JP3848424B2 - シリカ薄膜の形成方法 - Google Patents

シリカ薄膜の形成方法 Download PDF

Info

Publication number
JP3848424B2
JP3848424B2 JP05688297A JP5688297A JP3848424B2 JP 3848424 B2 JP3848424 B2 JP 3848424B2 JP 05688297 A JP05688297 A JP 05688297A JP 5688297 A JP5688297 A JP 5688297A JP 3848424 B2 JP3848424 B2 JP 3848424B2
Authority
JP
Japan
Prior art keywords
hydrogen silsesquioxane
thin film
silsesquioxane resin
silica
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05688297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10237307A5 (OSRAM
JPH10237307A (ja
Inventor
基 佐々木
昭彦 小林
清隆 澤
勝利 峰
隆司 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Priority to JP05688297A priority Critical patent/JP3848424B2/ja
Priority to EP19980102981 priority patent/EP0860462A3/en
Priority to SG1998000386A priority patent/SG65053A1/en
Priority to KR1019980005694A priority patent/KR19980071624A/ko
Priority to TW087102622A priority patent/TW364184B/zh
Publication of JPH10237307A publication Critical patent/JPH10237307A/ja
Priority to US09/412,219 priority patent/US6191183B1/en
Publication of JPH10237307A5 publication Critical patent/JPH10237307A5/ja
Application granted granted Critical
Publication of JP3848424B2 publication Critical patent/JP3848424B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP05688297A 1997-02-24 1997-02-24 シリカ薄膜の形成方法 Expired - Fee Related JP3848424B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP05688297A JP3848424B2 (ja) 1997-02-24 1997-02-24 シリカ薄膜の形成方法
EP19980102981 EP0860462A3 (en) 1997-02-24 1998-02-20 Composition and method for the formation of silica thin films
SG1998000386A SG65053A1 (en) 1997-02-24 1998-02-21 Composition and method for formation of silica thin films
TW087102622A TW364184B (en) 1997-02-24 1998-02-24 Composition and method for formation of silica thin films
KR1019980005694A KR19980071624A (ko) 1997-02-24 1998-02-24 실리카 박막 형성용 조성물 및 이의 형성 방법
US09/412,219 US6191183B1 (en) 1997-02-24 1999-10-05 Method for the formation of silica thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05688297A JP3848424B2 (ja) 1997-02-24 1997-02-24 シリカ薄膜の形成方法

Publications (3)

Publication Number Publication Date
JPH10237307A JPH10237307A (ja) 1998-09-08
JPH10237307A5 JPH10237307A5 (OSRAM) 2004-12-09
JP3848424B2 true JP3848424B2 (ja) 2006-11-22

Family

ID=13039799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05688297A Expired - Fee Related JP3848424B2 (ja) 1997-02-24 1997-02-24 シリカ薄膜の形成方法

Country Status (1)

Country Link
JP (1) JP3848424B2 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4771574B2 (ja) * 2000-05-24 2011-09-14 旭化成ケミカルズ株式会社 光触媒組成物
JP4783117B2 (ja) * 2005-10-21 2011-09-28 東レ・ダウコーニング株式会社 シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置
TWI707400B (zh) * 2016-02-24 2020-10-11 日商日產化學工業股份有限公司 使用含矽組成物之半導體基板之平坦化方法

Also Published As

Publication number Publication date
JPH10237307A (ja) 1998-09-08

Similar Documents

Publication Publication Date Title
TW568958B (en) Nanoporous silica treated with siloxane polymers for ULSI applications
CN101490145B (zh) 多孔膜的前体组合物及其制备方法、多孔膜及其制作方法、以及半导体装置
KR100498834B1 (ko) 절연 박막 제조용 코팅 조성물
EP2267080A1 (en) Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film
JP3415741B2 (ja) 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
JP2004513503A (ja) ナノ多孔質シリカフィルムの表面改質用の多官能Ｓｉに基くオリゴマー・ポリマの使用
WO2005068541A1 (ja) 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
JP4305587B2 (ja) 半導体装置用の層間絶縁膜形成用材料
EP0869515B1 (en) Composition and process for forming electrically insulating thin films
JP4894153B2 (ja) 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
US20010010840A1 (en) Electrically insulating resin composition and method for forming thin film therefrom
JP4363824B2 (ja) 層間絶縁用薄膜
US6191183B1 (en) Method for the formation of silica thin films
JP3848424B2 (ja) シリカ薄膜の形成方法
JP4261297B2 (ja) 多孔質フィルムの改質方法、改質された多孔質フィルム及びその用途
JP2003115482A (ja) 絶縁膜形成用組成物
JP4344893B2 (ja) 層間絶縁膜形成用組成物の製造方法
EP1143500A2 (en) Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom
JP2004285266A (ja) 多孔質絶縁膜用組成物、その製造方法、多孔質絶縁膜およびその製造方法
JP2004051468A (ja) 絶縁性薄膜
JP3589337B2 (ja) 半導体装置およびその製造方法
JP2003165952A (ja) 絶縁薄膜製造用の塗布組成物
JP2003163210A (ja) 絶縁薄膜の製造方法
JPWO2001074957A1 (ja) 絶縁薄膜製造用の塗布組成物
JP2006059866A (ja) 絶縁膜形成組成物、絶縁膜、およびその製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060328

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060511

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060808

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060825

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090901

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100901

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110901

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120901

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130901

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees