then the laser beam enters a grating. In the grating, an angle relative to the light path of the laser beam is controlled by an actuator and by oscillating the laser beam at a predetermined wavelength, a narrow band is achieved. A group of optical components, which are the first prism, the second prism, and the grating, is collectively called the narrow-band optics. The laser beam, with the wavelength being controlled by the narrow-band optics, passes through a front window and a front mirror, which is a partial reflecting mirror, and part of the laser beam exits the laser chamber.
- Typically, synthetic fused silica or calcium fluoride is used as the material of the optical components for the excimer lasers, however, there are significant disadvantages in using these materials. In order to manufacture semiconductors efficiently in large quantities, there has been a demand to increase the power of a laser by increasing the laser oscillation pulse numbers per unit time (also called the repetition frequency or repetition rate). However, the energy density is high in the resonator of the laser, and moreover, a laser beam reciprocates in the resonator and passes through the optical components many times. For this reason, as the power of a laser becomes higher, the optical components are deteriorated as a result of even minor distortion or unevenness inside the material. Even minor deterioration of the optical components exerts a great influence on the quality of the oscillating laser beam. Thus, the optical components of synthetic fused silica or calcium fluoride are insufficient in durability when the power of an excimer laser is increased, and a highly accurate control of the wavelength of an High Repetition Rate UV Excimer Laser is difficult when these optical components are used.
- The present invention relates to an High Repetition Rate (≧4 kilohertz) UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride.
- Another aspect of the present invention includes an High Repetition Rate UV Excimer Laser which includes a source for a laser beam, one or more windows which include magnesium fluoride, and a source for annealing the one or more windows.
- Yet another aspect of the present invention includes an High Repetition Rate UV Excimer Laser window which includes magnesium fluoride.
- Yet another aspect of the present invention includes a method of producing a predetermined narrow width laser beam. The method includes oscillating a laser beam whereby the laser beam exits a first window of a chamber, widening the laser beam through one or more prisms, controlling the laser beam to a predetermined narrow width, and passing the predetermined narrow width laser beam through a second window of the chamber, where the first and second windows of the chamber include magnesium fluoride.
- These and other features and advantages of this invention will be evident from the following detailed description of preferred embodiments when read in conjunction with the accompanying drawings in which:
- FIG. 1 illustrates an High Repetition Rate UV Excimer Laser according to one embodiment of the present invention.
- FIG. 2 illustrates an High Repetition Rate UV Excimer Laser according to an alternative embodiment of the present invention.
- FIG. 3 illustrates an High Repetition Rate UV Excimer Laser according to an alternative embodiment of the present invention.
- The present invention relates to an excimer laser which includes a source of a laser beam and one or more windows which include magnesium fluoride.
- Excimer laser devices are described in U.S. Pat. Nos. 6,181,724, 6,282,221, 6,067,311 and 6,014,398, which are hereby incorporated by reference.
- Typically, an excimer laser operates as follows. Laser gas is sealed in a laser chamber and energy is supplied to the gas by an electrical discharge in a discharge electrode. This causes the laser beam to oscillate. The oscillating laser beam exits the laser chamber through a rear window, the size of the laser beam is widened while passing through prisms, and the laser beam enters a grating. In the grating, an angle relative to the light path of the laser beam is controlled by an actuator and by oscillating a predetermined wavelength a narrow band width is achieved. The laser beam, with the controlled wavelength passes through a front window and a front mirror and part of the laser beam exits the laser chamber.
- With this general view of the operation of an excimer laser in mind, FIG. 1 illustrates one embodiment of an High Repetition Rate UV Excimer Laser of the present invention. As shown in FIG. 1, High Repetition Rate UV
Excimer Laser device 10 includes a plurality of prisms such as first and second (and optionally third)prisms 12,first mirror 13,second mirror 15, agrating 14, and first 16 and second 18 windows.First window 16 andsecond window 18 inlaser chamber 17 form an ordinary Brewster angle relative to alaser beam 11 in order to reduce energy loss. Components, such as plurality ofprisms 12,first mirror 13 andsecond mirror 15, andfirst window 16 andsecond window 18 are made of a fluoride optical material, such as calcium fluoride, barium fluoride or magnesium fluoride. In one embodiment, these components are made of magnesium fluoride. In an alternative embodiment,first window 16 andsecond window 18 are made of magnesium fluoride and other components, such as plurality ofprisms 12,first mirror 13 andsecond mirror 15 are made of other materials, such as calcium fluoride. - Another aspect of the present invention includes a method of producing a predetermined narrow width laser beam. The method includes oscillating a laser beam where the laser beam exits a first window of a chamber, widening the laser beam through one or more prisms, controlling the laser beam to a predetermined narrow width, and passing the predetermined narrow width laser beam through a second window of the chamber, where the first and second windows of the chamber include magnesium fluoride.
- In use, referring to FIG. 1, laser gases (such as Ar, Kr, Ne and/or F) are sealed in
laser chamber 17 and energy is supplied to the laser gas by an electrical discharge in a discharge electrode (not shown). This causeslaser beam 11 to oscillate. Oscillatinglaser beam 11 exits thelaser chamber 17 through arear window 16.Laser beam 11 passes throughprisms 12, is reflected bysecond mirror 15 and grating 14. Infirst mirror 15, an angle relative to the light path oflaser beam 11 is controlled by an actuator. By oscillatinglaser beam 11 at predetermined wavelength, a narrow band width is achieved forlaser beam 11.Laser beam 11 is totally reflected by grating 14 andsecond mirror 15 causinglaser beam 11 to reverse its original path andexit chamber 17 fromfront window 18 and exit fromfirst mirror 13. - FIG. 2 is a second embodiment of the present invention. High Repetition Rate UV
Excimer Laser device 20 includes a plurality of prisms such as first andsecond prisms 22,mirror 25, grating 24, and first 26 and second 28 windows.First window 26 andsecond window 28 inlaser chamber 27 form an ordinary Brewster angle relative to alaser beam 21 in order to reduce energy loss. In this embodiment,laser beam 21, is partially reflected bymirror 25, which is a partially reflecting mirror, and part oflaser beam 21exits laser chamber 27. Components, such as plurality ofprisms 22,second mirror 25, andfirst window 26 andsecond window 28 are made of a fluoride optical material, such as calcium fluoride, barium fluoride or magnesium fluoride. In one embodiment, these components are made of magnesium fluoride. In an alternative embodiment,first window 26 andsecond window 28 are made of magnesium fluoride and other components, such as plurality ofprisms 22 andmirror 25 are made of other materials, such as calcium fluoride. - Another aspect of the present invention includes an High Repetition Rate UV Excimer Laser window made of magnesium fluoride.
- The laser windows of the present invention made of magnesium fluoride maintain durability over a long operational life of the High Repetition Rate UV Excimer Laser. As used herein, “maintain durability” means that the magnesium fluoride windows have no perceptible induced absorption. The magnesium fluoride windows maintain durability for a laser having a output of greater than or equal to 10 mJ and a repetition rate of greater than or about 4 KHz. Further, the magnesium fluoride windows of the present invention maintain durability for a laser having a output of greater than or equal to 10 mJ and a repetition rate of greater than or about 4 KHz for over 500 million pulses and, optionally, for over 900 million pulses.
- Another aspect of the present invention includes an excimer laser which includes a source for a laser beam, one or more windows which include magnesium fluoride, and a source for annealing the one or more windows.
