JP3841910B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3841910B2
JP3841910B2 JP4699297A JP4699297A JP3841910B2 JP 3841910 B2 JP3841910 B2 JP 3841910B2 JP 4699297 A JP4699297 A JP 4699297A JP 4699297 A JP4699297 A JP 4699297A JP 3841910 B2 JP3841910 B2 JP 3841910B2
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JP
Japan
Prior art keywords
irradiation
laser
laser beam
thin film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4699297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1064842A (ja
JPH1064842A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
直人 楠本
節男 中嶋
聡 寺本
健司 福永
忠芳 宮本
淳 芳之内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP4699297A priority Critical patent/JP3841910B2/ja
Publication of JPH1064842A publication Critical patent/JPH1064842A/ja
Publication of JPH1064842A5 publication Critical patent/JPH1064842A5/ja
Application granted granted Critical
Publication of JP3841910B2 publication Critical patent/JP3841910B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP4699297A 1996-02-15 1997-02-14 半導体装置の作製方法 Expired - Fee Related JP3841910B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4699297A JP3841910B2 (ja) 1996-02-15 1997-02-14 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP8-53738 1996-02-15
JP5373896 1996-02-15
JP9336796 1996-03-23
JP8-93367 1996-03-23
JP17189596 1996-06-11
JP8-171895 1996-06-11
JP4699297A JP3841910B2 (ja) 1996-02-15 1997-02-14 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006098500A Division JP2006216980A (ja) 1996-02-15 2006-03-31 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1064842A JPH1064842A (ja) 1998-03-06
JPH1064842A5 JPH1064842A5 (enrdf_load_stackoverflow) 2005-01-06
JP3841910B2 true JP3841910B2 (ja) 2006-11-08

Family

ID=27461974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4699297A Expired - Fee Related JP3841910B2 (ja) 1996-02-15 1997-02-14 半導体装置の作製方法

Country Status (1)

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JP (1) JP3841910B2 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010033202A (ko) 1997-12-17 2001-04-25 모리시타 요이찌 반도체박막의 제조방법과 그 제조장치 및 반도체소자와 그제조방법
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3156776B2 (ja) * 1998-08-03 2001-04-16 日本電気株式会社 レーザ照射方法
TW445545B (en) 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
JP4558748B2 (ja) * 1999-08-13 2010-10-06 株式会社半導体エネルギー研究所 半導体装置の作製方法及び表示装置の作製方法
TW473783B (en) 1999-08-13 2002-01-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US7679131B1 (en) 1999-08-31 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
KR20020031821A (ko) * 2000-10-24 2002-05-03 이형도 편향요크
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI272666B (en) 2002-01-28 2007-02-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
US20090124065A1 (en) 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
JP6983578B2 (ja) * 2017-08-25 2021-12-17 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2709376B2 (ja) * 1989-02-28 1998-02-04 株式会社 半導体エネルギー研究所 非単結晶半導体の作製方法
JPH0521868A (ja) * 1991-07-17 1993-01-29 Matsushita Electric Ind Co Ltd エキシマレーザ発振装置
JP3148295B2 (ja) * 1991-09-11 2001-03-19 三洋電機株式会社 薄膜多結晶シリコンの製造方法
JPH05152313A (ja) * 1991-12-02 1993-06-18 Matsushita Electric Ind Co Ltd エキシマレ−ザ−アニ−ル法及びエキシマレ−ザ−アニ−ル装置
JPH0626966A (ja) * 1992-07-08 1994-02-04 Ricoh Co Ltd 半導体薄膜の製造方法
JP3359670B2 (ja) * 1992-11-19 2002-12-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3165324B2 (ja) * 1994-04-13 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3054310B2 (ja) * 1994-03-09 2000-06-19 株式会社半導体エネルギー研究所 半導体デバイスのレーザー処理方法
JPH0851077A (ja) * 1994-05-30 1996-02-20 Sanyo Electric Co Ltd 多結晶半導体の製造方法及び画像表示デバイスの製造方法及び多結晶半導体の製造装置

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Publication number Publication date
JPH1064842A (ja) 1998-03-06

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