- FIG. 3 shows an embodiment of the present invention which includes a source for annealing the windows of the laser chamber. As shown in FIG. 3,
excimer laser device 30 includes a plurality of prisms such as first and second (and optionally third)prisms 32,first mirror 33,second mirror 35, a grating 14, and first 16 and second 18 windows.First window 36 andsecond window 38 inlaser chamber 37 form an ordinary Brewster angle relative to alaser beam 31 in order to reduce energy loss. Components, such as plurality ofprisms 32,first mirror 33 andsecond mirror 35, andfirst window 36 andsecond window 38 are made of a fluoride optical material, such as calcium fluoride, barium fluoride or magnesium fluoride. In one embodiment, these components are made of magnesium fluoride. In an alternative embodiment,first window 36 andsecond window 38 are made of magnesium fluoride and other components, such as plurality ofprisms 32,first mirror 33 andsecond mirror 35 are made of other materials, such as calcium fluoride. - Typically, a first laser beam (as described above) and a second laser beam are generated by discharge electrode in
laser chamber 37. In use, referring to FIG. 3, a second laser gas (such as Ar, Kr, Ne and/or F) is sealed inlaser chamber 37 and energy is supplied to the second laser gas by a second electrical discharge in a second discharge electrode (not shown). This causes asecond laser beam 31 to oscillate.Oscillating laser beam 31 exits thelaser chamber 37 through arear window 36.Laser beam 31 passes throughprisms 32, is reflected bysecond mirror 35 andgrating 34. Insecond mirror 35, an angle relative to the light path oflaser beam 31 is controlled by an actuator. By oscillatinglaser beam 31 at predetermined wavelength, a narrow band width is achieved forlaser beam 31.Laser beam 31 is totally reflected by grating 34 andsecond mirror 35 causinglaser beam 31 to reverse its original path andexit chamber 37 fromfront window 38 and exit fromfirst mirror 33. -
Second laser beam 31 is used to anneal first andsecond windows second laser beam 31 with light having a wavelength of about 250 nm. This wavelength corresponds to the wavelength of the induced absorption band. Alternately,second laser beam 31 is used either before or after operation of the excimer laser to anneal first andsecond windows - Alternately,
windows - Although preferred embodiments have been depicted and described in detail herein, it will be apparent to those skilled in the relevant art that various modifications, additions, substitutions and the like can be made without departing from the spirit of the invention and these are therefore considered to be within the scope of the invention as defined in the claims which follow.
Claims (25)
1. A method of producing a ≧4 kilohertz repetition rate excimer laser beam comprising:
oscillating a laser beam whereby the laser beam exits a first magnesium fluoride crystal window of a chamber and passing the laser beam through a second magnesium fluoride crystal window of the chamber to provide a ≧4 kilohertz repetition rate excimer laser beam.
2. A method as claimed in claim 1 wherein the ≧4 killohertz repetition rate excimer laser beam has a power of greater than or equal to 10 mJ.
3. A method as claimed in claim 1 wherein the magnesium fluoride crystal windows maintain durability over 500 million pulses of the laser beam.
4. A ≧4 kilohertz repetition rate excimer laser comprising:
a ≧4 kilohertz repetition rate excimer laser beam source for producing a ≧4kilohertz repetition rate excimer laser beam and one or more magnesium fluoride crystal windows for transmitting said ≧4 kilohertz repetition rate excimer laser beam.
5. An excimer laser according to claim 4 , wherein the laser beam has a power of greater than or equal to 10 mJ.
6. An excimer laser according to claim 4 , wherein said ≧4 kilohertz repetition rate excimer laser beam source is an argon fluoride excimer laser beam source.
7. An excimer laser according to claim 4 , wherein said ≧4 kilohertz repetition rate excimer laser beam source is a krypton fluoride excimer laser beam source.
8. An excimer laser according to claim 6 further comprising: a source for annealing the one or more windows.
9. An excimer laser according to claim 4 wherein the windows maintain durability over 500 million pulses of the laser beam.
10. An excimer laser comprising:
a source for a laser beam;
one or more windows comprising magnesium fluoride crystal; and a source for annealing the one or more comprising magnesium fluoride crystal windows.
11. An excimer laser according to claim 10 , wherein the laser beam has a power of greater than or equal to 10 mJ.
12. An excimer laser according to claim 10 , wherein the laser beam has a repetition rate of greater than or equal to 4 KHz.
13. An excimer laser according to claim 10 , wherein the laser beam source is argon fluoride.
14. An excimer laser according to claim 10 , wherein the laser beam source is krypton fluoride.
15. An ≧4 kilohertz repetition rate argon fluoride excimer laser window comprising a magnesium fluoride crystal.
16. A method of producing a predetermined narrow width laser beam comprising:
oscillating a laser beam whereby the laser beam exits a first window of a chamber;
widening the laser beam through one or more prisms;
controlling the widened laser beam to a predetermined narrow width; and
passing the predetermined narrow width laser beam through a second window of the chamber, wherein the first and second windows of the chamber are comprised of magnesium fluoride.
17. A method according to claim 16 , wherein the laser beam has a power of greater than or equal to 10 mJ.
18. A method according to claim 16 , wherein the laser beam has a repetition rate of greater than or equal to 4 KHz.
19. A method according to claim 16 , further comprising pulsing the laser beam over 500 million pulses.
20. A method according to claim 19 , wherein the first and second window maintain durability.
21. A method according to claim 19 , wherein the laser beam is pulsed over 900 million pulses and the first and second window maintain durability.
22. A method according to claim 16 , further comprising:
annealing the first window.
23. A method according to claim 22 , further comprising:
annealing the second window.
24. A method according to claim 16 , wherein the laser beam source is argon fluoride.
25. A method according to claim 16 , wherein the laser beam source is krypton fluoride.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/087,265 US20020122450A1 (en) | 2001-03-02 | 2002-03-01 | High repetition rate UV excimer laser |
US10/459,012 US6768762B2 (en) | 2001-03-02 | 2003-06-10 | High repetition rate UV excimer laser |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27281401P | 2001-03-02 | 2001-03-02 | |
US10/087,265 US20020122450A1 (en) | 2001-03-02 | 2002-03-01 | High repetition rate UV excimer laser |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/459,012 Continuation US6768762B2 (en) | 2001-03-02 | 2003-06-10 | High repetition rate UV excimer laser |
Publications (1)
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US20020122450A1 true US20020122450A1 (en) | 2002-09-05 |
Family
ID=23041411
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US10/087,265 Abandoned US20020122450A1 (en) | 2001-03-02 | 2002-03-01 | High repetition rate UV excimer laser |
US10/459,012 Expired - Fee Related US6768762B2 (en) | 2001-03-02 | 2003-06-10 | High repetition rate UV excimer laser |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US10/459,012 Expired - Fee Related US6768762B2 (en) | 2001-03-02 | 2003-06-10 | High repetition rate UV excimer laser |
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US (2) | US20020122450A1 (en) |
EP (3) | EP1371119A4 (en) |
JP (3) | JP3857236B2 (en) |
KR (2) | KR20030081482A (en) |
CN (2) | CN1507682A (en) |
AU (2) | AU2002258435A1 (en) |
TW (1) | TW569510B (en) |
WO (3) | WO2002071558A1 (en) |
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US20030174754A1 (en) * | 2002-02-13 | 2003-09-18 | Pell Michael A. | High repetition rate excimer laser system |
US20030219056A1 (en) * | 2001-01-29 | 2003-11-27 | Yager Thomas A. | High power deep ultraviolet laser with long life optics |
US20030231687A1 (en) * | 2002-05-29 | 2003-12-18 | Osamu Wakabayashi | Ultraviolet laser device |
US6801562B2 (en) * | 2001-03-02 | 2004-10-05 | Corning Incorporated | High repetition rate excimer laser system |
US20060222034A1 (en) * | 2005-03-31 | 2006-10-05 | Cymer, Inc. | 6 Khz and above gas discharge laser system |
CN108183383A (en) * | 2018-01-22 | 2018-06-19 | 中国科学院合肥物质科学研究院 | A kind of excimer laser applied to therapy of vitiligo |
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JP5352321B2 (en) * | 2009-04-06 | 2013-11-27 | ギガフォトン株式会社 | Gas laser device for exposure |
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- 2002-02-25 WO PCT/US2002/005932 patent/WO2002071558A1/en not_active Application Discontinuation
- 2002-02-25 CN CNA028081544A patent/CN1507682A/en active Pending
- 2002-02-25 JP JP2002570361A patent/JP3857236B2/en not_active Expired - Fee Related
- 2002-02-25 KR KR10-2003-7011492A patent/KR20030081482A/en active IP Right Grant
- 2002-02-25 EP EP02725020A patent/EP1371119A4/en not_active Withdrawn
- 2002-03-01 JP JP2002570358A patent/JP2004523913A/en active Pending
- 2002-03-01 US US10/087,265 patent/US20020122450A1/en not_active Abandoned
- 2002-03-01 CN CNB028090675A patent/CN1299406C/en not_active Expired - Fee Related
- 2002-03-01 KR KR1020037011494A patent/KR100870330B1/en not_active IP Right Cessation
- 2002-03-01 AU AU2002258435A patent/AU2002258435A1/en not_active Abandoned
- 2002-03-01 EP EP02728371A patent/EP1449013A4/en not_active Withdrawn
- 2002-03-01 AU AU2002258427A patent/AU2002258427A1/en not_active Abandoned
- 2002-03-01 WO PCT/US2002/006235 patent/WO2002071555A2/en active Application Filing
- 2002-03-01 JP JP2002572450A patent/JP2004534381A/en active Pending
- 2002-03-01 WO PCT/US2002/006124 patent/WO2002073244A2/en active Search and Examination
- 2002-03-01 EP EP02728380A patent/EP1371117B1/en not_active Expired - Fee Related
- 2002-03-11 TW TW091104777A patent/TW569510B/en active
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US20030219056A1 (en) * | 2001-01-29 | 2003-11-27 | Yager Thomas A. | High power deep ultraviolet laser with long life optics |
US6904073B2 (en) * | 2001-01-29 | 2005-06-07 | Cymer, Inc. | High power deep ultraviolet laser with long life optics |
US6801562B2 (en) * | 2001-03-02 | 2004-10-05 | Corning Incorporated | High repetition rate excimer laser system |
US20030174754A1 (en) * | 2002-02-13 | 2003-09-18 | Pell Michael A. | High repetition rate excimer laser system |
US20030231687A1 (en) * | 2002-05-29 | 2003-12-18 | Osamu Wakabayashi | Ultraviolet laser device |
US20060222034A1 (en) * | 2005-03-31 | 2006-10-05 | Cymer, Inc. | 6 Khz and above gas discharge laser system |
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CN108183383A (en) * | 2018-01-22 | 2018-06-19 | 中国科学院合肥物质科学研究院 | A kind of excimer laser applied to therapy of vitiligo |
Also Published As
Publication number | Publication date |
---|---|
KR20030084958A (en) | 2003-11-01 |
EP1371117B1 (en) | 2011-08-31 |
WO2002071555A9 (en) | 2003-12-18 |
AU2002258435A1 (en) | 2002-09-19 |
CN1507682A (en) | 2004-06-23 |
EP1371119A4 (en) | 2006-10-11 |
WO2002071555A3 (en) | 2002-11-21 |
EP1371119A1 (en) | 2003-12-17 |
WO2002073244A9 (en) | 2003-02-13 |
AU2002258427A1 (en) | 2002-09-24 |
EP1371117A4 (en) | 2006-10-11 |
JP2004534381A (en) | 2004-11-11 |
KR20030081482A (en) | 2003-10-17 |
CN1299406C (en) | 2007-02-07 |
CN1524323A (en) | 2004-08-25 |
KR100870330B1 (en) | 2008-11-25 |
TW569510B (en) | 2004-01-01 |
JP2004523122A (en) | 2004-07-29 |
WO2002073244A3 (en) | 2004-06-24 |
US6768762B2 (en) | 2004-07-27 |
WO2002071558A1 (en) | 2002-09-12 |
EP1449013A4 (en) | 2006-09-20 |
EP1449013A2 (en) | 2004-08-25 |
JP2004523913A (en) | 2004-08-05 |
EP1371117A2 (en) | 2003-12-17 |
WO2002071555A2 (en) | 2002-09-12 |
US20030210726A1 (en) | 2003-11-13 |
WO2002073244A2 (en) | 2002-09-19 |
JP3857236B2 (en) | 2006-12-13 |
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